| Deep depletion concept for diamond MOSFET TT Pham, N Rouger, C Masante, G Chicot, F Udrea, D Eon, E Gheeraert, ... Applied Physics Letters 111 (17), 2017 | 59 | 2017 |
| High lateral breakdown voltage in thin channel AlGaN/GaN high electron mobility transistors on AlN/Sapphire templates I Abid, R Kabouche, C Bougerol, J Pernot, C Masante, R Comyn, ... Micromachines 10 (10), 690, 2019 | 37 | 2019 |
| Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors C Masante, N Rouger, J Pernot Journal of Physics D: Applied Physics 54 (23), 233002, 2021 | 30 | 2021 |
| 200V, 4MV/cm lateral diamond MOSFET TT Pham, J Pernot, C Masante, D Eon, E Gheeraert, G Chicot, F Udrea, ... 2017 IEEE International Electron Devices Meeting (IEDM), 25.4. 1-25.4. 4, 2017 | 27 | 2017 |
| High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication TT Pham, M Gutiérrez, C Masante, N Rouger, D Eon, E Gheeraert, ... Applied Physics Letters 112 (10), 2018 | 25 | 2018 |
| 175V, > 5.4 MV/cm, at 250°C Diamond MOSFET and its reverse conduction C Masante, J Pernot, J Letellier, D Eon, N Rouger 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 22 | 2019 |
| Gate oxide electrical stability of p-type diamond MOS capacitors O Loto, M Florentin, C Masante, N Donato, ML Hicks, AC Pakpour-Tabrizi, ... IEEE Transactions on Electron Devices 65 (8), 3361-3364, 2018 | 20 | 2018 |
| Non‐Volatile Photo‐Switch Using a Diamond pn Junction C Masante, M Kah, C Hébert, N Rouger, J Pernot Advanced Electronic Materials 8 (1), 2100542, 2022 | 9 | 2022 |
| High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors J Cañas, C Dussarrat, T Teramoto, C Masante, M Gutierrez, E Gheeraert Applied Physics Letters 121 (7), 2022 | 6 | 2022 |
| High temperature operation of a monolithic bidirectional diamond switch C Masante, J Pernot, A Maréchal, N Rouger Diamond and Related Materials 111, 108185, 2021 | 5 | 2021 |
| Commutation time of non-volatile photo-switch based on diamond junction field effect transistor M Kah, C Masante, F Donatini, G Jacopin, NC Rouger, J Pernot 15th International Conference on New Diamond and Nano Carbons NDNC 2022, 2022 | 2 | 2022 |
| Transistors MOS en diamant pour l'électronique de puissance C Masante Université Grenoble Alpes (ComUE), 2019 | 2 | 2019 |
| Diamond devices for power electronics N Rouger, TT Pham, G Perez, M Cédric, P Lefranc, PO Jeannin 11th conference on new diamond and nano carbons (Internet). Cairns …, 2017 | 2 | 2017 |
| Wide bandgap material transfer as a flagship technology for future high power devices J Widiez, G Gelineau, C Masante, J Chretien, A Moulin, V Prudkovskiy, ... 2023 MRS Fall-2023 MRS Fall Meeting and Exhibit, 2023 | 1 | 2023 |
| Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique C Masante, J de Vecchy, F Mazen, F Milesi, L Di Cioccio, J Pernot, ... Diamond and Related Materials 126, 109085, 2022 | 1 | 2022 |
| Diamond MOSFET for power electronics C Masante Université Grenoble Alpes, 2019 | 1 | 2019 |
| Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture C Leurquin, W Vandendaele, MA Jaud, R Lavieville, B Mohamad, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Processing and electrical characterization of SiC-on-Insulator structures G Gelineau, C Masante, E Rolland, S Barbet, L Corbin, A Andre, ... ICSCRM 2023-the International Conference on Silicon Carbide and Related …, 2023 | | 2023 |
| Method for transferring a useful layer of crystalline diamond onto a supporting substrate C Masante, L Le Van-Jodin, F Mazen, F Milesi US Patent App. 18/063,752, 2023 | | 2023 |
| Electrical characterization of 200 mm 4H-SiC-on-polycristalline SiC wafers bonding interface C Masante, JM Bethoux, G Gelineau, E Rolland, S Barbet, A Moulin, ... ICSCRM 2023, 2023 | | 2023 |
