| Method for growing a monocrystalline tin-containing semiconductor material B Vincent, F Gencarelli, R Loo, M Caymax | 421 | 2019 |
| Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition B Vincent, F Gencarelli, H Bender, C Merckling, B Douhard, DH Petersen, ... Applied Physics Letters 99 (15), 2011 | 250 | 2011 |
| GeSn/Ge heterostructure short-wave infrared photodetectors on silicon A Gassenq, F Gencarelli, J Van Campenhout, Y Shimura, R Loo, G Narcy, ... Optics express 20 (25), 27297-27303, 2012 | 213 | 2012 |
| Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ... Microelectronic Engineering 88 (4), 342-346, 2011 | 156 | 2011 |
| Crystalline properties and strain relaxation mechanism of CVD grown GeSn F Gencarelli, B Vincent, J Demeulemeester, A Vantomme, A Moussa, ... ECS Journal of Solid State Science and Technology 2 (4), P134, 2013 | 155 | 2013 |
| The Complementary FET (CFET) for CMOS scaling beyond N3 J Ryckaert, P Schuddinck, P Weckx, G Bouche, B Vincent, J Smith, ... 2018 IEEE Symposium on Vlsi Technology, 141-142, 2018 | 143 | 2018 |
| Silicon-based photonic integration beyond the telecommunication wavelength range G Roelkens, UD Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014 | 142 | 2014 |
| Low-temperature Ge and GeSn chemical vapor deposition using Ge2H6 F Gencarelli, B Vincent, L Souriau, O Richard, W Vandervorst, R Loo, ... Thin Solid Films 520 (8), 3211-3215, 2012 | 122 | 2012 |
| Challenges and opportunities in advanced Ge pMOSFETs E Simoen, J Mitard, G Hellings, G Eneman, B De Jaeger, L Witters, ... Materials Science in Semiconductor Processing 15 (6), 588-600, 2012 | 94 | 2012 |
| Silicon-based heterogeneous photonic integrated circuits for the mid-infrared G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... Optical Materials Express 3 (9), 1523-1536, 2013 | 85 | 2013 |
| Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ... 2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011 | 82 | 2011 |
| High quality Germanium-On-Insulator wafers with excellent hole mobility QT Nguyen, JF Damlencourt, B Vincent, L Clavelier, Y Morand, P Gentil, ... Solid-State Electronics 51 (9), 1172-1179, 2007 | 79 | 2007 |
| FinFET device with dual-strained channels and method for manufacturing thereof G Eneman, B Vincent, VY Thean US Patent 9,171,904, 2015 | 68 | 2015 |
| FinFET device with dual-strained channels and method for manufacturing thereof G Eneman, B Vincent, VY Thean US Patent 9,171,904, 2015 | 60 | 2015 |
| Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation K Martens, R Rooyackers, A Firrincieli, B Vincent, R Loo, B De Jaeger, ... Applied Physics Letters 98 (1), 2011 | 58 | 2011 |
| Fabrication of SiGe-on-insulator substrates by a condensation technique: An experimental and modelling study B Vincent, JF Damlencourt, P Rivallin, E Nolot, C Licitra, Y Morand, ... Semiconductor science and technology 22 (3), 237, 2007 | 57 | 2007 |
| Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique B Vincent, JF Damlencourt, V Delaye, R Gassilloud, L Clavelier, Y Morand Applied physics letters 90 (7), 2007 | 56 | 2007 |
| Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method S Gupta, B Vincent, B Yang, D Lin, F Gencarelli, JYJ Lin, R Chen, ... 2012 International Electron Devices Meeting, 16.2. 1-16.2. 4, 2012 | 51 | 2012 |
| Stress simulations for optimal mobility group IV p-and nMOS FinFETs for the 14 nm node and beyond G Eneman, DP Brunco, L Witters, B Vincent, P Favia, A Hikavyy, ... 2012 International Electron Devices Meeting, 6.5. 1-6.5. 4, 2012 | 48 | 2012 |
| Ge1− xSnx stressors for strained-Ge CMOS S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ... Solid-State Electronics 60 (1), 53-57, 2011 | 46 | 2011 |
