Karsten Bothe
Karsten Bothe
Group Leader Solar Cell Characterisation and simulation, Institut für Solarenergieforschung
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Structure and transformation of the metastable boron-and oxygen-related defect center in crystalline silicon
J Schmidt, K Bothe
Physical review B 69 (2), 024107, 2004
Electronically activated boron-oxygen-related recombination centers in crystalline silicon
K Bothe, J Schmidt
Journal of Applied Physics 99 (1), 013701, 2006
Fundamental boron–oxygen‐related carrier lifetime limit in mono‐and multicrystalline silicon
K Bothe, R Sinton, J Schmidt
Progress in photovoltaics: Research and Applications 13 (4), 287-296, 2005
Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon
C Schinke, P Christian Peest, J Schmidt, R Brendel, K Bothe, MR Vogt, ...
AIP Advances 5 (6), 067168, 2015
Series resistance imaging of solar cells by voltage dependent electroluminescence
D Hinken, K Ramspeck, K Bothe, B Fischer, R Brendel
Applied Physics Letters 91 (18), 182104, 2007
Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography
K Ramspeck, K Bothe, D Hinken, B Fischer, J Schmidt, R Brendel
Applied Physics Letters 90 (15), 153502, 2007
Understanding junction breakdown in multicrystalline solar cells
O Breitenstein, J Bauer, K Bothe, W Kwapil, D Lausch, U Rau, J Schmidt, ...
Journal of applied physics 109 (7), 5, 2011
19.4%‐efficient large‐area fully screen‐printed silicon solar cells
S Gatz, H Hannebauer, R Hesse, F Werner, A Schmidt, T Dullweber, ...
physica status solidi (RRL)–Rapid Research Letters 5 (4), 147-149, 2011
Photoconductance‐calibrated photoluminescence lifetime imaging of crystalline silicon
S Herlufsen, J Schmidt, D Hinken, K Bothe, R Brendel
physica status solidi (RRL)–Rapid Research Letters 2 (6), 245-247, 2008
Impurity-related limitations of next-generation industrial silicon solar cells
J Schmidt, B Lim, D Walter, K Bothe, S Gatz, T Dullweber, PP Altermatt
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-5, 2012
Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
JD Murphy, K Bothe, R Krain, VV Voronkov, RJ Falster
Journal of Applied Physics 111 (11), 113709, 2012
Dynamic carrier lifetime imaging of silicon wafers using an infrared-camera-based approach
K Ramspeck, S Reißenweber, J Schmidt, K Bothe, R Brendel
Applied Physics Letters 93 (10), 102104, 2008
Detection of the voltage distribution in photovoltaic modules by electroluminescence imaging
T Potthoff, K Bothe, U Eitner, D Hinken, M Köntges
Progress in Photovoltaics: Research and Applications 18 (2), 100-106, 2010
Generation and annihilation of boron–oxygen-related recombination centers in compensated - and -type silicon
B Lim, F Rougieux, D Macdonald, K Bothe, J Schmidt
Journal of Applied Physics 108 (10), 103722, 2010
Luminescence emission from forward-and reverse-biased multicrystalline silicon solar cells
K Bothe, K Ramspeck, D Hinken, C Schinke, J Schmidt, S Herlufsen, ...
Journal of Applied Physics 106 (10), 104510, 2009
Recombination-enhanced formation of the metastable boron–oxygen complex in crystalline silicon
K Bothe, R Hezel, J Schmidt
Applied Physics Letters 83 (6), 1125-1127, 2003
Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature
B Lim, K Bothe, J Schmidt
physica status solidi (RRL)–Rapid Research Letters 2 (3), 93-95, 2008
Can luminescence imaging replace lock-in thermography on solar cells?
O Breitenstein, J Bauer, K Bothe, D Hinken, J Müller, W Kwapil, ...
IEEE Journal of Photovoltaics 1 (2), 159-167, 2011
Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
JD Murphy, RE McGuire, K Bothe, VV Voronkov, RJ Falster
Solar Energy Materials and Solar Cells 120, 402-411, 2014
Kinetics of the electronically stimulated formation of a boron-oxygen complex in crystalline silicon
DW Palmer, K Bothe, J Schmidt
Physical Review B 76 (3), 035210, 2007
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