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Protyush Sahu
Protyush Sahu
Micron Technology
Verified email at umn.edu
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Cited by
Year
Observation of high spin-to-charge conversion by sputtered bismuth selenide thin films at room temperature
M Dc, JY Chen, T Peterson, P Sahu, B Ma, N Mousavi, R Harjani, ...
Nano letters 19 (8), 4836-4844, 2019
452019
Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet
M Dc, T Liu, JY Chen, T Peterson, P Sahu, H Li, Z Zhao, M Wu, JP Wang
Applied Physics Letters 114 (10), 2019
382019
Bipolar electric-field switching of perpendicular magnetic tunnel junctions through voltage-controlled exchange coupling
D Zhang, M Bapna, W Jiang, D Sousa, YC Liao, Z Zhao, Y Lv, P Sahu, ...
Nano letters 22 (2), 622-629, 2022
302022
Spin pumping and large field-like torque at room temperature in sputtered amorphous WTe2− x films
Y Fan, H Li, M Dc, T Peterson, J Held, P Sahu, J Chen, D Zhang, ...
APL Materials 8 (4), 2020
292020
Weak antilocalization and low-temperature characterization of sputtered polycrystalline bismuth selenide
P Sahu, JY Chen, JC Myers, JP Wang
Applied Physics Letters 112 (12), 2018
262018
Large unidirectional spin Hall and Rashba− Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures
Y Lv, J Kally, T Liu, P Quarterman, T Pillsbury, BJ Kirby, AJ Grutter, ...
Applied Physics Reviews 9 (1), 2022
212022
Electric field switchable magnetic devices
JP Wang, D Zhang, P Sahu
US Patent 11,183,227, 2021
112021
Annealing Temperature Effects on Spin Hall Magnetoresistance in Perpendicularly Magnetized W/CoFeB Bilayers
TJ Peterson, P Sahu, D Zhang, DC Mahendra, JP Wang
IEEE Transactions on Magnetics 55 (2), 1-4, 2018
8*2018
Topological material for trapping charge and switching a ferromagnet
JP Wang, P Sahu
US Patent 11,328,757, 2022
52022
Effects of mobile oxygen ions in top-gated synthetic antiferromagnet structure
P Sahu, D Zhang, T Peterson, JP Wang
Applied Physics Letters 117 (20), 2020
32020
Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs
P Sahu, J Chen, JP Wang
AIP Advances 10 (015315), 2020
32020
Room temperature high charge to spin conversion in amorphous topological insulator
P Sahu, J Chen, X Devaux, H Jaffrès, S Migot, H Dang, JM George, Y Lu, ...
Scanning Electron Microsc Meet at, 2019
32019
Room Temperature Spin-to-Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1–x/CoFeB Bilayers
P Sahu, Y Yang, Y Fan, H Jaffrès, JY Chen, X Devaux, Y Fagot-Revurat, ...
ACS Applied Materials & Interfaces 15 (32), 38592-38602, 2023
12023
Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor δ-TaN
PW Swatek, X Hang, Y Fan, W Jiang, H Yun, D Lyu, D Zhang, TJ Peterson, ...
Physical Review Materials 6 (7), 074206, 2022
12022
Spin pumping and large field-like torque at room temperature in sputtered amorphous WTe films
F Yihong, L Hongshi, DC Mahendra, P Thomas, H Jacob, S Protyush, ...
arXiv preprint arXiv:2002.09510, 2020
12020
Room Temperature Mott Hopping and Spin pumping Characterization of Amorphous Gd-alloyed Bi2Se3
P Sahu, Y Fan, T Peterson, J Chen, X Devaux, H Jaffrès, S Migot, H Dang, ...
arXiv preprint arXiv.1911.03323 10, 1911
11911
Investigation of Materials, Stacks, and Energy-Efficient Switching of Voltage-Controlled Exchange Coupling Perpendicular Magnetic Tunnel Junctions
D Lyu, D Zhang, B Zink, J Shoup, M Bapna, A Habiboglu, W Jiang, Y Lv, ...
Bulletin of the American Physical Society, 2024
2024
Charge-to-spin conversion by topological surface states of amorphous Gd-alloyed BixSe1-x
Y Yang, P Sahu, Y Fan, H Jaffres, JY Chen, X Devaux, Y Fagot-Revurat, ...
Bulletin of the American Physical Society, 2024
2024
Electric field switchable magnetic devices
JP Wang, D Zhang, P Sahu
US Patent 11,735,242, 2023
2023
Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN
P Wojciech Swatek, X Hang, Y Fan, W Jiang, H Yun, D Lyu, D Zhang, ...
arXiv e-prints, arXiv: 2207.08872, 2022
2022
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