Follow
Zhongqiang Wang
Title
Cited by
Cited by
Year
Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor
ZQ Wang, HY Xu, XH Li, H Yu, YC Liu, XJ Zhu
Advanced Functional Materials 22 (13), 2759-2765, 2012
5632012
Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM
S Ambrogio, S Balatti, V Milo, R Carboni, ZQ Wang, A Calderoni, ...
IEEE Transactions on Electron Devices 63 (4), 1508-1515, 2016
1882016
Flexible resistive switching memory device based on amorphous InGaZnO film with excellent mechanical endurance
ZQ Wang, HY Xu, XH Li, XT Zhang, YX Liu, YC Liu
IEEE electron device letters 32 (10), 1442-1444, 2011
1162011
Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters
ZQ Wang, HY Xu, L Zhang, XH Li, JG Ma, XT Zhang, YC Liu
Nanoscale 5 (10), 4490-4494, 2013
1062013
True random number generation by variability of resistive switching in oxide-based devices
S Balatti, S Ambrogio, Z Wang, D Ielmini
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2 …, 2015
1022015
Memristors with organic‐inorganic halide perovskites
X Zhao, H Xu, Z Wang, Y Lin, Y Liu
InfoMat 1 (2), 183-210, 2019
962019
Biodegradable natural pectin‐based flexible multilevel resistive switching memory for transient electronics
J Xu, X Zhao, Z Wang, H Xu, J Hu, J Ma, Y Liu
Small 15 (4), 1803970, 2019
942019
Physical unbiased generation of random numbers with coupled resistive switching devices
S Balatti, S Ambrogio, R Carboni, V Milo, Z Wang, A Calderoni, ...
IEEE Transactions on Electron Devices 63 (5), 2029-2035, 2016
902016
Nonvolatile/volatile behaviors and quantized conductance observed in resistive switching memory based on amorphous carbon
X Zhao, H Xu, Z Wang, L Zhang, J Ma, Y Liu
Carbon 91, 38-44, 2015
872015
Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory
S Balatti, S Ambrogio, Z Wang, S Sills, A Calderoni, N Ramaswamy, ...
IEEE Transactions on Electron Devices 62 (10), 3365-3372, 2015
822015
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems
Z Wang, S Ambrogio, S Balatti, D Ielmini
Frontiers in neuroscience 8, 438, 2015
822015
Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices
Z Wang, T Zeng, Y Ren, Y Lin, H Xu, X Zhao, Y Liu, D Ielmini
Nature communications 11 (1), 1-10, 2020
712020
Interface state-induced negative differential resistance observed in hybrid perovskite resistive switching memory
H Ma, W Wang, H Xu, Z Wang, Y Tao, P Chen, W Liu, X Zhang, J Ma, ...
ACS applied materials & interfaces 10 (25), 21755-21763, 2018
532018
Stretchable and conformable synapse memristors for wearable and implantable electronics
M Yang, X Zhao, Q Tang, N Cui, Z Wang, Y Tong, Y Liu
Nanoscale 10 (38), 18135-18144, 2018
532018
Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors
X Zhao, Z Wang, Y Xie, H Xu, J Zhu, X Zhang, W Liu, G Yang, J Ma, Y Liu
Small 14 (29), 1801325, 2018
502018
Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS 2/Au structure for multilevel flexible memory
X Zhao, Z Fan, H Xu, Z Wang, J Xu, J Ma, Y Liu
Journal of Materials Chemistry C 6 (27), 7195-7200, 2018
502018
Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates
Y Lin, T Zeng, H Xu, Z Wang, X Zhao, W Liu, J Ma, Y Liu
Advanced Electronic Materials 4 (12), 1800373, 2018
442018
Transferable and flexible resistive switching memory devices based on PMMA films with embedded Fe3O4 nanoparticles
Y Lin, HY Xu, ZQ Wang, T Cong, WZ Liu, HL Ma, YC Liu
Applied Physics Letters 110 (19), 193503, 2017
432017
Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM)
S Balatti, S Ambrogio, ZQ Wang, S Sills, A Calderoni, N Ramaswamy, ...
2014 IEEE international electron devices meeting, 14.3. 1-14.3. 4, 2014
422014
Photoassisted electroforming method for reliable low‐power organic–inorganic perovskite memristors
X Zhao, Z Wang, W Li, S Sun, H Xu, P Zhou, J Xu, Y Lin, Y Liu
Advanced Functional Materials 30 (17), 1910151, 2020
402020
The system can't perform the operation now. Try again later.
Articles 1–20