Hyungjin Kim
Hyungjin Kim
Associate Professor, Hanyang University
Verified email at - Homepage
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Analog synaptic behavior of a silicon nitride memristor
S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park
ACS applied materials & interfaces 9 (46), 40420-40427, 2017
4K-memristor analog-grade passive crossbar circuit
H Kim, MR Mahmoodi, H Nili, DB Strukov
Nature Communications 12, 5198, 2021
Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits
M Prezioso, MR Mahmoodi, FM Bayat, H Nili, H Kim, A Vincent, ...
Nature communications 9 (1), 5311, 2018
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ...
Nanoscale 11 (1), 237-245, 2019
Silicon-based floating-body synaptic transistor with frequency dependent short-and long-term memories
H Kim, J Park, MW Kwon, JH Lee, BG Park
IEEE Electron Device Letters 37 (3), 249-252, 2016
Silicon synaptic transistor for hardware-based spiking neural network and neuromorphic system
H Kim, S Hwang, J Park, BG Park
Nanotechnology 28 (40), 405202, 2017
Spiking neural network using synaptic transistors and neuron circuits for pattern recognition with noisy images
H Kim, S Hwang, J Park, S Yun, JH Lee, BG Park
IEEE Electron Device Letters 39 (4), 630-633, 2018
Architecture and process integration overview of 3D NAND flash technologies
GH Lee, S Hwang, J Yu, H Kim
Applied Sciences 11 (15), 6703, 2021
System-level simulation of hardware spiking neural network based on synaptic transistors and I&F neuron circuits
S Hwang, H Kim, J Park, MW Kwon, MH Baek, JJ Lee, BG Park
IEEE Electron Device Letters 39 (9), 1441-1444, 2018
Compact neuromorphic system with four-terminal Si-based synaptic devices for spiking neural networks
J Park, MW Kwon, H Kim, S Hwang, JJ Lee, BG Park
IEEE Transactions on Electron Devices 64 (5), 2438-2444, 2017
Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
TH Kim, H Nili, MH Kim, KK Min, BG Park, H Kim
Applied Physics Letters 117 (15), 2020
Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system
TH Kim, S Kim, K Hong, J Park, Y Hwang, BG Park, H Kim
Chaos, Solitons & Fractals 153, 111587, 2021
3-D floating-gate synapse array with spike-time-dependent plasticity
HS Choi, DH Wee, H Kim, S Kim, KC Ryoo, BG Park, Y Kim
IEEE Transactions on Electron Devices 65 (1), 101-107, 2017
Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM
S Kim, TH Kim, H Kim, BG Park
Applied Physics Letters 117 (20), 2020
AND flash array based on charge trap flash for implementation of convolutional neural networks
HS Choi, H Kim, JH Lee, BG Park, Y Kim
IEEE Electron Device Letters 41 (11), 1653-1656, 2020
Towards the development of analog neuromorphic chip prototype with 2.4 M integrated memristors
I Kataeva, S Ohtsuka, H Nili, H Kim, Y Isobe, K Yako, D Strukov
2019 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2019
4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array
S Kim, J Park, TH Kim, K Hong, Y Hwang, BG Park, H Kim
Advanced Intelligent Systems, 2100273, 2022
Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications
S Kim, H Kim, S Jung, MH Kim, SH Lee, S Cho, BG Park
Journal of Alloys and Compounds 663, 419-423, 2016
Bipolar and complementary resistive switching characteristics and neuromorphic system simulation in a Pt/ZnO/TiN synaptic device
SA Khan, GH Lee, C Mahata, M Ismail, H Kim, S Kim
Nanomaterials 11 (2), 315, 2021
3-bit multilevel operation with accurate programming scheme in tio x/al2o3 memristor crossbar array for quantized neuromorphic system
TH Kim, J Lee, S Kim, J Park, BG Park, H Kim
Nanotechnology 32 (29), 295201, 2021
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