Bram Hoex
Bram Hoex
Professor, UNSW Sydney
Verified email at - Homepage
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Cited by
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
B Hoex, SBS Heil, E Langereis, MCM Van de Sanden, WMM Kessels
Applied physics letters 89 (4), 2006
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
B Hoex, JJH Gielis, MCM Van de Sanden, WMM Kessels
Journal of Applied physics 104 (11), 2008
Silicon surface passivation by atomic layer deposited Al2O3
B Hoex, J Schmidt, P Pohl, MCM Van de Sanden, WMM Kessels
Journal of Applied Physics 104 (4), 2008
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3
J Schmidt, A Merkle, R Brendel, B Hoex, MCM de Sanden, WMM Kessels
Progress in photovoltaics: research and applications 16 (6), 461-466, 2008
Black silicon: fabrication methods, properties and solar energy applications
X Liu, PR Coxon, M Peters, B Hoex, JM Cole, DJ Fray
Energy & Environmental Science 7 (10), 3223-3263, 2014
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ...
Applied Physics Letters 91 (11), 2007
High efficiency n-type Si solar cells on Al2O3-passivated boron emitters
J Benick, B Hoex, MCM Van De Sanden, WMM Kessels, O Schultz, ...
Applied Physics Letters 92 (25), 2008
Dielectric surface passivation for silicon solar cells: A review
RS Bonilla, B Hoex, P Hamer, PR Wilshaw
physica status solidi (a) 214 (7), 1700293, 2017
Stability of Al2O3 and Al2O3/a-SiNx: H stacks for surface passivation of crystalline silicon
G Dingemans, P Engelhart, R Seguin, F Einsele, B Hoex, ...
Journal of Applied Physics 106 (11), 2009
Optimised antireflection coatings using silicon nitride on textured silicon surfaces based on measurements and multidimensional modelling
S Duttagupta, F Ma, B Hoex, T Mueller, AG Aberle
Energy procedia 15, 78-83, 2012
Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation
JJH Gielis, B Hoex, MCM Van De Sanden, WMM Kessels
Journal of Applied Physics 104 (7), 2008
Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide
B Liao, B Hoex, AG Aberle, D Chi, CS Bhatia
Applied Physics Letters 104 (25), 2014
A fill factor loss analysis method for silicon wafer solar cells
A Khanna, T Mueller, RA Stangl, B Hoex, PK Basu, AG Aberle
IEEE Journal of Photovoltaics 3 (4), 1170-1177, 2013
Cd-Free Cu 2 ZnSnS 4 solar cell with an efficiency greater than 10% enabled by Al 2 O 3 passivation layers
X Cui, K Sun, J Huang, JS Yun, CY Lee, C Yan, H Sun, Y Zhang, C Xue, ...
Energy & environmental science 12 (9), 2751-2764, 2019
Surface passivation of phosphorus‐diffused n+‐type emitters by plasma‐assisted atomic‐layer deposited Al2O3
B Hoex, MCM Van de Sanden, J Schmidt, R Brendel, WMM Kessels
physica status solidi (RRL)–Rapid Research Letters 6 (1), 4-6, 2012
Broken metal fingers in silicon wafer solar cells and PV modules
P Chaturvedi, B Hoex, TM Walsh
Solar Energy Materials and Solar Cells 108, 78-81, 2013
The role of hydrogenation and gettering in enhancing the efficiency of next‐generation Si solar cells: An industrial perspective
B Hallam, D Chen, M Kim, B Stefani, B Hoex, M Abbott, S Wenham
physica status solidi (a) 214 (7), 1700305, 2017
Absolute densities of N and excited in a plasma
S Agarwal, B Hoex, MCM Van de Sanden, D Maroudas, ES Aydil
Applied physics letters 83 (24), 4918-4920, 2003
Acceleration and mitigation of carrier‐induced degradation in p‐type multi‐crystalline silicon
DNR Payne, CE Chan, BJ Hallam, B Hoex, MD Abbott, SR Wenham, ...
physica status solidi (RRL)–Rapid Research Letters 10 (3), 237-241, 2016
Sign reversal of spin polarization in C o/R u/A l 2 O 3/Co magnetic tunnel junctions
P LeClair, B Hoex, H Wieldraaijer, JT Kohlhepp, HJM Swagten, ...
Physical Review B 64 (10), 100406, 2001
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