Junghwan Kim
Junghwan Kim
Verified email at mces.titech.ac.jp
Cited by
Cited by
Lead‐Free Highly Efficient Blue‐Emitting Cs3Cu2I5 with 0D Electronic Structure
T Jun, K Sim, S Iimura, M Sasase, H Kamioka, J Kim, H Hosono
Advanced Materials 30 (43), 1804547, 2018
Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs
H Hosono, J Kim, Y Toda, T Kamiya, S Watanabe
Proceedings of the National Academy of Sciences 114 (2), 233-238, 2017
Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor
Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, Naoto Watanabe, Koji Kimoto ...
NPG Asia Materials, e359, 2017
Material Design of p‐Type Transparent Amorphous Semiconductor, Cu–Sn–I
T Jun, J Kim, M Sasase, H Hosono
Advanced Materials 30 (12), 1706573, 2018
Exploration of stable strontium phosphide-based electrides: theoretical structure prediction and experimental validation
J Wang, K Hanzawa, H Hiramatsu, J Kim, N Umezawa, K Iwanaka, T Tada, ...
Journal of the American Chemical Society 139 (44), 15668-15680, 2017
Chemical design and example of transparent bipolar semiconductors
T Arai, S Iimura, J Kim, Y Toda, S Ueda, H Hosono
Journal of the American Chemical Society 139 (47), 17175-17180, 2017
Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors
J Kim, J Bang, N Nakamura, H Hosono
APL Materials 7 (2), 022501, 2019
Performance boosting strategy for perovskite light-emitting diodes
K Sim, T Jun, J Bang, H Kamioka, J Kim, H Hiramatsu, H Hosono
Applied Physics Reviews 6 (3), 031402, 2019
Efficient charge generation layer for tandem OLEDs: Bi-layered MoO3/ZnO-based oxide semiconductor
Hongsheng Yang, Junghwan Kim, Koji Yamamoto, Hideo Hosono
Organic Electronics, 133-138, 2017
Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O
J Kim, N Miyokawa, T Sekiya, K Ide, Y Toda, H Hiramatsu, H Hosono, ...
Thin Solid Films 614, 84-89, 2016
Fabrication and characterization of ZnS:(Cu, Al) thin film phosphors on glass substrates by pulsed laser deposition
J Kim, H Hiramatsu, H Hosono, T Kamiya
Thin Solid Films 559, 18-22, 2014
Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor
J Kim, N Miyokawa, K Ide, Y Toda, H Hiramatsu, H Hosono, T Kamiya
AIP Advances 6 (1), 015106, 2016
Identifying quasi-2D and 1D electrides in yttrium and scandium chlorides via geometrical identification
B Wan, Y Lu, Z Xiao, Y Muraba, J Kim, D Huang, L Wu, H Gou, J Zhang, ...
npj Computational Materials 4 (1), 1-9, 2018
69‐4: NBIS‐Stable Oxide Thin‐Film Transistors Using Ultra‐Wide Bandgap Amorphous Oxide Semiconductors
J Kim, N Nakamura, T Kamiya, H Hosono
SID Symposium Digest of Technical Papers 47 (1), 951-953, 2016
Effects of sulfur substitution in amorphous InGaZnO4: optical properties and first-principles calculations
J Kim, H Hiramatsu, H Hosono, T Kamiya
Journal of the Ceramic Society of Japan 123 (1439), 537-541, 2015
ZnO thin-film transistor grown by rf sputtering using carbon dioxide and substrate bias modulation
J Kim, J Meng, D Lee, M Yu, D Yoo, DW Kang, J Jo
Journal of nanomaterials 2014, 2014
Material Design of Transparent Oxide Semiconductors for Organic Electronics: Why Do Zinc Silicate Thin Films Have Exceptional Properties?
N Nakamura, J Kim, H Hosono
Advanced Electronic Materials 4 (2), 1700352, 2018
One-step solution synthesis of white-light-emitting films via dimensionality control of the Cs–Cu–I system
T Jun, T Handa, K Sim, S Iimura, M Sasase, J Kim, Y Kanemitsu, ...
APL Materials 7 (11), 111113, 2019
Zeolitic Intermetallics: LnNiSi (Ln= La–Nd)
H Mizoguchi, SW Park, K Kishida, M Kitano, J Kim, M Sasase, T Honda, ...
Journal of the American Chemical Society 141 (8), 3376-3379, 2019
Organic light-emitting diode lighting with high out-coupling and reliability: Application of transparent amorphous ZnO–SiO2 semiconductor thick film
N Nakamura, J Kim, K Yamamoto, S Watanabe, H Hosono
Organic Electronics 51, 103-110, 2017
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