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Joris Gerhard Keizer
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Year
A two-qubit gate between phosphorus donor electrons in silicon
Y He, SK Gorman, D Keith, L Kranz, JG Keizer, MY Simmons
Nature 571 (7765), 371-375, 2019
3222019
Engineering topological states in atom-based semiconductor quantum dots
M Kiczynski, S Gorman, H Geng, M Donnely, Y Chung, Y He, J Keizer, ...
Nature 606, 694-699, 2022
972022
Two-electron spin correlations in precision placed donors in silicon
MA Broome, SK Gorman, MG House, SJ Hile, JG Keizer, D Keith, CD Hill, ...
Nature communications 9 (1), 980, 2018
892018
Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy
JG Keizer, J Bocquel, PM Koenraad, T Mano, T Noda, K Sakoda
Applied Physics Letters 96 (6), 2010
792010
Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor
M Koch, JG Keizer, P Pakkiam, D Keith, MG House, E Peretz, ...
Nature nanotechnology 14 (2), 137-140, 2019
732019
Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea
N Kleemans, J Van Bree, AO Govorov, JG Keizer, GJ Hamhuis, R Nötzel, ...
Nature Physics 6 (7), 534-538, 2010
702010
Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy
AD Giddings, JG Keizer, M Hara, GJ Hamhuis, H Yuasa, H Fukuzawa, ...
Physical Review B 83 (20), 205308, 2011
612011
A comparison of the physical properties of four new generation flexible ureteroscopes:(de) flection, flow properties, torsion stiffness, and optical characteristics
MLJE Paffen, JG Keizer, G Winter, AJ Arends, AJM Hendrikx
Journal of endourology 22 (10), 2227-2234, 2008
562008
Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon
L Kranz, SK Gorman, B Thorgrimsson, Y He, D Keith, JG Keizer, ...
Advanced Materials 32 (40), 2003361, 2020
552020
High-fidelity single-shot singlet-triplet readout of precision-placed donors in silicon
MA Broome, TF Watson, D Keith, SK Gorman, MG House, JG Keizer, ...
Physical review letters 119 (4), 046802, 2017
552017
Observation and explanation of strong electrically tunable exciton factors in composition engineered In(Ga)As quantum dots
V Jovanov, T Eissfeller, S Kapfinger, EC Clark, F Klotz, M Bichler, ...
Physical Review B 83 (16), 161303, 2011
482011
Suppressing segregation in highly phosphorus doped silicon monolayers
JG Keizer, S Koelling, PM Koenraad, MY Simmons
ACS nano 9 (12), 12537-12541, 2015
442015
Addressable electron spin resonance using donors and donor molecules in silicon
SJ Hile, L Fricke, MG House, E Peretz, CY Chen, Y Wang, M Broome, ...
Science advances 4 (7), eaaq1459, 2018
432018
Benchmarking high fidelity single-shot readout of semiconductor qubits
D Keith, SK Gorman, L Kranz, Y He, JG Keizer, MA Broome, MY Simmons
New Journal of Physics 21 (6), 063011, 2019
392019
Low resistivity, super-saturation phosphorus-in-silicon monolayer doping
SR McKibbin, CM Polley, G Scappucci, JG Keizer, MY Simmons
Applied Physics Letters 104 (12), 2014
382014
Coherent control of a donor-molecule electron spin qubit in silicon
L Fricke, SJ Hile, L Kranz, Y Chung, Y He, P Pakkiam, MG House, ...
Nature communications 12 (1), 3323, 2021
372021
Precise shape engineering of epitaxial quantum dots by growth kinetics
S Bietti, J Bocquel, S Adorno, T Mano, JG Keizer, PM Koenraad, ...
Physical Review B 92 (7), 075425, 2015
372015
InAs quantum dot morphology after capping with In, N, Sb alloyed thin films
JG Keizer, JM Ulloa, AD Utrilla, PM Koenraad
Applied Physics Letters 104 (5), 2014
342014
Highly nonlinear excitonic Zeeman spin splitting in composition-engineered artificial atoms
V Jovanov, T Eissfeller, S Kapfinger, EC Clark, F Klotz, M Bichler, ...
Physical Review B 85 (16), 165433, 2012
332012
Single-charge detection by an atomic precision tunnel junction
MG House, E Peretz, JG Keizer, SJ Hile, MY Simmons
Applied Physics Letters 104 (11), 2014
272014
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Articles 1–20