John Dell
John Dell
Executive Dean of Engineering and Mathematical Sciences, University of Western Australia
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Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films
H Huang, KJ Winchester, A Suvorova, BR Lawn, Y Liu, XZ Hu, JM Dell, ...
Materials Science and Engineering: A 435, 453-459, 2006
Scattering mechanisms limiting two-dimensional electron gas mobility in modulation-doped field-effect transistors
J Antoszewski, M Gracey, JM Dell, L Faraone, TA Fisher, G Parish, YF Wu, ...
Journal of Applied Physics 87 (8), 3900-3904, 2000
Widely tunable MEMS-based Fabry–Perot filter
JS Milne, JM Dell, AJ Keating, L Faraone
Journal of microelectromechanical systems 18 (4), 905-913, 2009
/sup 60/Co gamma irradiation effects on n-GaN Schottky diodes
GA Umana-Membreno, JM Dell, G Parish, BD Nener, L Faraone, ...
IEEE Transactions on Electron Devices 50 (12), 2326-2334, 2003
MEMS-based microspectrometer technologies for NIR and MIR wavelengths
LP Schuler, JS Milne, JM Dell, L Faraone
Journal of Physics D: Applied Physics 42 (13), 133001, 2009
Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry–Perot optical filters
H Huang, K Winchester, Y Liu, XZ Hu, CA Musca, JM Dell, L Faraone
Journal of Micromechanics and Microengineering 15 (3), 608, 2005
Monolithic integration of an infrared photon detector with a MEMS-based tunable filter
CA Musca, J Antoszewski, KJ Winchester, AJ Keating, T Nguyen, K Silva, ...
IEEE electron device letters 26 (12), 888-890, 2005
Nanoscratch-induced phase transformation of monocrystalline Si
YQ Wu, H Huang, J Zou, LC Zhang, JM Dell
Scripta Materialia 63 (8), 847-850, 2010
Tunable Fabry-Pérot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer
KJ Winchester, JM Dell
Journal of Micromechanics and Microengineering 11 (5), 589, 2001
gamma-irradiation-induced defects in
GA Umana-Membreno, JM Dell, TP Hessler, BD Nener, G Parish, ...
Applied physics letters 80 (23), 4354-4356, 2002
HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology
JM Dell, J Antoszewski, MH Rais, C Musca, JK White, BD Nener, ...
Journal of Electronic Materials 29 (6), 841-848, 2000
Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures
Z Dziuba, J Antoszewski, JM Dell, L Faraone, P Kozodoy, S Keller, ...
Journal of applied physics 82 (6), 2996-3002, 1997
Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films
M Martyniuk, J Antoszewski, CA Musca, JM Dell, L Faraone
Smart Materials and Structures 15 (1), S29, 2005
Quantifying the effects of 16p11. 2 copy number variants on brain structure: a multisite genetic-first study
S Martin-Brevet, B Rodríguez-Herreros, JA Nielsen, C Moreau, ...
Biological Psychiatry 84 (4), 253-264, 2018
Characterization of Hg0. 7Cd0. 3Te n-on p-type structures obtained by reactive ion etching induced p-to n conversion
J Antoszewski, CA Musca, JM Dell, L Faraone
Journal of Electronic materials 29 (6), 837-840, 2000
GaSb: A new alternative substrate for epitaxial growth of HgCdTe
W Lei, RJ Gu, J Antoszewski, J Dell, L Faraone
Journal of electronic materials 43 (8), 2788-2794, 2014
Generation-recombination effects on dark currents in CdTe-passivated midwave infrared HgCdTe photodiodes
A Jozwikowska, K Jozwikowski, J Antoszewski, CA Musca, T Nguyen, ...
Journal of applied physics 98 (1), 014504, 2005
Nanoscratch-induced deformation of single crystal silicon
YQ Wu, H Huang, J Zou, JM Dell
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
p-to-n type-conversion mechanisms for HgCdTe exposed to H2/CH4 plasmas
J White, R Pal, JM Dell, CA Musca, J Antoszewski, L Faraone, P Burke
Journal of electronic materials 30 (6), 762-767, 2001
Poisson's ratio of low-temperature PECVD silicon nitride thin films
BA Walmsley, Y Liu, XZ Hu, MB Bush, JM Dell, L Faraone
Journal of Microelectromechanical Systems 16 (3), 622-627, 2007
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