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Neophytos Lophitis
Neophytos Lophitis
Assistant Professor at University of Nottingham
Verified email at Nottingham.ac.uk - Homepage
Title
Cited by
Cited by
Year
A new approach for broken rotor bar detection in induction motors using frequency extraction in stray flux signals
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis
IEEE Transactions on Industry Applications 55 (4), 3501-3511, 2019
742019
TCAD device modelling and simulation of wide bandgap power semiconductors
N Lophitis, A Arvanitopoulos, S Perkins, M Antoniou, YK Sharma
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their …, 2018
372018
On the Investigation of the “Anode Side” SuperJunction IGBT Design Concept
M Antoniou, N Lophitis, F Udrea, F Bauer, UR Vemulapati, U Badstuebner
IEEE Electron Device Letters, 2017
342017
Analysis of stray flux spectral components in induction machines under rotor bar breakages at various locations
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino-Daviu, KN Gyftakis
2018 XIII International Conference on Electrical Machines (ICEM), 2345-2351, 2018
302018
Novel approach towards plasma enhancement in Trench Insulated Gate Bipolar Transistors
M Antoniou, N Lophitis, I Lestas, F Udrea, F Bauer, M Bellini, I Nistor, ...
IEEE Electron Device Letters 36 (8), 823 - 825, 2015
302015
The destruction mechanism in GCTs
N Lophitis, M Antoniou, F Udrea, FD Bauer, I Nistor, M Arnold, T Wikstrom, ...
IEEE transactions on electron devices 60 (2), 819-826, 2013
302013
Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation
A Arvanitopoulos, N Lophitis, KN Gyftakis, S Perkins, M Antoniou
Semiconductor Science and Technology 32 (10), 104009, 2017
272017
Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC
A Arvanitopoulos, N Lophitis, S Perkins, KN Gyftakis, MB Guadas, ...
2017 IEEE 11th International Symposium on Diagnostics for Electrical …, 2017
232017
Retrograde p-well for 10-kV class SiC IGBTs
AK Tiwari, M Antoniou, N Lophitis, S Perkin, T Trajkovic, F Udrea
IEEE Transactions on Electron Devices 66 (7), 3066-3072, 2019
222019
A Content and Language Integrated Learning (CLIL) Project: Opportunities and challenges in the context of heritage language education
M Charalampidi, M Hammond, N Hadjipavlou, N Lophitis
The European Conference on Language Learning 2017 Official Conference …, 2017
192017
Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses
M Antoniou, N Lophitis, F Udrea, F Bauer, I Nistor, M Bellini, M Rahimo
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
182015
Experimentally validated three dimensional GCT wafer level simulations
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikström, J Vobecky
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
172012
FEM approach for diagnosis of induction machines' non‐adjacent broken rotor bars by short‐time Fourier transform spectrogram
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino‐Daviu, KN Gyftakis
The Journal of Engineering 2019 (17), 4566-4570, 2019
162019
On the broken rotor bar diagnosis using time–frequency analysis:‘Is one spectral representation enough for the characterisation of monitored signals?’
PA Panagiotou, I Arvanitakis, N Lophitis, JA Antonino‐Daviu, KN Gyftakis
IET Electric Power Applications 13 (7), 932-942, 2019
152019
Parameters influencing the maximum controllable current in gate commutated thyristors
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikstrom, J Vobecky
IET Circuits, Devices & Systems 8 (3), 221-226, 2014
152014
Parameters influencing the maximum controllable current in gate commutated thyristors
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikstrom, J Vobecky
IET Circuits, Devices & Systems 8 (3), 221-226, 2014
152014
On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes
AE Arvanitopoulos, M Antoniou, S Perkins, M Jennings, MB Guadas, ...
IEEE Transactions on Industry Applications 55 (4), 4080-4090, 2019
142019
High voltage semiconductor device with reduced peak electric field in active and termination areas of the device
P Ward, N Lophitis, T Trajkovic, F Udrea
US Patent 10,157,979, 2018
132018
Gate commutated thyristor with voltage independent maximum controllable current
N Lophitis, M Antoniou, F Udrea, I Nistor, MT Rahimo, M Arnold, ...
IEEE electron device letters 34 (8), 954-956, 2013
122013
An experimental demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor”(BGCT)
U Vemulapati, M Arnold, M Rahimo, J Vobecky, T Stiasny, N Lophitis, ...
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
112015
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