| Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography P Deb, H Kim, V Rawat, M Oliver, S Kim, M Marshall, E Stach, T Sands Nano Letters 5 (9), 1847-1851, 2005 | 137 | 2005 |
| GaN nanorod Schottky and p− n junction diodes P Deb, H Kim, Y Qin, R Lahiji, M Oliver, R Reifenberger, T Sands Nano letters 6 (12), 2893-2898, 2006 | 115 | 2006 |
| Transfer printed flexible and stretchable thin film solar cells using a water-soluble sacrificial layer J Nam, Y Lee, W Choi, CS Kim, H Kim, J Kim, DH Kim, S Jo Advanced Energy Materials 6, 1601269, 2016 | 73 | 2016 |
| Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/SrTiO3 junctions E Lee, M Gwon, DW Kim, H Kim Applied Physics Letters 98 (13), 2011 | 50 | 2011 |
| A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells W Choi, CZ Kim, CS Kim, W Heo, T Joo, SY Ryu, H Kim, H Kim, HK Kang, ... Advanced Energy Materials 4 (16), 1400589, 2014 | 47 | 2014 |
| Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells HK Kang, SH Park, DH Jun, CZ Kim, KM Song, W Park, CG Ko, H Kim Semiconductor science and technology 26 (7), 075009, 2011 | 41 | 2011 |
| Silver Schottky contacts to a-plane bulk ZnO H Kim, H Kim, DW Kim Journal of Applied Physics 108 (7), 2010 | 39 | 2010 |
| Current transport in Pt Schottky contacts to a-plane n-type GaN SH Phark, H Kim, KM Song, PG Kang, HS Shin, DW Kim Journal of Physics D: Applied Physics 43 (16), 165102, 2010 | 36 | 2010 |
| Effect of oxygen plasma treatment on the electrical properties in Ag/bulk ZnO Schottky diodes H Kim, H Kim, DW Kim Vacuum 101, 92-97, 2014 | 30 | 2014 |
| Control and understanding of metal contacts to β-Ga2O3 single crystals: a review H Kim SN Applied Sciences 4, 27, 2022 | 26 | 2022 |
| Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition S Choi, A Ansari, H Yun, H Kim, B Shong, B Choi Journal of Alloys and Compounds 854, 157186, 2021 | 23 | 2021 |
| Improved interfacial properties of thermal atomic layer deposited AlN on GaN H Kim, ND Kim, SC An, HJ Yoon, BJ Choi Vacuum 159, 379, 2019 | 23 | 2019 |
| ALD growth of ZnO on p-Si and electrical characterization of ZnO/p-Si heterojunctions H Kim, MJ Jung, S Choi, BJ Choi Materials Today Communications 25, 101265, 2020 | 20 | 2020 |
| Nucleation and growth behavior of aluminum nitride film using thermal atomic layer deposition HJ Yun, H Kim, BJ Choi Ceramics International, 2020 | 19 | 2020 |
| Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN H Kim, HJ Yoon, BJ Choi Nanoscale Research Letters 13, 232, 2018 | 19 | 2018 |
| Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics H Kim, HJ Yun, S Choi, BJ Choi Journal of Vacuum Science & Technology B 37, 2019 | 17 | 2019 |
| Reactive ion etching damage in n-GaN and its recovery by post-etch treatment H Kim Electronics Letters 44 (17), 1037-1039, 2008 | 16 | 2008 |
| High-reflectivity Al-Pt nanostructured Ohmic contact to p-GaN HG Kim, P Deb, T Sands IEEE Transactions on Electron Devices 53 (10), 2448-2453, 2006 | 15 | 2006 |
| Effect of KOH treatment on the Schottky barrier height and reverse leakage current in Pt/n-GaN HG Kim, SH Kim, P Deb, T Sands Journal of electronic materials 35, 107-112, 2006 | 15 | 2006 |
| Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells Y Cho, E Lee, DW Kim, S Ahn, GY Jeong, J Gwak, JH Yun, H Kim Current Applied Physics 13 (1), 37-40, 2013 | 14 | 2013 |
Byung Joon ChoiSeoul National University of Science and TechnologyVerified email at seoultech.ac.kr
