Jan Gluschke
Jan Gluschke
Verified email at nanoelectronics.physics.unsw.edu.au
Cited by
Cited by
Large thermoelectric power factor enhancement observed in InAs nanowires
PM Wu, J Gooth, X Zianni, SF Svensson, JG Gluschke, KA Dick, ...
Nano letters 13 (9), 4080-4086, 2013
Thermoelectric performance of classical topological insulator nanowires
J Gooth, JG Gluschke, R Zierold, M Leijnse, H Linke, K Nielsch
Semiconductor Science and Technology 30 (1), 015015, 2014
InAs nanowire transistors with multiple, independent wrap-gate segments
AM Burke, DJ Carrad, JG Gluschke, K Storm, S Fahlvik Svensson, H Linke, ...
Nano letters 15 (5), 2836-2843, 2015
Gate voltage induced phase transition in magnetite nanowires
J Gooth, R Zierold, JG Gluschke, T Boehnert, S Edinger, S Barth, ...
Applied Physics Letters 102 (7), 073112, 2013
Regaining a spatial dimension: mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
J Seidl, JG Gluschke, X Yuan, S Naureen, N Shahid, HH Tan, C Jagadish, ...
Nano letters 19 (7), 4666-4677, 2019
Characterization of Ambipolar GaSb/InAs Core–Shell Nanowires by Thermovoltage Measurements
JG Gluschke, M Leijnse, B Ganjipour, KA Dick, H Linke, C Thelander
Acs Nano 9 (7), 7033-7040, 2015
Towards low-dimensional hole systems in Be-doped GaAs nanowires
AR Ullah, JG Gluschke, P Krogstrup, CB Sørensen, J Nygård, AP Micolich
Nanotechnology 28 (13), 134005, 2017
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
JG Gluschke, J Seidl, AM Burke, RW Lyttleton, DJ Carrad, AR Ullah, ...
Nanotechnology 30 (6), 064001, 2018
Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studies
JG Gluschke, SF Svensson, C Thelander, H Linke
Nanotechnology 25 (38), 385704, 2014
Using ultrathin parylene films as an organic gate insulator in nanowire field-effect transistors
JG Gluschke, J Seidl, RW Lyttleton, DJ Carrad, JW Cochrane, S Lehmann, ...
Nano letters 18 (7), 4431-4439, 2018
P-GaAs nanowire metal–semiconductor field-effect transistors with near-thermal limit gating
AR Ullah, F Meyer, JG Gluschke, S Naureen, P Caroff, P Krogstrup, ...
Nano letters 18 (9), 5673-5680, 2018
A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications
JG Gluschke, F Richter, AP Micolich
Review of Scientific Instruments 90 (8), 083901, 2019
Magnetotransport and thermopower of single Bi0.92Sb0.08 nanowires
S Heiderich, W Toellner, T Boehnert, JG Gluschke, S Zastrow, ...
physica status solidi (RRL)–Rapid Research Letters 7 (10), 898-902, 2013
Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion
JG Gluschke, J Seidl, RW Lyttleton, K Nguyen, M Lagier, F Meyer, ...
Materials Horizons 8 (1), 224-233, 2021
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
JG Gluschke, J Seidl, HH Tan, C Jagadish, P Caroff, AP Micolich
Nanoscale 12 (39), 20317-20325, 2020
Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors
S Yin, JG Gluschke, AP Micolich, J Nathawat, B Barut, R Dixit, ...
ACS Applied Electronic Materials 1 (11), 2260-2267, 2019
Kinetics of the charge ordering in magnetite below the Verwey temperature
J Gooth, T Böhnert, JG Gluschke, B Hamdou, S Barth, D Görlitz, R Zierold, ...
Journal of Physics: Condensed Matter 26 (47), 472202, 2014
Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins
J Seidl, JG Gluschke, X Yuan, HH Tan, C Jagadish, P Caroff, AP Micolich
ACS nano 15 (4), 7226-7236, 2021
Kontaktierung und thermoelektrische Charakterisierung von Bi-und Bi2Te3-Nanostäbchen
JG Gluschke
Hamburg. Univ., 2011
Integrated Proton-gated Bioelectronic Circuits using Nanowires and Nanoscale Patterned Ion-gating Elements
JG Gluschke, J Seidl, RW Lyttleton, K Nguyen, M Lagier, F Meyer, ...
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