| Influence of GaN stress on threshold voltage shift in AlGaN/GaN high-electron-mobility transistors on Si under off-state electrical bias AF Wilson, A Wakejima, T Egawa Applied physics express 6 (8), 086504, 2013 | 26 | 2013 |
| Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and PulsedMeasurements A Wakejima, AF Wilson, S Mase, T Joka, T Egawa IEEE transactions on electron devices 60 (10), 3183-3189, 2013 | 24 | 2013 |
| Step-stress reliability studies on AlGaN/GaN high electron mobility transistors on silicon with buffer thickness dependence AF Wilson, A Wakejima, T Egawa Applied Physics Express 6 (5), 056501, 2013 | 16 | 2013 |
| A HEMT amplifier for NRD guide integrated circuit A Wilson The 3rd Asia-Pacific Microwave Conference, Tokyo, Japan, 1990, 147-150, 1990 | 7 | 1990 |
| Origin and appearance of defective pits in the gate–drain region during reliability measurements of AlGaN/GaN high-electron-mobility transistors on Si AF Wilson, A Wakejima, T Egawa Applied Physics Express 6 (11), 116601, 2013 | 5 | 2013 |
| Influence of chamber pressure on the crystal quality of homo-epitaxial GaN grown by radical-enhanced MOCVD (REMOCVD) FW Amalraj, N Shimizu, O Oda, K Ishikawa, M Hori Journal of Crystal Growth 549, 125863, 2020 | 4 | 2020 |
| Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition Y Isobe, T Sakai, N Sugiyama, I Mizushima, K Suguro, N Miyashita, Y Lu, ... Journal of Vacuum Science & Technology B 37 (3), 2019 | 4 | 2019 |
| Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) FW Amalraj, AK Dhasiyan, Y Lu, N Shimizu, O Oda, K Ishikawa, H Kondo, ... AIP Advances 8 (11), 2018 | 4 | 2018 |
| Simulation-aided design of very-high-frequency excited nitrogen plasma confinement using a shield plate Y Isobe, T Sakai, K Suguro, N Miyashita, H Kondo, K Ishikawa, AF Wilson, ... Journal of Vacuum Science & Technology B 37 (6), 2019 | 2 | 2019 |
| Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD … AK Dhasiyan, S Jayaprasad, FW Amalraj, N Shimizu, O Oda, K Ishikawa, ... Japanese Journal of Applied Physics 62 (SN), SN1019, 2023 | | 2023 |
| Surface Treatment Method of GaN Substrates for Homoepitaxial GaN Growth by REMOCVD FW Amalraj, AK Dhasiyan, N Shimizu, O Oda, H Kondo, K Ishikawa, ... JSAP Annual Meetings Extended Abstracts The 79th JSAP Autumn Meeting 2018 …, 2018 | | 2018 |
| Effects of in-situ irradiation of nitrogen-hydrogen plasma on flatness and composition of GaN surfaces before epitaxial growth by a radical-enhanced metalorganic chemical vapor … H Kondo, AF Wilson, DA Kumar, Y Lu, N Shimizu, O Oda, K Ishikawa, ... APS Annual Gaseous Electronics Meeting Abstracts, TF2. 002, 2018 | | 2018 |
| Reliability Studies on MOCVD Grown AlGaN/GaN HEMT on Si Substrate F Wilson Amalraj 名古屋工業大学, 2014 | | 2014 |
| Step stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence WA Frank, W Akio, E Takashi 電子情報通信学会技術研究報告. ED, 電子デバイス 111 (373), 87-90, 2012 | | 2012 |
| Step-stress Reliability Studies on AlGaN/GaN HEMTs on Siliconwith Buffer Thickness Dependence AF WILSON Solid State Device Meeting Dig., 2011 632, 2011 | | 2011 |
| Effect of Buffer Thickness on Degradation of AlGaN/GaN HEMTs on Si AF Wilson, A Wakejima, T Egawa | | |
Hiroki KondoNagoya UniversityVerified email at nagoya-u.jp
Hiroki KondoNagoya UniversityVerified email at nagoya-u.jp