Yuxuan Lin
Title
Cited by
Cited by
Year
Role of the Seeding Promoter in MoS2 Growth by Chemical Vapor Deposition
X Ling, YH Lee, Y Lin, W Fang, L Yu, MS Dresselhaus, J Kong
Nano letters 14 (2), 464-472, 2014
5292014
Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics
L Yu, YH Lee, X Ling, EJG Santos, YC Shin, Y Lin, M Dubey, E Kaxiras, ...
Nano letters 14 (6), 3055-3063, 2014
4452014
Dielectric Screening of Excitons and Trions in Single-Layer MoS2
Y Lin, X Ling, L Yu, S Huang, AL Hsu, YH Lee, J Kong, MS Dresselhaus, ...
Nano letters 14 (10), 5569-5576, 2014
3622014
Raman Enhancement Effect on Two-Dimensional Layered Materials: Graphene, h-BN and MoS2
X Ling, W Fang, YH Lee, PT Araujo, X Zhang, JF Rodriguez-Nieva, Y Lin, ...
Nano letters 14 (6), 3033-3040, 2014
2602014
Graphene/semiconductor heterojunction solar cells with modulated antireflection and graphene work function
Y Lin, X Li, D Xie, T Feng, Y Chen, R Song, H Tian, T Ren, M Zhong, ...
Energy & Environmental Science 6 (1), 108-115, 2013
1542013
Flexible Piezoelectric-Induced Pressure Sensors for Static Measurements Based on Nanowires/Graphene Heterostructures
Z Chen, Z Wang, X Li, Y Lin, N Luo, M Long, N Zhao, JB Xu
ACS nano 11 (5), 4507-4513, 2017
1492017
Leveraging nanocavity harmonics for control of optical processes in 2D semiconductors
GM Akselrod, T Ming, C Argyropoulos, TB Hoang, Y Lin, X Ling, DR Smith, ...
Nano letters 15 (5), 3578-3584, 2015
1482015
Parallel stitching of 2D materials
X Ling, Y Lin, Q Ma, Z Wang, Y Song, L Yu, S Huang, W Fang, X Zhang, ...
Advanced Materials 28 (12), 2322-2329, 2016
1472016
Direct optical detection of Weyl fermion chirality in a topological semimetal
Q Ma, SY Xu, CK Chan, CL Zhang, G Chang, Y Lin, W Xie, T Palacios, ...
Nature Physics, 2017
1342017
High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
L Yu, A Zubair, EJG Santos, X Zhang, Y Lin, Y Zhang, T Palacios
Nano letters 15 (8), 4928-4934, 2015
1202015
Enhanced photovoltaic properties in graphene/polycrystalline BiFeO3/Pt heterojunction structure
Y Zang, D Xie, X Wu, Y Chen, Y Lin, M Li, H Tian, X Li, Z Li, H Zhu, T Ren, ...
Applied Physics Letters 99 (13), 132904, 2011
1022011
Graphene based Schottky junction solar cells on patterned silicon-pillar-array substrate
T Feng, D Xie, Y Lin, Y Zang, T Ren, R Song, H Zhao, H Tian, X Li, H Zhu, ...
Applied Physics Letters 99 (23), 233505, 2011
922011
Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ...
Electron Devices, IEEE Transactions on 62 (7), 2155-2161, 2015
762015
Efficiency enhancement of graphene/silicon-pillar-array solar cells by HNO3 and PEDOT-PSS
T Feng, D Xie, Y Lin, H Zhao, Y Chen, H Tian, T Ren, X Li, Z Li, K Wang, ...
Nanoscale 4 (6), 2130-2133, 2012
732012
Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics
L Yu, D El-Damak, U Radhakrishna, X Ling, A Zubair, Y Lin, Y Zhang, ...
Nano Letters 16 (10), 6349-6356, 2016
682016
Flexible, ultrathin, and transparent sound-emitting devices using silver nanowires film
H Tian, D Xie, Y Yang, TL Ren, YX Lin, Y Chen, YF Wang, CJ Zhou, ...
Applied Physics Letters 99 (25), 253507, 2011
472011
1200 V GaN vertical fin power field-effect transistors
Y Zhang, M Sun, D Piedra, J Hu, Z Liu, Y Lin, X Gao, K Shepard, ...
2017 IEEE International Electron Devices Meeting (IEDM), 9.2. 1-9.2. 4, 2017
392017
Two-dimensional MoS 2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting
X Zhang, J Grajal, JL Vazquez-Roy, U Radhakrishna, X Wang, W Chern, ...
Nature 566 (7744), 368-372, 2019
372019
Ultrasmall Mode Volumes in Plasmonic Cavities of Nanoparticle‐On‐Mirror Structures
S Huang, T Ming, Y Lin, X Ling, Q Ruan, T Palacios, J Wang, ...
Small 12 (37), 5190-5199, 2016
322016
Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ...
2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016
222016
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