Federica Gencarelli
Federica Gencarelli
Materials science engineer - ON Semiconductor
Verified email at onsemi.com
Cited by
Cited by
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
B Vincent, F Gencarelli, H Bender, C Merckling, B Douhard, DH Petersen, ...
Applied Physics Letters 99 (15), 152103, 2011
Method for Growing a Monocrystalline Tin-Containing Semiconductor Material
B Vincent, F Gencarelli, R Loo, M Caymax
US Patent App. 14/008,560, 2014
GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
A Gassenq, F Gencarelli, J Van Campenhout, Y Shimura, R Loo, G Narcy, ...
Optics express 20 (25), 27297-27303, 2012
Silicon-based photonic integration beyond the telecommunication wavelength range
G Roelkens, UD Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
F Gencarelli, B Vincent, J Demeulemeester, A Vantomme, A Moussa, ...
ECS Journal of Solid State Science and Technology 2 (4), P134, 2013
Low-temperature Ge and GeSn chemical vapor deposition using Ge2H6
F Gencarelli, B Vincent, L Souriau, O Richard, W Vandervorst, R Loo, ...
Thin Solid Films 520 (8), 3211-3215, 2012
Silicon-based heterogeneous photonic integrated circuits for the mid-infrared
G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
Optical Materials Express 3 (9), 1523-1536, 2013
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method
S Gupta, B Vincent, B Yang, D Lin, F Gencarelli, JYJ Lin, R Chen, ...
2012 International Electron Devices Meeting, 16.2. 1-16.2. 4, 2012
GeSn channel nMOSFETs: Material potential and technological outlook
S Gupta, B Vincent, DHC Lin, M Gunji, A Firrincieli, F Gencarelli, ...
2012 Symposium on VLSI Technology (VLSIT), 95-96, 2012
Ge1-xSnx materials: Challenges and applications
R Loo, B Vincent, F Gencarelli, C Merckling, A Kumar, G Eneman, ...
ECS Journal of Solid State Science and Technology 2 (1), N35, 2012
In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge (001) substrates
Y Shimura, S Takeuchi, O Nakatsuka, B Vincent, F Gencarelli, T Clarysse, ...
Thin Solid Films 520 (8), 3206-3210, 2012
Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1−xSnx films
F Gencarelli, D Grandjean, Y Shimura, B Vincent, D Banerjee, ...
Journal of Applied Physics 117 (9), 095702, 2015
GeSn technology: Impact of Sn on Ge CMOS applications
S Zaima, O Nakatsuka, Y Shimura, M Adachi, M Nakamura, S Takeuchi, ...
ECS Transactions 41 (7), 231, 2011
Biaxial and uniaxial compressive stress implemented in Ge (Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
B Vincent, F Gencarelli, D Lin, L Nyns, O Richard, H Bender, B Douhard, ...
ECS Transactions 41 (7), 239, 2011
Electrical properties of extended defects in strain relaxed GeSn
S Gupta, E Simoen, R Loo, Y Shimura, C Porret, F Gencarelli, K Paredis, ...
Applied Physics Letters 113 (2), 022102, 2018
Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
F Gencarelli, Y Shimura, A Kumar, B Vincent, A Moussa, D Vanhaeren, ...
Thin Solid Films 590, 163-169, 2015
Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
B Baert, S Gupta, F Gencarelli, R Loo, E Simoen, ND Nguyen
Solid-State Electronics 110, 65-70, 2015
Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS
S Gupta, E Simoen, H Vrielinck, C Merckling, B Vincent, F Gencarelli, ...
ECS Transactions 53 (1), 251, 2013
On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge(1−x)Sn(x) unraveled with atom probe tomography
A Kumar, J Demeulemeester, J Bogdanowicz, J Bran, D Melkonyan, ...
Journal of Applied Physics 118 (2), 025302, 2015
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