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Hoisung Chung
Hoisung Chung
Principal Engineer in Samsung Electronics
Verified email at samsung.com
Title
Cited by
Cited by
Year
Methods of manufacturing semiconductor devices
MK Song, HJ Lim, M Park, JH Do
US Patent 8,877,579, 2014
98*2014
Methods for fabricating semiconductor devices
HSC Dong Hyuk KIM, DongSuk Shin, Myungsun Kim
US Patent 8,551,846, 2013
49*2013
Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same
JB Kim, MG Kang, KH Moon, LEE Cho-Eun, J Su-Jin, MH Choi, Y Xu, ...
US Patent 10,297,601, 2019
472019
TiO2∕ Al2O3∕ TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
W Jeon, HS Chung, D Joo, SW Kang
Electrochemical and Solid-State Letters 11 (2), H19, 2007
472007
Transistors and methods of manufacturing the same
H Chung, DS Shin, D Kim, M Kim
US Patent 8,637,373, 2014
412014
Semiconductor devices and methods of fabricating the same
DH Kim, HS Chung, M Kim, DS Shin
US Patent 8,921,192, 2014
402014
Methods of forming semiconductor devices including a stressor in a recess
DS Shin, CW Lee, H Chung, YT Kim, N Lee
US Patent 9,214,530, 2015
34*2015
Semiconductor devices including a stressor in a recess and methods of forming the same
Dong-Suk Shin, Hyun-Chul Kang, Dong-hyun Roh, Pan-Kwi Park, Geo-Myung SHIN ...
US Patent 9,257,520, 2016
33*2016
Plasma-enhanced atomic layer deposition of TaN thin films using tantalum-pentafluoride and N2∕ H2∕ Ar plasma
HS Chung, JD Kwon, SW Kang
Journal of The Electrochemical Society 153 (11), C751, 2006
292006
Semiconductor device having embedded strain-inducing pattern and method of forming the same
DS Shin, M Kim, SJ Nam, PK Park, H Chung, N Lee
US Patent 8,907,426, 2014
282014
Semiconductor devices and methods of fabricating the same
DH Kim, DS Shin, M Kim, HS Chung
US Patent 9,640,658, 2017
242017
Semiconductor device including transistors having embedded source/drain regions each including upper and lower main layers comprising germanium
H Chung, D Kim, M Kim, DS Shin
US Patent 8,648,424, 2014
242014
Method of forming a semiconductor device having an epitaxial source/drain
HS Rhee, MS Kim, H Lee, HS Chung
US Patent App. 12/640,944, 2010
212010
Methods of forming semiconductor devices having faceted semiconductor patterns
M Kim, DS Shin, D Kim, YJ Lee, H Chung
US Patent 8,703,592, 2014
172014
Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the same
NIL Dong Hyuk KIM, Hoi Sung Chung, DongSuk Shin
US Patent 20,140,087,537, 2014
15*2014
Semiconductor device including transistor and method of manufacturing the same
NIL Dong Hyuk KIM, DongSuk Shin, Hoi Sung Chung
US Patent 8,937,343, 2015
11*2015
Semiconductor devices having field effect transistors with epitaxial patterns in recessed regions
DS Shin, DH Kim, M Kim, YJ Lee, HS Chung
US Patent 8,426,926, 2013
102013
Methods of fabricating a semiconductor device
H Lee, M Park, HS Rhee, M Kim, H Chung
US Patent App. 12/656,842, 2010
102010
Semiconductor devices including an epitaxial layer with a slanted surface
DH Kim, DS Shin, M Kim, HS Chung
US Patent 9,136,176, 2015
62015
Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same
JB Kim, MG Kang, KH Moon, LEE Cho-Eun, J Su-Jin, MH Choi, Y Xu, ...
US Patent 11,469,237, 2022
42022
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