Otwin Breitenstein
Otwin Breitenstein
Researcher, Max Planck Institute, Associate Professor, University Halle
Verified email at mpi-halle.mpg.de
Cited by
Cited by
Lock-in thermography: Basics and use for evaluating electronic devices and materials
O Breitenstein, W Warta, MC Schubert
Springer, 2019
Shunt types in crystalline silicon solar cells
O Breitenstein, JP Rakotoniaina, MH Al Rifai, M Werner
Progress in Photovoltaics: Research and Applications 12 (7), 529-538, 2004
Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells
V Naumann, D Lausch, A Hähnel, J Bauer, O Breitenstein, A Graff, ...
Solar Energy Materials and Solar Cells 120, 383-389, 2014
On the detection of shunts in silicon solar cells by photo‐and electroluminescence imaging
O Breitenstein, J Bauer, T Trupke, RA Bardos
Progress in Photovoltaics: research and Applications 16 (4), 325-330, 2008
Shunts due to laser scribing of solar cells evaluated by highly sensitive lock-in thermography
O Breitenstein, M Langenkamp, O Lang, A Schirrmacher
Solar Energy Materials and Solar Cells 65 (1-4), 55-62, 2001
Quantitative evaluation of shunts in solar cells by lock‐in thermography
O Breitenstein, JP Rakotoniaina, MHA Rifai
Progress in Photovoltaics: Research and Applications 11 (8), 515-526, 2003
Understanding junction breakdown in multicrystalline solar cells
O Breitenstein, J Bauer, K Bothe, W Kwapil, D Lausch, U Rau, J Schmidt, ...
Journal of Applied Physics 109 (7), 5, 2011
Nondestructive local analysis of current–voltage characteristics of solar cells by lock-in thermography
O Breitenstein
Solar Energy Materials and Solar Cells 95 (10), 2933-2936, 2011
On the mechanism of potential‐induced degradation in crystalline silicon solar cells
J Bauer, V Naumann, S Großer, C Hagendorf, M Schütze, O Breitenstein
physica status solidi (RRL)–Rapid Research Letters 6 (8), 331-333, 2012
Microscopic lock-in thermography investigation of leakage sites in integrated circuits
O Breitenstein, M Langenkamp, F Altmann, D Katzer, A Lindner, H Eggers
Review of scientific instruments 71 (11), 4155-4160, 2000
Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation
S Steingrube, O Breitenstein, K Ramspeck, S Glunz, A Schenk, ...
Journal of Applied Physics 110 (1), 014515, 2011
Quantitative evaluation of electroluminescence images of solar cells
O Breitenstein, A Khanna, Y Augarten, J Bauer, JM Wagner, K Iwig
physica status solidi (RRL)–Rapid Research Letters 4 (1‐2), 7-9, 2010
Potential-induced degradation (PID): Introduction of a novel test approach and explanation of increased depletion region recombination
D Lausch, V Naumann, O Breitenstein, J Bauer, A Graff, J Bagdahn, ...
IEEE journal of photovoltaics 4 (3), 834-840, 2014
The role of stacking faults for the formation of shunts during potential‐induced degradation of crystalline Si solar cells
V Naumann, D Lausch, A Graff, M Werner, S Swatek, J Bauer, A Hähnel, ...
physica status solidi (RRL)–Rapid Research Letters 7 (5), 315-318, 2013
Hot spots in multicrystalline silicon solar cells: avalanche breakdown due to etch pits
J Bauer, JM Wagner, A Lotnyk, H Blumtritt, B Lim, J Schmidt, ...
physica status solidi (RRL)–Rapid Research Letters 3 (2‐3), 40-42, 2009
Defect induced non-ideal dark I–V characteristics of solar cells
O Breitenstein, J Bauer, A Lotnyk, JM Wagner
Superlattices and Microstructures 45 (4-5), 182-189, 2009
Lock-in IR-thermography-A novel tool for material and device characterization
ST Huth, O Breitenstein, A Huber, D Dantz, U Lambert, F Altmann
diffusion and defect data part B solid state phenomena, 741-746, 2002
Luminescence emission from forward-and reverse-biased multicrystalline silicon solar cells
K Bothe, K Ramspeck, D Hinken, C Schinke, J Schmidt, S Herlufsen, ...
Journal of Applied Physics 106 (10), 104510, 2009
Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon: Assessing the role of impurities in silicon nitride crucible lining material
T Buonassisi, AA Istratov, MD Pickett, JP Rakotoniaina, O Breitenstein, ...
Journal of Crystal Growth 287 (2), 402-407, 2006
Electrical properties of nominally undoped silicon nanowires grown by molecular-beam epitaxy
J Bauer, F Fleischer, O Breitenstein, L Schubert, P Werner, U Gösele, ...
Applied physics letters 90 (1), 012105, 2007
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