Mohamed Elkhouly
Mohamed Elkhouly
Millimeter-wave IC Researcher
Verified email at nokia-bell-labs.com
Title
Cited by
Cited by
Year
Wideband 240-GHz transmitter and receiver in BiCMOS technology with 25-Gbit/s data rate
MH Eissa, A Malignaggi, R Wang, M Elkhouly, K Schmalz, AC Ulusoy, ...
IEEE Journal of Solid-State Circuits 53 (9), 2532-2542, 2018
412018
220–250-GHz Phased-Array Circuits in 0.13- SiGe BiCMOS Technology
M Elkhouly, S Glisic, C Meliani, F Ellinger, JC Scheytt
IEEE, 2013
33*2013
60 GHz ultrawideband polarimetric MIMO sensing for wireless multi-gigabit and radar
APG Ariza, R Müller, F Wollenschläger, A Schulz, M Elkhouly, Y Sun, ...
IEEE Transactions on Antennas and Propagation 61 (4), 1631-1641, 2013
332013
245-GHz transmitter array in SiGe BiCMOS for gas spectroscopy
K Schmalz, J Borngräber, W Debski, M Elkhouly, R Wang, PFX Neumaier, ...
IEEE Transactions on Terahertz Science and Technology 6 (2), 318-327, 2016
312016
A 240 GHz direct conversion IQ receiver in 0.13 μm SiGe BiCMOS technology
M Elkhouly, Y Mao, S Glisic, C Meliani, F Ellinger, JC Scheytt
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 305-308, 2013
272013
60 GHz polarimetric MIMO sensing: Architectures and technology
APG Ariza, R Muller, R Stephan, F Wollenschlager, A Schulz, M Elkhouly, ...
Antennas and Propagation (EUCAP), 2012 6th European Conference on, 2578-2582, 2012
202012
Fully integrated 60 GHz transceiver in SiGe BiCMOS, RF modules, and 3.6 Gbit/s OFDM data transmission
S Glisic, JC Scheytt, Y Sun, F Herzel, R Wang, K Schmalz, M Elkhouly, ...
International Journal of Microwave and Wireless Technologies 3 (2), 139, 2011
182011
A 60 GHz wideband high output P1dB up-conversion image rejection mixer in 0.25 µm SiGe technology
M Elkhouly, S Glisic, C Scheytt
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical …, 2010
182010
245 GHz SiGe transmitter array for gas spectroscopy
K Schmalz, J Borngraber, W Debski, M Elkhouly, R Wang, P Neumaier, ...
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2014
162014
A 246 GHz Hetero-integrated frequency source in InP-on-BiCMOS technology
M Hossain, T Kraemer, I Ostermay, T Jensen, B Janke, Y Borokhovych, ...
IEEE microwave and wireless components letters 24 (7), 469-471, 2014
162014
60 GHz ultrawideband hybrid-integrated dual-polarized front-end in LTCC technology
R Muller, AP Garcia Ariza, L Xia, F Wollenschlager, A Schulz, ...
Antennas and Propagation (EUCAP), Proceedings of the 5th European Conference …, 2011
162011
A fully integrated 60 GHz transmitter front-end in SiGe BiCMOS technology
S Glisic, K Schmalz, F Herzel, R Wang, M Elkhouly, Y Sun, JC Scheytt
2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2011
162011
Integrated 240-GHz dielectric sensor with dc readout circuit in a 130-nm SiGe BiCMOS technology
D Wang, K Schmalz, MH Eissa, J Borngräber, M Kucharski, M Elkhouly, ...
IEEE Transactions on Microwave Theory and Techniques 66 (9), 4232-4241, 2018
142018
60-GHz adaptive beamforming receiver arrays for interference mitigation
CS Choi, M Elkhouly, E Grass, C Scheytt
21st Annual IEEE International Symposium on Personal, Indoor and Mobile …, 2010
142010
A 220–275 GHz direct-conversion receiver in 130-nm SiGe: C BiCMOS technology
MH Eissa, A Awny, M Ko, K Schmalz, M Elkhouly, A Malignaggi, ...
IEEE Microwave and Wireless Components Letters 27 (7), 675-677, 2017
122017
A 245 GHz ASK modulator and demodulator with 40 Gbits/sec data rate in 0.13 μm SiGe BiCMOS technology
M Elkhouly, Y Mao, C Meliani, F Ellinger, C Schyett
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-3, 2013
122013
A 164 GHz hetero-integrated source in InP-on-BiCMOS technology
T Jensen, T Al-Sawaf, M Lisker, S Glisic, M Elkhouly, T Kraemer, ...
2013 European Microwave Integrated Circuit Conference, 244-247, 2013
112013
RF-MEMS switch module in a 0.25 μm BiCMOS technology
M Kaynak, M Wietstruck, W Zhang, J Drews, R Scholz, D Knoll, ...
2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2012
112012
A -Band Four-Element Butler Matrix in 0.13 µm SiGe BiCMOS Technology
M Elkhouly, Y Mao, C Meliani, JC Scheytt, F Ellinger
IEEE Journal of Solid-State Circuits 49 (9), 1916-1926, 2014
92014
60 GHz ultrawideband front-ends with gain control, phase shifter, and wave guide transition in LTCC technology
R Muller, F Wollenschlager, A Schulz, M Elkhouly, U Trautwein, MA Hein, ...
Antennas and Propagation (EUCAP), 2012 6th European Conference on, 3255-3259, 2012
92012
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