| Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor ZQ Wang, HY Xu, XH Li, H Yu, YC Liu, XJ Zhu Advanced Functional Materials 22 (13), 2759-2765, 2012 | 714 | 2012 |
| Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM S Ambrogio, S Balatti, V Milo, R Carboni, ZQ Wang, A Calderoni, ... IEEE Transactions on Electron Devices 63 (4), 1508-1515, 2016 | 246 | 2016 |
| Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices Z Wang, T Zeng, Y Ren, Y Lin, H Xu, X Zhao, Y Liu, D Ielmini Nature communications 11 (1), 1510, 2020 | 163 | 2020 |
| Memristors with organic‐inorganic halide perovskites X Zhao, H Xu, Z Wang, Y Lin, Y Liu InfoMat 1 (2), 183-210, 2019 | 161 | 2019 |
| Flexible resistive switching memory device based on amorphous InGaZnO film with excellent mechanical endurance ZQ Wang, HY Xu, XH Li, XT Zhang, YX Liu, YC Liu IEEE electron device letters 32 (10), 1442-1444, 2011 | 138 | 2011 |
| Biodegradable natural pectin‐based flexible multilevel resistive switching memory for transient electronics J Xu, X Zhao, Z Wang, H Xu, J Hu, J Ma, Y Liu Small 15 (4), 1803970, 2019 | 133 | 2019 |
| True random number generation by variability of resistive switching in oxide-based devices S Balatti, S Ambrogio, Z Wang, D Ielmini IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2 …, 2015 | 131 | 2015 |
| Physical unbiased generation of random numbers with coupled resistive switching devices S Balatti, S Ambrogio, R Carboni, V Milo, Z Wang, A Calderoni, ... IEEE Transactions on Electron Devices 63 (5), 2029-2035, 2016 | 120 | 2016 |
| Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory S Balatti, S Ambrogio, Z Wang, S Sills, A Calderoni, N Ramaswamy, ... IEEE Transactions on Electron Devices 62 (10), 3365-3372, 2015 | 112 | 2015 |
| Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters ZQ Wang, HY Xu, L Zhang, XH Li, JG Ma, XT Zhang, YC Liu Nanoscale 5 (10), 4490-4494, 2013 | 112 | 2013 |
| A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems Z Wang, S Ambrogio, S Balatti, D Ielmini Frontiers in neuroscience 8, 123483, 2015 | 105 | 2015 |
| Nonvolatile/volatile behaviors and quantized conductance observed in resistive switching memory based on amorphous carbon X Zhao, H Xu, Z Wang, L Zhang, J Ma, Y Liu Carbon 91, 38-44, 2015 | 96 | 2015 |
| Plasmonic optoelectronic memristor enabling fully light‐modulated synaptic plasticity for neuromorphic vision X Shan, C Zhao, X Wang, Z Wang, S Fu, Y Lin, T Zeng, X Zhao, H Xu, ... Advanced Science 9 (6), 2104632, 2022 | 92 | 2022 |
| Stretchable and conformable synapse memristors for wearable and implantable electronics M Yang, X Zhao, Q Tang, N Cui, Z Wang, Y Tong, Y Liu Nanoscale 10 (38), 18135-18144, 2018 | 85 | 2018 |
| Interface state-induced negative differential resistance observed in hybrid perovskite resistive switching memory H Ma, W Wang, H Xu, Z Wang, Y Tao, P Chen, W Liu, X Zhang, J Ma, ... ACS applied materials & interfaces 10 (25), 21755-21763, 2018 | 77 | 2018 |
| Photoassisted electroforming method for reliable low‐power organic–inorganic perovskite memristors X Zhao, Z Wang, W Li, S Sun, H Xu, P Zhou, J Xu, Y Lin, Y Liu Advanced Functional Materials 30 (17), 1910151, 2020 | 75 | 2020 |
| Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates Y Lin, T Zeng, H Xu, Z Wang, X Zhao, W Liu, J Ma, Y Liu Advanced Electronic Materials 4 (12), 1800373, 2018 | 74 | 2018 |
| Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS 2/Au structure for multilevel flexible memory X Zhao, Z Fan, H Xu, Z Wang, J Xu, J Ma, Y Liu Journal of Materials Chemistry C 6 (27), 7195-7200, 2018 | 72 | 2018 |
| Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors X Zhao, Z Wang, Y Xie, H Xu, J Zhu, X Zhang, W Liu, G Yang, J Ma, Y Liu Small 14 (29), 1801325, 2018 | 69 | 2018 |
| Brain-inspired computing via memory device physics D Ielmini, Z Wang, Y Liu APL Materials 9 (5), 2021 | 67 | 2021 |
Daniele IelminiProfessor of ElectronicsVerified email at elet.polimi.it
