Karsten Bothe
Karsten Bothe
Group Leader Solar Cell Characterisation and simulation, Institut für Solarenergieforschung
Verified email at isfh.de
Title
Cited by
Cited by
Year
Structure and transformation of the metastable boron-and oxygen-related defect center in crystalline silicon
J Schmidt, K Bothe
Physical review B 69 (2), 024107, 2004
4522004
Electronically activated boron-oxygen-related recombination centers in crystalline silicon
K Bothe, J Schmidt
Journal of Applied Physics 99 (1), 013701, 2006
3572006
Fundamental boron–oxygen‐related carrier lifetime limit in mono‐and multicrystalline silicon
K Bothe, R Sinton, J Schmidt
Progress in photovoltaics: Research and Applications 13 (4), 287-296, 2005
3312005
Series resistance imaging of solar cells by voltage dependent electroluminescence
D Hinken, K Ramspeck, K Bothe, B Fischer, R Brendel
Applied Physics Letters 91 (18), 182104, 2007
1922007
Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon
C Schinke, P Christian Peest, J Schmidt, R Brendel, K Bothe, MR Vogt, ...
AIP Advances 5 (6), 067168, 2015
1712015
Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography
K Ramspeck, K Bothe, D Hinken, B Fischer, J Schmidt, R Brendel
Applied Physics Letters 90 (15), 153502, 2007
1552007
Understanding junction breakdown in multicrystalline solar cells
O Breitenstein, J Bauer, K Bothe, W Kwapil, D Lausch, U Rau, J Schmidt, ...
Journal of Applied Physics 109 (7), 5, 2011
1332011
19.4%‐efficient large‐area fully screen‐printed silicon solar cells
S Gatz, H Hannebauer, R Hesse, F Werner, A Schmidt, T Dullweber, ...
physica status solidi (RRL)–Rapid Research Letters 5 (4), 147-149, 2011
1322011
Photoconductance‐calibrated photoluminescence lifetime imaging of crystalline silicon
S Herlufsen, J Schmidt, D Hinken, K Bothe, R Brendel
physica status solidi (RRL)–Rapid Research Letters 2 (6), 245-247, 2008
1272008
Impurity-related limitations of next-generation industrial silicon solar cells
J Schmidt, B Lim, D Walter, K Bothe, S Gatz, T Dullweber, PP Altermatt
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-5, 2012
1102012
Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
JD Murphy, K Bothe, R Krain, VV Voronkov, RJ Falster
Journal of Applied Physics 111 (11), 113709, 2012
972012
Dynamic carrier lifetime imaging of silicon wafers using an infrared-camera-based approach
K Ramspeck, S Reißenweber, J Schmidt, K Bothe, R Brendel
Applied Physics Letters 93 (10), 102104, 2008
922008
Generation and annihilation of boron–oxygen-related recombination centers in compensated - and -type silicon
B Lim, F Rougieux, D Macdonald, K Bothe, J Schmidt
Journal of Applied Physics 108 (10), 103722, 2010
872010
Luminescence emission from forward-and reverse-biased multicrystalline silicon solar cells
K Bothe, K Ramspeck, D Hinken, C Schinke, J Schmidt, S Herlufsen, ...
Journal of Applied Physics 106 (10), 104510, 2009
852009
Detection of the voltage distribution in photovoltaic modules by electroluminescence imaging
T Potthoff, K Bothe, U Eitner, D Hinken, M Köntges
Progress in Photovoltaics: Research and Applications 18 (2), 100-106, 2010
782010
Recombination-enhanced formation of the metastable boron–oxygen complex in crystalline silicon
K Bothe, R Hezel, J Schmidt
Applied physics letters 83 (6), 1125-1127, 2003
782003
Kinetics of the electronically stimulated formation of a boron-oxygen complex in crystalline silicon
DW Palmer, K Bothe, J Schmidt
Physical Review B 76 (3), 035210, 2007
762007
Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
JD Murphy, RE McGuire, K Bothe, VV Voronkov, RJ Falster
Solar energy materials and solar cells 120, 402-411, 2014
752014
Can luminescence imaging replace lock-in thermography on solar cells?
O Breitenstein, J Bauer, K Bothe, D Hinken, J Müller, W Kwapil, ...
IEEE Journal of Photovoltaics 1 (2), 159-167, 2011
752011
Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature
B Lim, K Bothe, J Schmidt
physica status solidi (RRL)–Rapid Research Letters 2 (3), 93-95, 2008
742008
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