Bianca Lim
Bianca Lim
Senior Research Fellow, Solar Energy Research Institute of Singapore
Verified email at nus.edu.sg
TitleCited byYear
Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon
D Macdonald, F Rougieux, A Cuevas, B Lim, J Schmidt, M Di Sabatino, ...
Journal of Applied Physics 105 (9), 093704, 2009
1512009
Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions
U Römer, R Peibst, T Ohrdes, B Lim, J Krügener, E Bugiel, T Wietler, ...
Solar Energy Materials and Solar Cells 131, 85-91, 2014
1042014
Hot spots in multicrystalline silicon solar cells: avalanche breakdown due to etch pits
J Bauer, JM Wagner, A Lotnyk, H Blumtritt, B Lim, J Schmidt, ...
physica status solidi (RRL)-Rapid Research Letters 3 (2‐3), 40-42, 2009
842009
Generation and annihilation of boron–oxygen-related recombination centers in compensated p-and n-type silicon
B Lim, F Rougieux, D Macdonald, K Bothe, J Schmidt
American Institute of Physics (AIP), 2010
812010
Ion implantation for poly-Si passivated back-junction back-contacted solar cells
U Römer, R Peibst, T Ohrdes, B Lim, J Krügener, T Wietler, R Brendel
IEEE Journal of Photovoltaics 5 (2), 507-514, 2015
782015
Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature
B Lim, K Bothe, J Schmidt
physica status solidi (RRL)-Rapid Research Letters 2 (3), 93-95, 2008
692008
A Simple Model Describing the Symmetric Characteristics of Polycrystalline Si/Monocrystalline Si, and Polycrystalline Si/Monocrystalline Si Junctions
R Peibst, U Römer, KR Hofmann, B Lim, TF Wietler, J Krügener, ...
IEEE Journal of Photovoltaics 4 (3), 841-850, 2014
60*2014
Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon
DC Walter, B Lim, K Bothe, VV Voronkov, R Falster, J Schmidt
Applied Physics Letters 104 (4), 042111, 2014
582014
Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon
FE Rougieux, D Macdonald, A Cuevas, S Ruffell, J Schmidt, B Lim, ...
Journal of Applied Physics 108 (1), 013706, 2010
582010
Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon
VV Voronkov, R Falster, K Bothe, B Lim, J Schmidt
journal of applied physics 110 (6), 063515, 2011
572011
Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon
B Lim, A Liu, D Macdonald, K Bothe, J Schmidt
Applied Physics Letters 95 (23), 232109, 2009
452009
Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon
FE Rougieux, B Lim, J Schmidt, M Forster, D Macdonald, A Cuevas
Journal of Applied Physics 110 (6), 063708, 2011
422011
Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime
AL Blum, JS Swirhun, RA Sinton, F Yan, S Herasimenka, T Roth, K Lauer, ...
IEEE Journal of Photovoltaics 4 (1), 525-531, 2014
392014
Impact of oxygen on the permanent deactivation of boron–oxygen-related recombination centers in crystalline silicon
B Lim, K Bothe, J Schmidt
Journal of Applied Physics 107 (12), 123707, 2010
382010
Lifetimes exceeding 1ms in 1-Ωcm boron-doped Cz-silicon
DC Walter, B Lim, K Bothe, R Falster, VV Voronkov, J Schmidt
Solar Energy Materials and Solar Cells 131, 51-57, 2014
342014
Recombination via point defects and their complexes in solar silicon
AR Peaker, VP Markevich, B Hamilton, G Parada, A Dudas, A Pap, E Don, ...
physica status solidi (a) 209 (10), 1884-1893, 2012
332012
Carrier mobilities in multicrystalline silicon wafers made from UMG‐Si
B Lim, M Wolf, J Schmidt
physica status solidi (c) 8 (3), 835-838, 2011
302011
The impact of dopant compensation on the boron–oxygen defect in p‐and n‐type crystalline silicon
D MacDonald, A Liu, A Cuevas, B Lim, J Schmidt
Physica status solidi (a) 208 (3), 559-563, 2011
292011
Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron–oxygen complexes via a hole-emitting process
B Lim, VV Voronkov, R Falster, K Bothe, J Schmidt
Applied Physics Letters 98 (16), 162104, 2011
262011
Realistic efficiency potential of next‐generation industrial Czochralski‐grown silicon solar cells after deactivation of the boron–oxygen‐related defect center
DC Walter, B Lim, J Schmidt
Progress in Photovoltaics: Research and Applications, 2016
252016
The system can't perform the operation now. Try again later.
Articles 1–20