| A programmable two-qubit quantum processor in silicon TF Watson, SGJ Philips, E Kawakami, DR Ward, P Scarlino, M Veldhorst, ... Nature 555 (7698), 633, 2018 | 578 | 2018 |
| Spin blockade and exchange in Coulomb-confined silicon double quantum dots B Weber, YHM Tan, S Mahapatra, TF Watson, H Ryu, R Rahman, ... Nature nanotechnology 9 (6), 430, 2014 | 139 | 2014 |
| Benchmarking Gate Fidelities in a Two-Qubit Device X Xue, TF Watson, J Helsen, DR Ward, DE Savage, MG Lagally, ... Physical Review X 9 (2), 021011, 2019 | 108 | 2019 |
| Two-electron spin correlations in precision placed donors in silicon MA Broome, SK Gorman, MG House, SJ Hile, JG Keizer, D Keith, CD Hill, ... Nature communications 9 (1), 1-7, 2018 | 69 | 2018 |
| Atomically engineered electron spin lifetimes of 30 s in silicon TF Watson, B Weber, YL Hsueh, LCL Hollenberg, R Rahman, ... Science advances 3 (3), e1602811, 2017 | 62 | 2017 |
| Radio frequency measurements of tunnel couplings and singlet–triplet spin states in Si: P quantum dots MG House, T Kobayashi, B Weber, SJ Hile, TF Watson, J Van Der Heijden, ... Nature communications 6 (1), 1-6, 2015 | 55 | 2015 |
| High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor Charge State TF Watson, B Weber, MG House, H Büch, MY Simmons Physical review letters 115 (16), 166806, 2015 | 54 | 2015 |
| Engineering independent electrostatic control of atomic-scale (∼ 4 nm) silicon double quantum dots B Weber, S Mahapatra, TF Watson, MY Simmons Nano letters 12 (8), 4001-4006, 2012 | 44 | 2012 |
| Single-shot spin readout in semiconductors near the shot-noise sensitivity limit D Keith, MG House, MB Donnelly, TF Watson, B Weber, MY Simmons Physical Review X 9 (4), 041003, 2019 | 43 | 2019 |
| High-fidelity single-shot singlet-triplet readout of precision-placed donors in silicon MA Broome, TF Watson, D Keith, SK Gorman, MG House, JG Keizer, ... Physical review letters 119 (4), 046802, 2017 | 40 | 2017 |
| Qubits made by advanced semiconductor manufacturing AMJ Zwerver, T Krähenmann, TF Watson, L Lampert, HC George, ... Nature Electronics 5 (3), 184-190, 2022 | 37 | 2022 |
| Transport in asymmetrically coupled donor-based silicon triple quantum dots TF Watson, B Weber, JA Miwa, S Mahapatra, RMP Heijnen, MY Simmons Nano letters 14 (4), 1830-1835, 2014 | 29 | 2014 |
| Repetitive quantum nondemolition measurement and soft decoding of a silicon spin qubit X Xue, B D’Anjou, TF Watson, DR Ward, DE Savage, MG Lagally, ... Physical Review X 10 (2), 021006, 2020 | 23 | 2020 |
| High volume electrical characterization of semiconductor qubits R Pillarisetty, HC George, TF Watson, L Lampert, N Thomas, S Bojarski, ... 2019 IEEE International Electron Devices Meeting (IEDM), 31.5. 1-31.5. 4, 2019 | 20 | 2019 |
| Qubit device integration using advanced semiconductor manufacturing process technology R Pillarisetty, N Thomas, HC George, K Singh, J Roberts, L Lampert, ... 2018 IEEE International Electron Devices Meeting (IEDM), 6.3. 1-6.3. 4, 2018 | 19 | 2018 |
| Spatial noise correlations in a Si/SiGe two-qubit device from Bell state coherences JM Boter, X Xue, T Krähenmann, TF Watson, VN Premakumar, DR Ward, ... Physical Review B 101 (23), 235133, 2020 | 11 | 2020 |
| Possible polarization and spin-dependent aspects of quantum gravity DV Ahluwalia, NG Gresnigt, AB Nielsen, D Schritt, TF Watson International Journal of Modern Physics D 17 (03n04), 495-504, 2008 | 11 | 2008 |
| Spin–orbit coupling in silicon for electrons bound to donors B Weber, YL Hsueh, TF Watson, R Li, AR Hamilton, LCL Hollenberg, ... npj Quantum Information 4 (1), 1-5, 2018 | 10 | 2018 |
| A Fully Integrated Cryo-CMOS SoC for Qubit Control in Quantum Computers Capable of State Manipulation, Readout and High-Speed Gate Pulsing of Spin Qubits in Intel 22nm FFL … JS Park, S Subramanian, L Lampert, T Mladenov, I Klotchkov, D Kurian, ... ISSCC, 208-210, 2021 | 9 | 2021 |
| Extracting inter-dot tunnel couplings between few donor quantum dots in silicon SK Gorman, MA Broome, JG Keizer, TF Watson, SJ Hile, WJ Baker, ... New Journal of Physics 18 (5), 053041, 2016 | 9 | 2016 |
