Sven Rogge
TitleCited byYear
Silicon quantum electronics
FA Zwanenburg, AS Dzurak, A Morello, MY Simmons, LCL Hollenberg, ...
Reviews of modern physics 85 (3), 961, 2013
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
GP Lansbergen, R Rahman, CJ Wellard, I Woo, J Caro, N Collaert, ...
Nature Physics 4 (8), 656, 2008
Metal–organic and covalent organic frameworks as single-site catalysts
SMJ Rogge, A Bavykina, J Hajek, H Garcia, AI Olivos-Suarez, ...
Chemical Society Reviews 46 (11), 3134-3184, 2017
Transport spectroscopy of a single dopant in a gated silicon nanowire
H Sellier, GP Lansbergen, J Caro, S Rogge, N Collaert, I Ferain, ...
Physical review letters 97 (20), 206805, 2006
Scaling of nano-Schottky-diodes
GDJ Smit, S Rogge, TM Klapwijk
Applied Physics Letters 81 (20), 3852-3854, 2002
Enhanced tunneling across nanometer-scale metal–semiconductor interfaces
GDJ Smit, S Rogge, TM Klapwijk
Applied Physics Letters 80 (14), 2568-2570, 2002
A surface code quantum computer in silicon
CD Hill, E Peretz, SJ Hile, MG House, M Fuechsle, S Rogge, ...
Science advances 1 (9), e1500707, 2015
Ambipolar Cu-and Fe-phthalocyanine single-crystal field-effect transistors
RWI De Boer, AF Stassen, MF Craciun, CL Mulder, A Molinari, S Rogge, ...
Applied Physics Letters 86 (26), 262109, 2005
Optical addressing of an individual erbium ion in silicon
C Yin, M Rancic, GG de Boo, N Stavrias, JC McCallum, MJ Sellars, ...
Nature 497 (7447), 91, 2013
Electronic Transport through Electron‐Doped Metal Phthalocyanine Materials
MF Craciun, S Rogge, MJL den Boer, S Margadonna, K Prassides, ...
Advanced Materials 18 (3), 320-324, 2006
Competing periodicities in fractionally filled one-dimensional bands
PC Snijders, S Rogge, HH Weitering
Physical review letters 96 (7), 076801, 2006
Orbital Stark effect and quantum confinement transition of donors in silicon
R Rahman, GP Lansbergen, SH Park, J Verduijn, G Klimeck, S Rogge, ...
Physical Review B 80 (16), 165314, 2009
Low temperature ac dielectric response of glasses to high dc electric fields
DJ Salvino, S Rogge, B Tigner, DD Osheroff
Physical review letters 73 (2), 268, 1994
Correlation between Molecular Orbitals and Doping Dependence of the Electrical Conductivity in Electron-Doped Metal− Phthalocyanine Compounds
MF Craciun, S Rogge, AF Morpurgo
Journal of the American Chemical Society 127 (35), 12210-12211, 2005
Evidence for the importance of interactions between active defects in glasses
S Rogge, D Natelson, DD Osheroff
Physical review letters 76 (17), 3136, 1996
Spatially resolving valley quantum interference of a donor in silicon
J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ...
Nature materials 13 (6), 605, 2014
An accurate single-electron pump based on a highly tunable silicon quantum dot
A Rossi, T Tanttu, KY Tan, I Iisakka, R Zhao, KW Chan, GC Tettamanzi, ...
Nano letters 14 (6), 3405-3411, 2014
Few electron limit of n-type metal oxide semiconductor single electron transistors
E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ...
Nanotechnology 23 (21), 215204, 2012
Magnetic-field probing of an SU (4) Kondo resonance in a single-atom transistor
GC Tettamanzi, J Verduijn, GP Lansbergen, M Blaauboer, MJ Calderón, ...
Physical review letters 108 (4), 046803, 2012
Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors
R Rahman, SH Park, TB Boykin, G Klimeck, S Rogge, LCL Hollenberg
Physical Review B 80 (15), 155301, 2009
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