| Shape engineering of InP nanostructures by selective area epitaxy N Wang, X Yuan, X Zhang, Q Gao, B Zhao, L Li, M Lockrey, HH Tan, ... ACS nano 13 (6), 7261-7269, 2019 | 48 | 2019 |
| Induced ferromagnetic order of graphdiyne semiconductors by introducing a heteroatom M Zhang, X Wang, H Sun, N Wang, J He, N Wang, Y Long, C Huang, Y Li ACS Central Science 6 (6), 950-958, 2020 | 38 | 2020 |
| Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with composition-varying AlGaN multilayer barriers YA Yin, N Wang, G Fan, Y Zhang Superlattices and Microstructures 76, 149-155, 2014 | 32 | 2014 |
| Graphdiyne Visible‐Light Photodetector with Ultrafast Detectivity Y Li, M Zhang, X Hu, X Li, R Li, L Yu, X Fan, N Wang, C Huang, Y Li Advanced Optical Materials 9, 2001916, 2021 | 27 | 2021 |
| Graphdiyne Ink for Ionic Liquid Gated Printed Transistor M Zhang, Y Li, X Li, N Wang, C Huang Advanced Electronic Materials, 2000157, 2020 | 26 | 2020 |
| Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes S Wang, YA Yin, H Gu, N Wang, L Liu Journal of Display Technology 12 (10), 1112-1116, 2016 | 26 | 2016 |
| A new strategy for selective area growth of highly uniform InGaAs/InP multiple quantum well nanowire arrays for optoelectronic device applications F Zhang, X Zhang, Z Li, R Yi, Z Li, N Wang, X Xu, Z Azimi, L Li, ... Advanced Functional Materials 32 (3), 2103057, 2022 | 24 | 2022 |
| Ultralow Threshold, Single-Mode InGaAs/GaAs Multi-Quantum Disk Nanowire Lasers X Zhang, R Yi, N Gagrani, Z Li, F Zhang, X Gan, X Yao, X Yuan, N Wang, ... ACS Nano, 2021 | 21 | 2021 |
| Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires X Yuan, L Li, Z Li, F Wang, N Wang, L Fu, J He, HH Tan, C Jagadish Nanoscale 11 (18), 9207-9215, 2019 | 19 | 2019 |
| Self-frequency-conversion nanowire lasers R Yi, X Zhang, C Li, B Zhao, J Wang, Z Li, X Gan, L Li, Z Li, F Zhang, ... Light: Science & Applications 11 (1), 120, 2022 | 18 | 2022 |
| Epitaxially-grown InP micro-ring lasers WW Wong, Z Su, N Wang, C Jagadish, HH Tan Nano Letters, 2021 | 16 | 2021 |
| Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer YA Yin, N Wang, S Li, Y Zhang, G Fan Applied Physics A 119, 41-44, 2015 | 15 | 2015 |
| The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods B Zhao, MN Lockrey, P Caroff, N Wang, L Li, J Wong-Leung, HH Tan, ... Nanoscale 10 (23), 11205-11210, 2018 | 12 | 2018 |
| 2D carrier localization at the wurtzite-zincblende interface in novel layered InP nanomembranes Z Su, N Wang, H Tan, C Jagadish ACS Photonics, 2021 | 11 | 2021 |
| Understanding shape evolution and phase transition in InP nanostructures grown by selective area epitaxy N Wang, WW Wong, X Yuan, L Li, C Jagadish, HH Tan Small 17 (21), 2100263, 2021 | 9 | 2021 |
| Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays X Yuan, N Wang, Z Tian, F Zhang, L Li, M Lockrey, J He, C Jagadish, ... Nanoscale horizons 5 (11), 1530-1537, 2020 | 9 | 2020 |
| Performance analysis of GaN-based light-emitting diodes with lattice-matched InGaN/AlInN/InGaN quantum-well barriers N Wang, YA Yin, B Zhao, T Mei Journal of Display Technology 11 (12), 1056-1060, 2015 | 9 | 2015 |
| Advantages of GaN-based light-emitting diodes with polarization-reduced chirped multiquantum barrier YA Yin, N Wang, G Fan, S Li IEEE Transactions on Electron Devices 61 (8), 2849-2853, 2014 | 9 | 2014 |
| Highly regular rosette-shaped cathodoluminescence in GaN self-assembled nanodisks and nanorods B Zhao, MN Lockrey, N Wang, P Caroff, X Yuan, L Li, J Wong-Leung, ... Nano Research 13, 2500-2505, 2020 | 7 | 2020 |
| Vertical emitting nanowire vector beam lasers X Zhang, R Yi, B Zhao, C Li, L Li, Z Li, F Zhang, N Wang, M Zhang, L Fang, ... ACS nano 17 (11), 10918-10924, 2023 | 6 | 2023 |
