Maxime Forster
Maxime Forster
Apollonsolar
Verified email at anu.edu.au - Homepage
Title
Cited by
Cited by
Year
Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron
M Forster, E Fourmond, FE Rougieux, A Cuevas, R Gotoh, K Fujiwara, ...
Applied Physics Letters 100 (4), 042110, 2012
552012
Towards a unified low-field model for carrier mobilities in crystalline silicon
F Schindler, M Forster, J Broisch, J Schön, J Giesecke, S Rein, W Warta, ...
Solar Energy Materials and Solar Cells 131, 92-99, 2014
472014
Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon
FE Rougieux, B Lim, J Schmidt, M Forster, D Macdonald, A Cuevas
Journal of Applied Physics 110 (6), 063708, 2011
462011
Electrical properties of boron, phosphorus and gallium co-doped silicon
E Fourmond, M Forster, R Einhaus, H Lauvray, J Kraiem, M Lemiti
Energy Procedia 8, 349-354, 2011
332011
Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications
M Forster, E Fourmond, R Einhaus, H Lauvray, J Kraiem, M Lemiti
physica status solidi c 8 (3), 678-681, 2011
312011
From simulation to experiment: Understanding BO-regeneration kinetics
S Wilking, M Forster, A Herguth, G Hahn
Solar Energy Materials and Solar Cells 142, 87-91, 2015
302015
High efficiency UMG silicon solar cells: impact of compensation on cell parameters
F Rougieux, C Samundsett, KC Fong, A Fell, P Zheng, D Macdonald, ...
Progress in Photovoltaics: Research and Applications 24 (5), 725-734, 2016
292016
Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells
M Forster, P Wagner, J Degoulange, R Einhaus, G Galbiati, FE Rougieux, ...
Solar energy materials and solar cells 120, 390-395, 2014
292014
Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon
M Forster, A Cuevas, E Fourmond, FE Rougieux, M Lemiti
Journal of Applied Physics 111 (4), 043701, 2012
262012
Recombination activity and impact of the boron–oxygen-related defect in compensated n-type silicon
FE Rougieux, M Forster, D MacDonald, A Cuevas, B Lim, J Schmidt
IEEE Journal of Photovoltaics 1 (1), 54-58, 2011
232011
Incomplete ionization and carrier mobility in compensated p-type and n-type silicon
M Forster, FE Rougieux, A Cuevas, B Dehestru, A Thomas, E Fourmond, ...
IEEE Journal of Photovoltaics 3 (1), 108-113, 2012
202012
Applications of photoluminescence imaging to dopant and carrier concentration measurements of silicon wafers
SY Lim, M Forster, X Zhang, J Holtkamp, MC Schubert, A Cuevas, ...
IEEE Journal of Photovoltaics 3 (2), 649-655, 2012
172012
Compensation engineering for silicon solar cells
A Cuevas, M Forster, F Rougieux, D Macdonald
Energy Procedia 15, 67-77, 2012
142012
Compensation engineering for uniform n-type silicon ingots
M Forster, B Dehestru, A Thomas, E Fourmond, R Einhaus, A Cuevas, ...
Solar energy materials and solar cells 111, 146-152, 2013
92013
19% efficiency heterojunction solar cells on Cz wafers from non-blended upgraded metallurgical silicon
R Einhaus, J Kraiem, J Degoulange, O Nichiporuk, M Forster, P Papet, ...
2012 38th IEEE Photovoltaic Specialists Conference, 003234-003237, 2012
92012
Lifetime degradation on n-type wafers with boron-diffused and SiO2/SiN-passivated surface
C Renevier, E Fourmond, M Forster, S Parola, M Le Coz, E Picard
Energy Procedia 55, 280-286, 2014
82014
Compensation engineering for silicon solar cells
M Forster
62012
Status of Solid Oxide Fuel Cell Development at Forschungszentrum Jülich
NH Menzler, L Blum, HP Buchkremer, SM Gro, LGJ De Haart, ...
Procedia Engineering, 407-408, 2012
62012
Doping engineering to increase the material yield during crystallization of B and P compensated silicon
M Forster, E Fourmond, R Einhaus, H Lauvray, J Kraiem, M Lemiti
62010
Donor-acceptor pair luminescence in B and P compensated Si co-doped with Ga
M Tajima, K Tanaka, M Forster, H Toyota, A Ogura
Journal of Applied Physics 113 (24), 243701, 2013
52013
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Articles 1–20