| Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films H Huang, KJ Winchester, A Suvorova, BR Lawn, Y Liu, XZ Hu, JM Dell, ... Materials Science and Engineering: A 435, 453-459, 2006 | 200 | 2006 |
| Scattering mechanisms limiting two-dimensional electron gas mobility in modulation-doped field-effect transistors J Antoszewski, M Gracey, JM Dell, L Faraone, TA Fisher, G Parish, YF Wu, ... Journal of Applied Physics 87 (8), 3900-3904, 2000 | 149 | 2000 |
| Widely tunable MEMS-based Fabry–Perot filter JS Milne, JM Dell, AJ Keating, L Faraone Journal of microelectromechanical systems 18 (4), 905-913, 2009 | 122 | 2009 |
| /sup 60/Co gamma irradiation effects on n-GaN Schottky diodes GA Umana-Membreno, JM Dell, G Parish, BD Nener, L Faraone, ... IEEE Transactions on Electron Devices 50 (12), 2326-2334, 2003 | 108 | 2003 |
| MEMS-based microspectrometer technologies for NIR and MIR wavelengths LP Schuler, JS Milne, JM Dell, L Faraone Journal of Physics D: Applied Physics 42 (13), 133001, 2009 | 93 | 2009 |
| Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry–Perot optical filters H Huang, K Winchester, Y Liu, XZ Hu, CA Musca, JM Dell, L Faraone Journal of micromechanics and microengineering 15 (3), 608, 2005 | 88 | 2005 |
| Monolithic integration of an infrared photon detector with a MEMS-based tunable filter CA Musca, J Antoszewski, KJ Winchester, AJ Keating, T Nguyen, K Silva, ... IEEE electron device letters 26 (12), 888-890, 2005 | 86 | 2005 |
| Tunable Fabry-Pérot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer KJ Winchester, JM Dell Journal of Micromechanics and Microengineering 11 (5), 589, 2001 | 75 | 2001 |
| HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology JM Dell, J Antoszewski, MH Rais, C Musca, JK White, BD Nener, ... Journal of Electronic Materials 29 (6), 841-848, 2000 | 75 | 2000 |
| gamma-irradiation-induced defects in GA Umana-Membreno, JM Dell, TP Hessler, BD Nener, G Parish, ... Applied physics letters 80 (23), 4354-4356, 2002 | 73 | 2002 |
| Nanoscratch-induced phase transformation of monocrystalline Si YQ Wu, H Huang, J Zou, LC Zhang, JM Dell Scripta Materialia 63 (8), 847-850, 2010 | 69 | 2010 |
| Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures Z Dziuba, J Antoszewski, JM Dell, L Faraone, P Kozodoy, S Keller, ... Journal of applied physics 82 (6), 2996-3002, 1997 | 64 | 1997 |
| Characterization of Hg 0.7 Cd 0.3 Te n-on p-type structures obtained by reactive ion etching induced p-to n conversion J Antoszewski, CA Musca, JM Dell, L Faraone Journal of Electronic materials 29 (6), 837-840, 2000 | 58 | 2000 |
| Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films M Martyniuk, J Antoszewski, CA Musca, JM Dell, L Faraone Smart Materials and Structures 15 (1), S29, 2005 | 57 | 2005 |
| GaSb: a new alternative substrate for epitaxial growth of HgCdTe W Lei, RJ Gu, J Antoszewski, J Dell, L Faraone Journal of electronic materials 43 (8), 2788-2794, 2014 | 49 | 2014 |
| Generation-recombination effects on dark currents in CdTe-passivated midwave infrared HgCdTe photodiodes A Jozwikowska, K Jozwikowski, J Antoszewski, CA Musca, T Nguyen, ... Journal of applied physics 98 (1), 014504, 2005 | 48 | 2005 |
| Quantifying the effects of 16p11. 2 copy number variants on brain structure: a multisite genetic-first study S Martin-Brevet, B Rodríguez-Herreros, JA Nielsen, C Moreau, ... Biological psychiatry 84 (4), 253-264, 2018 | 47 | 2018 |
| p-to-n type-conversion mechanisms for HgCdTe exposed to H 2/CH 4 plasmas J White, R Pal, JM Dell, CA Musca, J Antoszewski, L Faraone, P Burke Journal of electronic materials 30 (6), 762-767, 2001 | 45 | 2001 |
| Nanoscratch-induced deformation of single crystal silicon YQ Wu, H Huang, J Zou, JM Dell Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 44 | 2009 |
| Junction depth measurement in HgCdTe using laser beam induced current (LBIC) CA Musca, DA Redfern, EPG Smith, JM Dell, L Faraone, J Bajaj Journal of electronic materials 28 (6), 603-610, 1999 | 44 | 1999 |
Adrian KeatingThe University of Western AsutraliaVerified email at uwa.edu.au
