| Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers B So, J Kim, T Kwak, T Kim, J Lee, U Choi, O Nam RSC advances 8 (62), 35528-35533, 2018 | 40 | 2018 |
| Large-area far ultraviolet-C emission of Al0. 73Ga0. 27N/AlN multiple quantum wells using carbon nanotube based cold cathode electron-beam pumping J Lee, ST Yoo, B So, KC Park, O Nam Thin Solid Films 711, 138292, 2020 | 7 | 2020 |
| Epitaxial growth of deep ultraviolet light emitting diodes with two-step n-AlGaN layer B So, C Cheon, J Lee, J Lee, T Kwak, U Choi, JD Song, J Chang, O Nam Thin Solid Films 708, 138103, 2020 | 5 | 2020 |
| Effect on optical, structural and electrical properties by the AlGaN/AlGaN multi quantum wells with different well and barrier thicknesses T Kim, B So, J Lee, O Nam Thin Solid Films 680, 31-36, 2019 | 5 | 2019 |
| Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method B So, J Lee, C Cheon, J Lee, U Choi, M Kim, J Song, J Chang, O Nam AIP Advances 11 (4), 2021 | 3 | 2021 |
