| The transport and optical sensing properties of MoS2, MoSe2, WS2 and WSe2 semiconducting transition metal dichalcogenides M Nayeri, M Moradinasab, M Fathipour Semiconductor Science and Technology 33 (2), 025002, 2018 | 67 | 2018 |
| Moving vehicle detection using AdaBoost and haar-like feature in surveillance videos MM Moghimi, M Nayeri, M Pourahmadi, MK Moghimi arXiv preprint arXiv:1801.01698, 2018 | 31 | 2018 |
| Approach for MVL design based on armchair graphene nanoribbon field effect transistor and arithmetic circuits design M Nayeri, P Keshavarzian, M Nayeri Microelectronics Journal 92, 104599, 2019 | 30 | 2019 |
| Methane adsorption on the surface of metal (Fe, Ni, Pd) decorated SWCNT: A density functional theory (DFT) study FK Fotooh, M Nayeri Surface Science 713, 121913, 2021 | 14 | 2021 |
| A Novel Design of Quaternary Inverter Gate Based on GNRFET M Nayeri, P Keshavarzian International Journal of Nanoscience and Nanotechnology 15 (3), 211-217, 2019 | 13 | 2019 |
| The effect of uniaxial strain on the optical properties of monolayer molybdenum disulfide M Nayeri, M Fathipour, AY Goharrizi Journal of Physics D: Applied Physics 49 (45), 455103, 2016 | 13 | 2016 |
| A Numerical Analysis of Electronic and Optical Properties of the Zigzag MoS2 Nanoribbon Under Uniaxial Strain M Nayeri, M Fathipour IEEE Transactions on Electron Devices 65 (5), 1988-1994, 2018 | 12 | 2018 |
| High-speed ternary half adder based on GNRFET M Nayeri, P Keshavarzian, M Nayeri Journal of Nanoanalysis 6 (3), 193-198, 2019 | 10 | 2019 |
| A Novel Design of Penternary Inverter Gate Based on Carbon Nano Tube M Nayeri, P Keshavarzian, M Nayeri Journal of Optoelectronical Nanostructures 3 (1), 15-26, 2018 | 10 | 2018 |
| Behavior of the dielectric function of monolayer under Uniaxial Strain M Nayeri, M Fathipour, A Yazdanpanah Goharrizi Journal of Computational Electronics 15 (4), 1388-1392, 2016 | 10 | 2016 |
| The influence of intrinsic atomic defects on the electronic and optical properties of the single layer AlN M Nayeri, P Akherati Physica Scripta 95 (7), 075106, 2020 | 9 | 2020 |
| A novel design of a multi-layer 2: 4 decoder using quantum-dot cellular automata R Pourtajabadi, M Nayeri journal of optoelectronical nanostructures 4 (1), 39-50, 2019 | 9 | 2019 |
| A sub-threshold 10T FinFET SRAM cell design for low-power applications A Dolatshah, E Abbasian, M Nayeri, S Sofimowloodi AEU-International Journal of Electronics and Communications 157, 154417, 2022 | 8 | 2022 |
| An active CMOS optical receiver employing an inductor-less, low-noise and high-gain regulated cascode transimpedance amplifier S Sadeghi, M Nayeri, M Dolatshahi, A Moftakharzadeh Microelectronics Journal 110, 105015, 2021 | 8 | 2021 |
| High-speed penternary inverter gate using GNRFET M Nayeri, P Keshavarzian, M Nayeri Journal of Advances in Computer Research 10 (2), 53-59, 2019 | 8 | 2019 |
| Simulation-based recommendations for digital circuits design using schottky-barrier-type GNRFET E Abbasian, M Nayeri ECS Journal of Solid State Science and Technology 11 (7), 071001, 2022 | 7 | 2022 |
| Engineering of electronic and optical properties of monolayer gallium sulfide/selenide in presence of intrinsic atomic defects RH Almadvari, M Nayeri, S Fotoohi Materials Research Express 7 (1), 015915, 2020 | 6 | 2020 |
| Analytical study of the electronic and optical properties of the armchair MoS2 nanoribbons M Nayeri, M Fathipour Physica B: Condensed Matter 594, 412337, 2020 | 4 | 2020 |
| Local impact of Stone-Wales defect on a bilayer graphene nanoribbon FET H Owlia, M Nayeri ECS Journal of Solid State Science and Technology 10 (3), 031007, 2021 | 3 | 2021 |
| A Novel impact Ionization MOS (I-MOS) structure using a silicon-germanium/silicon heterostructure channel H Nematian, M Fathipour, M Nayeri 2008 International Conference on Microelectronics, 228-231, 2008 | 3 | 2008 |
Morteza FathipourUniversity of TehranVerified email at ut.ac.ir
