John Dell
John Dell
Executive Dean of Engineering and Mathematical Sciences, University of Western Australia
Verified email at uwa.edu.au
Title
Cited by
Cited by
Year
Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films
H Huang, KJ Winchester, A Suvorova, BR Lawn, Y Liu, XZ Hu, JM Dell, ...
Materials Science and Engineering: A 435, 453-459, 2006
2002006
Scattering mechanisms limiting two-dimensional electron gas mobility in modulation-doped field-effect transistors
J Antoszewski, M Gracey, JM Dell, L Faraone, TA Fisher, G Parish, YF Wu, ...
Journal of Applied Physics 87 (8), 3900-3904, 2000
1492000
Widely tunable MEMS-based Fabry–Perot filter
JS Milne, JM Dell, AJ Keating, L Faraone
Journal of microelectromechanical systems 18 (4), 905-913, 2009
1222009
/sup 60/Co gamma irradiation effects on n-GaN Schottky diodes
GA Umana-Membreno, JM Dell, G Parish, BD Nener, L Faraone, ...
IEEE Transactions on Electron Devices 50 (12), 2326-2334, 2003
1082003
MEMS-based microspectrometer technologies for NIR and MIR wavelengths
LP Schuler, JS Milne, JM Dell, L Faraone
Journal of Physics D: Applied Physics 42 (13), 133001, 2009
932009
Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry–Perot optical filters
H Huang, K Winchester, Y Liu, XZ Hu, CA Musca, JM Dell, L Faraone
Journal of micromechanics and microengineering 15 (3), 608, 2005
882005
Monolithic integration of an infrared photon detector with a MEMS-based tunable filter
CA Musca, J Antoszewski, KJ Winchester, AJ Keating, T Nguyen, K Silva, ...
IEEE electron device letters 26 (12), 888-890, 2005
862005
Tunable Fabry-Pérot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer
KJ Winchester, JM Dell
Journal of Micromechanics and Microengineering 11 (5), 589, 2001
752001
HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology
JM Dell, J Antoszewski, MH Rais, C Musca, JK White, BD Nener, ...
Journal of Electronic Materials 29 (6), 841-848, 2000
752000
gamma-irradiation-induced defects in
GA Umana-Membreno, JM Dell, TP Hessler, BD Nener, G Parish, ...
Applied physics letters 80 (23), 4354-4356, 2002
732002
Nanoscratch-induced phase transformation of monocrystalline Si
YQ Wu, H Huang, J Zou, LC Zhang, JM Dell
Scripta Materialia 63 (8), 847-850, 2010
692010
Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures
Z Dziuba, J Antoszewski, JM Dell, L Faraone, P Kozodoy, S Keller, ...
Journal of applied physics 82 (6), 2996-3002, 1997
641997
Characterization of Hg 0.7 Cd 0.3 Te n-on p-type structures obtained by reactive ion etching induced p-to n conversion
J Antoszewski, CA Musca, JM Dell, L Faraone
Journal of Electronic materials 29 (6), 837-840, 2000
582000
Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films
M Martyniuk, J Antoszewski, CA Musca, JM Dell, L Faraone
Smart Materials and Structures 15 (1), S29, 2005
572005
GaSb: a new alternative substrate for epitaxial growth of HgCdTe
W Lei, RJ Gu, J Antoszewski, J Dell, L Faraone
Journal of electronic materials 43 (8), 2788-2794, 2014
492014
Generation-recombination effects on dark currents in CdTe-passivated midwave infrared HgCdTe photodiodes
A Jozwikowska, K Jozwikowski, J Antoszewski, CA Musca, T Nguyen, ...
Journal of applied physics 98 (1), 014504, 2005
482005
Quantifying the effects of 16p11. 2 copy number variants on brain structure: a multisite genetic-first study
S Martin-Brevet, B Rodríguez-Herreros, JA Nielsen, C Moreau, ...
Biological psychiatry 84 (4), 253-264, 2018
472018
p-to-n type-conversion mechanisms for HgCdTe exposed to H 2/CH 4 plasmas
J White, R Pal, JM Dell, CA Musca, J Antoszewski, L Faraone, P Burke
Journal of electronic materials 30 (6), 762-767, 2001
452001
Nanoscratch-induced deformation of single crystal silicon
YQ Wu, H Huang, J Zou, JM Dell
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
442009
Junction depth measurement in HgCdTe using laser beam induced current (LBIC)
CA Musca, DA Redfern, EPG Smith, JM Dell, L Faraone, J Bajaj
Journal of electronic materials 28 (6), 603-610, 1999
441999
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