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Tejas Naphade
Tejas Naphade
Verified email at iitb.ac.in
Title
Cited by
Cited by
Year
Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress
N Goel, T Naphade, S Mahapatra
2015 IEEE International Reliability Physics Symposium, 4A. 3.1-4A. 3.7, 2015
492015
Investigation of stochastic implementation of reaction diffusion (RD) models for NBTI related interface trap generation
T Naphade, N Goel, PR Nair, S Mahapatra
Reliability Physics Symposium (IRPS), 2013 IEEE International, XT. 5.1-XT. 5.11, 2013
292013
Design and analysis of layered coarse-grained reconfigurable architecture
ZE Rákossy, T Naphade, A Chattopadhyay
Reconfigurable Computing and FPGAs (ReConFig), 2012 International Conference …, 2012
272012
A novel physics-based variable NBTI simulation framework from small area devices to 6T-SRAM
T Naphade, K Roy, S Mahapatra
Electron Devices Meeting (IEDM), 2013 IEEE International, 33.6. 1-33.6. 4, 2013
242013
DC/AC BTI variability of SRAM circuits simulated using a physics-based compact model
T Naphade, P Verma, N Goel, S Mahapatra
2014 IEEE International Reliability Physics Symposium, CA. 2.1-CA. 2.8, 2014
112014
Modeling of stochastic BTI in small area devices and its impact on SRAM performance
T Naphade, S Mahapatra
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on, 1-4, 2014
12014
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Articles 1–6