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Mohana Rajpalke
Mohana Rajpalke
Senior Researcher at Microsoft, Copenhagen
Bestätigte E-Mail-Adresse bei microsoft.com
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Zitiert von
Zitiert von
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Growth and properties of GaSbBi alloys
MK Rajpalke, WM Linhart, M Birkett, KM Yu, DO Scanlon, J Buckeridge, ...
Applied Physics Letters 103 (14), 2013
1002013
InAs-Al hybrid devices passing the topological gap protocol
M Aghaee, A Akkala, Z Alam, R Ali, AA Ramirez, M Andrzejczuk, ...
Physical Review B 107 (24), 245423, 2023
892023
Binary group III-nitride based heterostructures: band offsets and transport properties
B Roul, M Kumar, MK Rajpalke, TN Bhat, SB Krupanidhi
Journal of Physics D: Applied Physics 48 (42), 423001, 2015
782015
High Bi content GaSbBi alloys
MK Rajpalke, WM Linhart, M Birkett, KM Yu, J Alaria, J Kopaczek, ...
Journal of applied physics 116 (4), 2014
772014
Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires
EA Anyebe, MK Rajpalke, TD Veal, CJ Jin, ZM Wang, QD Zhuang
Nano Research 8, 1309-1319, 2015
722015
Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy
QD Zhuang, EA Anyebe, R Chen, H Liu, AM Sanchez, MK Rajpalke, ...
Nano Letters 15 (2), 1109-1116, 2015
622015
Bi-induced band gap reduction in epitaxial InSbBi alloys
MK Rajpalke, WM Linhart, KM Yu, M Birkett, J Alaria, JJ Bomphrey, ...
Applied Physics Letters 105 (21), 2014
622014
Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films
B Roul, MK Rajpalke, TN Bhat, M Kumar, AT Kalghatgi, SB Krupanidhi, ...
Applied Physics Letters 99 (16), 2011
542011
Theoretical and experimental studies of electronic band structure for GaSb1− xBix in the dilute Bi regime
MP Polak, P Scharoch, R Kudrawiec, J Kopaczek, MJ Winiarski, ...
Journal of Physics D: Applied Physics 47 (35), 355107, 2014
532014
Temperature dependence of the band gap of GaSb1− xBix alloys with 0< x≤ 0.042 determined by photoreflectance
J Kopaczek, R Kudrawiec, WM Linhart, MK Rajpalke, KM Yu, TS Jones, ...
Applied Physics Letters 103 (26), 2013
472013
Realization of vertically aligned, ultrahigh aspect ratio InAsSb nanowires on graphite
EA Anyebe, AM Sánchez, S Hindmarsh, X Chen, J Shao, MK Rajpalke, ...
Nano Letters 15 (7), 4348-4355, 2015
412015
Low-and high-energy photoluminescence from GaSb1− xBix with 0< x≤ 0.042
J Kopaczek, R Kudrawiec, W Linhart, M Rajpalke, T Jones, M Ashwin, ...
Applied Physics Express 7 (11), 111202, 2014
352014
Bi flux-dependent MBE growth of GaSbBi alloys
MK Rajpalke, WM Linhart, KM Yu, TS Jones, MJ Ashwin, TD Veal
Journal of Crystal Growth 425, 241-244, 2015
332015
Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
M Kumar, TN Bhat, MK Rajpalke, B Roul, AT Kalghatgi, SB Krupanidhi
Nanoscale research letters 6, 1-6, 2011
302011
Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE
M Kumar, B Roul, TN Bhat, MK Rajpalke, P Misra, LM Kukreja, N Sinha, ...
Materials Research Bulletin 45 (11), 1581-1585, 2010
292010
Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy
TN Bhat, MK Rajpalke, B Roul, M Kumar, SB Krupanidhi
Journal of Applied Physics 110 (9), 2011
282011
Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer
AL Mulyo, MK Rajpalke, H Kuroe, PE Vullum, H Weman, BO Fimland, ...
Nanotechnology 30 (1), 015604, 2018
272018
Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
B Roul, MK Rajpalke, TN Bhat, M Kumar, N Sinha, AT Kalghatgi, ...
Journal of Applied Physics 109 (4), 044502-044502-5, 2011
272011
Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE
M Kumar, MK Rajpalke, TN Bhat, B Roul, N Sinha, AT Kalghatgi, ...
Materials letters 65 (9), 1396-1399, 2011
262011
Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors
EA Anyebe, I Sandall, ZM Jin, AM Sanchez, MK Rajpalke, TD Veal, ...
Scientific reports 7 (1), 46110, 2017
232017
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