A.R. Peaker
A.R. Peaker
Verified email at manchester.ac.uk - Homepage
Cited by
Cited by
Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors
L Dobaczewski, AR Peaker, K Bonde Nielsen
Journal of applied physics 96 (9), 4689-4728, 2004
Laplace transform deep‐level transient spectroscopic studies of defects in semiconductors
L Dobaczewski, P Kaczor, ID Hawkins, AR Peaker
Journal of applied physics 76 (1), 194-198, 1994
Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device
AM Song, M Missous, P Omling, AR Peaker, L Samuelson, W Seifert
Applied Physics Letters 83 (9), 1881-1883, 2003
Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi
VP Markevich, ID Hawkins, AR Peaker, KV Emtsev, VV Emtsev, ...
Physical Review B 70 (23), 235213, 2004
Defects in microelectronic materials and devices
DM Fleetwood, RD Schrimpf
CRC press, 2008
Detection of minority-carrier traps using transient spectroscopy
R Brunwin, B Hamilton, P Jordan, AR Peaker
Electronics Letters 15 (12), 349-350, 1979
Recombination processes in erbium-doped MBE silicon
H Efeoglu, JH Evans, TE Jackman, B Hamilton, DC Houghton, JM Langer, ...
Semiconductor science and technology 8 (2), 236, 1993
Electronic properties of antimony-vacancy complex in Ge crystals
VP Markevich, AR Peaker, VV Litvinov, VV Emtsev, LI Murin
Journal of applied physics 95 (8), 4078-4083, 2004
Defect reactions associated with divacancy elimination in silicon
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, JL Lindström
Journal of Physics: Condensed Matter 15 (39), S2779, 2003
Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs
I Poole, KE Singer, AR Peaker, AC Wright
Journal of crystal growth 121 (1-2), 121-131, 1992
Deep‐state‐controlled minority‐carrier lifetime in n‐type gallium phosphide
B Hamilton, AR Peaker, DR Wight
Journal of Applied Physics 50 (10), 6373-6385, 1979
Evidence for substitutional-interstitial defect motion leading to DX behavior by donors in Al x Ga 1− x As
L Dobaczewski, P Kaczor, M Missous, AR Peaker, Z Żytkiewicz
Physical review letters 68 (16), 2508, 1992
Capture cross sections of the gold donor and acceptor states in n-type Czochralski silicon
RH Wu, AR Peaker
Solid-State Electronics 25 (7), 643-649, 1982
Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ...
Physical Review B 80 (23), 235207, 2009
Electronic properties of vacancy–oxygen complex in Ge crystals
VP Markevich, ID Hawkins, AR Peaker, VV Litvinov, LI Murin, ...
Applied Physics Letters 81 (10), 1821-1823, 2002
Coexistence of deep levels with optically active InAs quantum dots
SW Lin, C Balocco, M Missous, AR Peaker, AM Song
Physical Review B 72 (16), 165302, 2005
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald
physica status solidi (RRL)–Rapid Research Letters 10 (6), 443-447, 2016
Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect
CZ Zhao, JF Zhang, MH Chang, AR Peaker, S Hall, G Groeseneken, ...
IEEE Transactions on Electron Devices 55 (7), 1647-1656, 2008
Capacitance and conductance deep level transient spectroscopy in field‐effect transistors
ID Hawkins, AR Peaker
Applied physics letters 48 (3), 227-229, 1986
Deep donors in GaSb grown by molecular beam epitaxy
I Poole, ME Lee, IR Cleverley, AR Peaker, KE Singer
Applied physics letters 57 (16), 1645-1647, 1990
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