| Structure and transformation of the metastable boron-and oxygen-related defect center in crystalline silicon J Schmidt, K Bothe Physical review B 69 (2), 024107, 2004 | 452 | 2004 |
| Electronically activated boron-oxygen-related recombination centers in crystalline silicon K Bothe, J Schmidt Journal of Applied Physics 99 (1), 013701, 2006 | 357 | 2006 |
| Fundamental boron–oxygen‐related carrier lifetime limit in mono‐and multicrystalline silicon K Bothe, R Sinton, J Schmidt Progress in photovoltaics: Research and Applications 13 (4), 287-296, 2005 | 331 | 2005 |
| Series resistance imaging of solar cells by voltage dependent electroluminescence D Hinken, K Ramspeck, K Bothe, B Fischer, R Brendel Applied Physics Letters 91 (18), 182104, 2007 | 192 | 2007 |
| Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon C Schinke, P Christian Peest, J Schmidt, R Brendel, K Bothe, MR Vogt, ... AIP Advances 5 (6), 067168, 2015 | 171 | 2015 |
| Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography K Ramspeck, K Bothe, D Hinken, B Fischer, J Schmidt, R Brendel Applied Physics Letters 90 (15), 153502, 2007 | 155 | 2007 |
| Understanding junction breakdown in multicrystalline solar cells O Breitenstein, J Bauer, K Bothe, W Kwapil, D Lausch, U Rau, J Schmidt, ... Journal of Applied Physics 109 (7), 5, 2011 | 133 | 2011 |
| 19.4%‐efficient large‐area fully screen‐printed silicon solar cells S Gatz, H Hannebauer, R Hesse, F Werner, A Schmidt, T Dullweber, ... physica status solidi (RRL)–Rapid Research Letters 5 (4), 147-149, 2011 | 132 | 2011 |
| Photoconductance‐calibrated photoluminescence lifetime imaging of crystalline silicon S Herlufsen, J Schmidt, D Hinken, K Bothe, R Brendel physica status solidi (RRL)–Rapid Research Letters 2 (6), 245-247, 2008 | 127 | 2008 |
| Impurity-related limitations of next-generation industrial silicon solar cells J Schmidt, B Lim, D Walter, K Bothe, S Gatz, T Dullweber, PP Altermatt 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-5, 2012 | 110 | 2012 |
| Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon JD Murphy, K Bothe, R Krain, VV Voronkov, RJ Falster Journal of Applied Physics 111 (11), 113709, 2012 | 97 | 2012 |
| Dynamic carrier lifetime imaging of silicon wafers using an infrared-camera-based approach K Ramspeck, S Reißenweber, J Schmidt, K Bothe, R Brendel Applied Physics Letters 93 (10), 102104, 2008 | 92 | 2008 |
| Generation and annihilation of boron–oxygen-related recombination centers in compensated - and -type silicon B Lim, F Rougieux, D Macdonald, K Bothe, J Schmidt Journal of Applied Physics 108 (10), 103722, 2010 | 87 | 2010 |
| Luminescence emission from forward-and reverse-biased multicrystalline silicon solar cells K Bothe, K Ramspeck, D Hinken, C Schinke, J Schmidt, S Herlufsen, ... Journal of Applied Physics 106 (10), 104510, 2009 | 85 | 2009 |
| Detection of the voltage distribution in photovoltaic modules by electroluminescence imaging T Potthoff, K Bothe, U Eitner, D Hinken, M Köntges Progress in Photovoltaics: Research and Applications 18 (2), 100-106, 2010 | 78 | 2010 |
| Recombination-enhanced formation of the metastable boron–oxygen complex in crystalline silicon K Bothe, R Hezel, J Schmidt Applied physics letters 83 (6), 1125-1127, 2003 | 78 | 2003 |
| Kinetics of the electronically stimulated formation of a boron-oxygen complex in crystalline silicon DW Palmer, K Bothe, J Schmidt Physical Review B 76 (3), 035210, 2007 | 76 | 2007 |
| Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation JD Murphy, RE McGuire, K Bothe, VV Voronkov, RJ Falster Solar energy materials and solar cells 120, 402-411, 2014 | 75 | 2014 |
| Can luminescence imaging replace lock-in thermography on solar cells? O Breitenstein, J Bauer, K Bothe, D Hinken, J Müller, W Kwapil, ... IEEE Journal of Photovoltaics 1 (2), 159-167, 2011 | 75 | 2011 |
| Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature B Lim, K Bothe, J Schmidt physica status solidi (RRL)–Rapid Research Letters 2 (3), 93-95, 2008 | 74 | 2008 |
Jan SchmidtProfessor, Institute for Solar Energy Research Hamelin (ISFH) & Leibniz University HannoverVerified email at isfh.de
