John D. Murphy
John D. Murphy
Professor, School of Engineering, University of Warwick
Verified email at warwick.ac.uk - Homepage
Title
Cited by
Cited by
Year
Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
JD Murphy, K Bothe, R Krain, VV Voronkov, RJ Falster
Journal of Applied Physics 111 (11), 113709, 2012
852012
Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
JD Murphy, RE McGuire, K Bothe, VV Voronkov, RJ Falster
Solar Energy Materials and Solar Cells, 2013
712013
The effect of oxide precipitates on minority carrier lifetime in p-type silicon
JD Murphy, K Bothe, M Olmo, VV Voronkov, RJ Falster
Journal of Applied Physics 110 (5), 053713, 2011
612011
Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
T Niewelt, M Selinger, NE Grant, W Kwapil, JD Murphy, MC Schubert
Journal of Applied Physics 121 (18), 185702, 2017
512017
Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films
AY Liu, C Sun, VP Markevich, AR Peaker, JD Murphy, D Macdonald
Journal of Applied Physics 120 (19), 193103, 2016
452016
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ...
physica status solidi (a) 213 (11), 2844-2849, 2016
432016
Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime
AL Blum, JS Swirhun, RA Sinton, F Yan, S Herasimenka, T Roth, K Lauer, ...
IEEE Journal of Photovoltaics 4 (1), 525-531, 2014
412014
Contamination of silicon by iron at temperatures below 800° C
JD Murphy, RJ Falster
physica status solidi (RRL)-Rapid Research Letters 5 (10‐11), 370-372, 2011
402011
The mechanical properties of tungsten grown by chemical vapour deposition
JD Murphy, A Giannattasio, Z Yao, CJD Hetherington, PD Nellist, ...
Journal of Nuclear Materials 386, 583-586, 2009
342009
The effect of oxide precipitates on minority carrier lifetime in n-type silicon
JD Murphy, M Al-Amin, K Bothe, M Olmo, VV Voronkov, RJ Falster
Journal of Applied Physics 118 (21), 215706, 2015
332015
The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750° C
JD Murphy, RJ Falster
Journal of Applied Physics 112 (11), 113506, 2012
332012
Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
K Bothe, RJ Falster, JD Murphy
Applied Physics Letters 101 (3), 032107, 2012
322012
Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon
FE Rougieux, NE Grant, C Barugkin, D Macdonald, JD Murphy
IEEE Journal of Photovoltaics 5 (2), 495-498, 2014
302014
Nitrogen diffusion and interaction with dislocations in single-crystal silicon
CR Alpass, JD Murphy, RJ Falster, PR Wilshaw
Journal of Applied Physics 105 (1), 013519, 2009
282009
Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cells
T Rahman, A To, ME Pollard, NE Grant, J Colwell, DNR Payne, ...
Progress in Photovoltaics: Research and Applications 26 (1), 38-47, 2018
272018
Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
A Giannattasio, JD Murphy, S Senkader, RJ Falster, PR Wilshaw
Journal of The Electrochemical Society 152 (6), G460-G467, 2005
272005
Nanoindentation and micromechanical testing of iron-chromium alloys implanted with iron ions
FM Halliday, DEJ Armstrong, JD Murphy, SG Roberts
Advanced Materials Research 59, 304-307, 2009
262009
Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering
M Al-Amin, JD Murphy
Journal of Applied Physics 119 (23), 235704, 2016
252016
The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
Z Zeng, JD Murphy, RJ Falster, X Ma, D Yang, PR Wilshaw
Journal of Applied Physics 109 (6), 063532, 2011
252011
Temporary surface passivation for characterisation of bulk defects in silicon: a review
NE Grant, JD Murphy
physica status solidi (RRL)–Rapid Research Letters 11 (11), 1700243, 2017
232017
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Articles 1–20