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Roberto S. Murphy Arteaga
Roberto S. Murphy Arteaga
INAOE
Verified email at ieee.org
Title
Cited by
Cited by
Year
Analytical model and parameter extraction to account for the pad parasitics in RF-CMOS
R Torres-Torres, R Murphy-Arteaga, JA Reynoso-Hernández
IEEE Transactions on Electron Devices 52 (7), 1335-1342, 2005
962005
MOSFET bias dependent series resistance extraction from RF measurements
R Torres-Torres, RS Murphy-Arteaga, S Decoutere
Electronics Letters 39 (20), 1476-1478, 2003
562003
A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters
A Ortiz-Conde, A Sucre-González, F Zárate-Rincón, R Torres-Torres, ...
Microelectronics Reliability 69, 1-16, 2017
492017
On the origin of light emission in silicon rich oxide obtained by low-pressure chemical vapor deposition
M Aceves-Mijares, AA González-Fernández, R López-Estopier, ...
Journal of Nanomaterials 2012, 5-5, 2012
382012
MOSFET gate resistance determination
R Torres-Torres, RS Murphy-Arteaga, S Decoutere
Electronics Letters 39 (2), 1, 2003
272003
RF low-noise amplifiers in BiCMOS technologies
F Carreto-Castro, J Silva-Martinez, R Murphy-Arteaga
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal …, 1999
271999
Straightforward determination of small-signal model parameters for bulk RF-MOSFETs
R Torres-Torres, R Murphy-Arteaga
Proceedings of the Fifth IEEE International Caracas Conference on Devices …, 2004
262004
Miniature patch and slot microstrip arrays for IoT and ISM band applications
KN Olan-Nuñez, RS Murphy-Arteaga, E Colín-Beltrán
IEEE Access 8, 102846-102854, 2020
252020
A DC method to extract mobility degradation and series resistance of multifinger microwave MOSFETs
A Sucre-González, F Zárate-Rincón, A Ortiz-Conde, R Torres-Torres, ...
IEEE Transactions on Electron Devices 63 (5), 1821-1826, 2016
212016
Electrical characterization of n-type a-SiGe: H/p-type crystalline-silicon heterojunctions
P Rosales-Quintero, A Torres-Jacome, R Murphy-Arteaga, ...
Semiconductor science and technology 19 (3), 366, 2003
212003
Impact of technology scaling on the input and output features of RF-MOSFETs: effects and modeling
R Torres-Torres, R Murphy-Arteaga, E Augendre, S Decoutere
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
172003
A novel metamaterial-based antenna for on-chip applications for the 72.5–81 GHz frequency range
KN Olan-Nuñez, RS Murphy-Arteaga
Scientific Reports 12 (1), 1699, 2022
162022
Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
G Álvarez-Botero, R Torres-Torres, R Murphy-Arteaga
Microelectronics Reliability 51 (2), 342-349, 2011
162011
Characterization of Hot-Carrier-Induced RF-MOSFET Degradation at Different Bulk Biasing Conditions From -Parameters
F Zárate-Rincón, D Garcia-Garcia, VH Vega-Gonzalez, R Torres-Torres, ...
IEEE Transactions on Microwave Theory and Techniques 64 (1), 125-132, 2015
142015
Modeling the impact of multi-fingering microwave MOSFETs on the source and drain resistances
F Zárate-Rincón, RS Murphy-Arteaga, R Torres-Torres, A Ortiz-Conde, ...
IEEE Transactions on Microwave Theory and Techniques 62 (12), 3255-3261, 2014
142014
A new analytical method to calculate the characteristic impedance ZC of uniform transmission lines
JE Zúñiga-Juárez, JA Reynoso-Hernández, MC Maya-Sánchez, ...
Computación y Sistemas 16 (3), 277-285, 2012
142012
Fabrication, characterisation and modelling of integrated on-silicon inductors
R Murphy-Arteaga, J Huerta-Chua, A Dı́az-Sánchez, A Torres-Jácome, ...
Microelectronics Reliability 43 (2), 195-201, 2003
142003
Conductance-to-current-ratio-based parameter extraction in MOS leakage current models
A Ortiz-Conde, A Sucre-González, R Torres-Torres, J Molina, ...
IEEE Transactions on Electron Devices 63 (10), 3844-3850, 2016
132016
Characterization of RF-MOSFETs in common-source configuration at different source-to-bulk voltages from S-Parameters
F Zárate-Rincón, GA Álvarez-Botero, R Torres-Torres, ...
IEEE transactions on electron devices 60 (8), 2450-2456, 2013
132013
Modeling Transmission Lines on Silicon in the Frequency and Time Domains from -Parameters
SC Sejas-Garcia, R Torres-Torres, RS Murphy-Arteaga
IEEE transactions on electron devices 59 (6), 1803-1806, 2012
122012
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Articles 1–20