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Michael Dudley
Michael Dudley
Stony Brook Univ., Univ. of Warwick, Strathclyde Univ., Université Pierre et Marie Curie (Paris 6)
Verified email at stonybrook.edu
Title
Cited by
Cited by
Year
Springer handbook of crystal growth
G Dhanaraj, K Byrappa, V Prasad, M Dudley
Springer, 2010
5322010
Fabrication and characterization of polycrystalline WO3 nanofibers and their application for ammonia sensing
G Wang, Y Ji, X Huang, X Yang, PI Gouma, M Dudley
The Journal of Physical Chemistry B 110 (47), 23777-23782, 2006
3032006
Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (< 250 V) 4H-SiC p(+)n junction diodes - Part I: DC properties
PG Neudeck, W Huang, M Dudley
IEEE TRANSACTIONS ON ELECTRON DEVICES 46 (3), 478-484, 1999
239*1999
The mechanism of micropipe nucleation at inclusions in silicon carbide
M Dudley, XR Huang, W Huang, A Powell, S Wang, P Neudeck, ...
Applied physics letters 75 (6), 784-786, 1999
1691999
Seeded growth of AlN bulk crystals in m-and c-orientation
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ...
Journal of Crystal Growth 312 (1), 58-63, 2009
1672009
Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+ n junction rectifiers
PG Neudeck, W Huang, M Dudley
MRS Online Proceedings Library (OPL) 483, 285, 1997
1601997
Direct evidence of micropipe-related pure superscrew dislocations in SiC
XR Huang, M Dudley, WM Vetter, W Huang, S Wang, CH Carter Jr
Applied physics letters 74 (3), 353-355, 1999
1551999
White-beam synchrotron topographic studies of defects in 6H-SiC single crystals
M Dudley, S Wang, W Huang, CH Carter Jr, VF Tsvetkov, C Fazi
Journal of Physics D: Applied Physics 28 (4A), A63, 1995
1511995
Reduction of threading dislocation densities in AlN∕ sapphire epilayers driven by growth mode modification
J Bai, M Dudley, WH Sun, HM Wang, MA Khan
Applied physics letters 88 (5), 2006
1322006
Recombination-enhanced defect motion in forward-biased 4H–SiC diodes
M Skowronski, JQ Liu, WM Vetter, M Dudley, C Hallin, H Lendenmann
Journal of applied physics 92 (8), 4699-4704, 2002
1302002
Report on the growth of bulk aluminum nitride and subsequent substrate preparation
JC Rojo, GA Slack, K Morgan, B Raghothamachar, M Dudley, ...
Journal of crystal growth 231 (3), 317-321, 2001
1292001
Study of the defect elimination mechanisms in aspect ratio trapping Ge growth
J Bai, JS Park, Z Cheng, M Curtin, B Adekore, M Carroll, A Lochtefeld, ...
Applied Physics Letters 90 (10), 2007
1262007
VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process
M Gurvitch, S Luryi, A Polyakov, A Shabalov, M Dudley, G Wang, S Ge, ...
Journal of Applied Physics 102 (3), 2007
1252007
Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image
XR Huang, M Dudley, WM Vetter, W Huang, W Si, CH Carter Jr
Journal of applied crystallography 32 (3), 516-524, 1999
1111999
Current status and emerging trends in wide bandgap (WBG) semiconductor power switching devices
K Shenai, M Dudley, RF Davis
ECS Journal of Solid State Science and Technology 2 (8), N3055, 2013
972013
X-ray characterization of bulk AIN single crystals grown by the sublimation technique
B Raghothamachar, M Dudley, JC Rojo, K Morgan, LJ Schowalter
Journal of Crystal Growth 250 (1-2), 244-250, 2003
932003
Nucleation of threading dislocations in sublimation grown silicon carbide
EK Sanchez, JQ Liu, M De Graef, M Skowronski, WM Vetter, M Dudley
Journal of applied physics 91 (3), 1143-1148, 2002
892002
Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+ a during the physical vapor transport growth of 4H–SiC
M Dudley, F Wu, H Wang, S Byrappa, B Raghothamachar, G Choi, S Sun, ...
Applied Physics Letters 98 (23), 2011
812011
Contribution of x-ray topography and high-resolution diffraction to the study of defects in SiC
M Dudley, XR Huang, WM Vetter
Journal of Physics D: Applied Physics 36 (10A), A30, 2003
812003
Growth kinetics and thermal stress in the sublimation growth of silicon carbide
R Ma, H Zhang, V Prasad, M Dudley
Crystal growth & design 2 (3), 213-220, 2002
802002
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