Junctionless nanowire transistor (JNT): Properties and design guidelines JP Colinge, A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, ... Solid-State Electronics 65, 33-37, 2011 | 680 | 2011 |
Reduced electric field in junctionless transistors JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (7), 2010 | 374 | 2010 |
Junctionless multiple-gate transistors for analog applications RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ... IEEE Transactions on Electron Devices 58 (8), 2511-2519, 2011 | 277 | 2011 |
Low subthreshold slope in junctionless multigate transistors CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (10), 2010 | 275 | 2010 |
Junctionless transistors: physics and properties JP Colinge, CW Lee, N Dehdashti Akhavan, R Yan, I Ferain, P Razavi, ... Semiconductor-on-insulator materials for nanoelectronics applications, 187-200, 2011 | 146 | 2011 |
Gold complexes with thiosemicarbazones: reactions of bi-and tridentate thiosemicarbazones with dichloro [2-(dimethylaminomethyl) phenyl-C 1, N] gold (III),[Au (damp-C 1, N) Cl 2] U Abram, K Ortner, R Gust, K Sommer Journal of the Chemical Society, Dalton Transactions, 735-744, 2000 | 103* | 2000 |
Mobility improvement in nanowire junctionless transistors by uniaxial strain JP Raskin, JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, R Yan, ... Applied Physics Letters 97 (4), 2010 | 58 | 2010 |
Junctionless 6T SRAM cell A Kranti, CW Lee, I Ferain, R Yan, N Akhavan, P Razavi, R Yu, ... Electronics letters 46 (22), 1491-1493, 2010 | 57 | 2010 |
Improvement of carrier ballisticity in junctionless nanowire transistors N Dehdashti Akhavan, I Ferain, P Razavi, R Yu, JP Colinge Applied Physics Letters 98 (10), 2011 | 55 | 2011 |
Optimized laser thermal annealing on germanium for high dopant activation and low leakage current M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ... IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014 | 54 | 2014 |
Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi Applied Physics Letters 101 (21), 2012 | 53 | 2012 |
Junctionless nanowire transistor: complementary metal-oxide-semiconductor without junctions JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, P Razavi, R Yan, ... Science of Advanced Materials 3 (3), 477-482, 2011 | 52 | 2011 |
Random telegraph-signal noise in junctionless transistors AN Nazarov, I Ferain, ND Akhavan, P Razavi, R Yu, JP Colinge Applied Physics Letters 98 (9), 2011 | 46 | 2011 |
Bipolar effects in unipolar junctionless transistors MS Parihar, D Ghosh, GA Armstrong, R Yu, P Razavi, A Kranti Applied Physics Letters 101 (9), 2012 | 45 | 2012 |
A simulation comparison between junctionless and inversion-mode MuGFETs JP Colinge, A Kranti, R Yan, I Ferain, ND Akhavan, P Razavi, CW Lee, ... ECS Transactions 35 (5), 63, 2011 | 45 | 2011 |
Short-channel junctionless nanowire transistors CW Lee, I Ferain, A Kranti, ND Akhavan, P Razavi, R Yan, R Yu, B O’Neill, ... Proc. SSDM, 1044-1045, 2010 | 45 | 2010 |
Electron mobility in heavily doped junctionless nanowire SOI MOSFETs T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas Microelectronic Engineering 109, 326-329, 2013 | 40 | 2013 |
Investigation of high-performance sub-50 nm junctionless nanowire transistors R Yan, A Kranti, I Ferain, CW Lee, R Yu, N Dehdashti, P Razavi, ... Microelectronics Reliability 51 (7), 1166-1171, 2011 | 40 | 2011 |
Introducing critical management studies: key dimensions L Taskin, H Willmott Gestion 25 (6), 27-38, 2000 | 39 | 2000 |
Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates R Yu, S Das, I Ferain, P Razavi, M Shayesteh, A Kranti, R Duffy, ... IEEE transactions on electron devices 59 (9), 2308-2313, 2012 | 36 | 2012 |