| Progress in the understanding of light‐and elevated temperature‐induced degradation in silicon solar cells: a review D Chen, M Vaqueiro Contreras, A Ciesla, P Hamer, B Hallam, M Abbott, ... Progress in Photovoltaics: Research and Applications 29 (11), 1180-1201, 2021 | 65 | 2021 |
| Graphene oxide films for field effect surface passivation of silicon for solar cells M Vaqueiro-Contreras, C Bartlam, RS Bonilla, VP Markevich, MP Halsall, ... Solar Energy Materials and Solar Cells 187, 189-193, 2018 | 56 | 2018 |
| Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells M Vaqueiro-Contreras, VP Markevich, J Coutinho, P Santos, IF Crowe, ... Journal of Applied Physics 125 (18), 2019 | 55 | 2019 |
| Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states J Mullins, VP Markevich, M Vaqueiro-Contreras, NE Grant, L Jensen, ... Journal of Applied Physics 124 (3), 2018 | 32 | 2018 |
| Boron–oxygen complex responsible for light‐induced degradation in silicon photovoltaic cells: A new insight into the problem VP Markevich, M Vaqueiro-Contreras, JT De Guzman, J Coutinho, ... physica status solidi (a) 216 (17), 1900315, 2019 | 29 | 2019 |
| Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon M Vaqueiro‐Contreras, VP Markevich, MP Halsall, AR Peaker, P Santos, ... physica status solidi (RRL)–Rapid Research Letters 11 (8), 1700133, 2017 | 21 | 2017 |
| Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques VP Markevich, M Vaqueiro-Contreras, SB Lastovskii, LI Murin, MP Halsall, ... Journal of Applied Physics 124 (22), 2018 | 13 | 2018 |
| Theory of a carbon‐oxygen‐hydrogen recombination center in n‐type Si P Santos, J Coutinho, S Öberg, M Vaqueiro‐Contreras, VP Markevich, ... physica status solidi (a) 214 (7), 1700309, 2017 | 9 | 2017 |
| Lifetime degradation of n-type Czochralski silicon after hydrogenation M Vaqueiro-Contreras, VP Markevich, J Mullins, MP Halsall, LI Murin, ... Journal of Applied Physics 123 (16), 2018 | 6 | 2018 |
| Review of laser doping and its applications in silicon solar cells M Vaqueiro-Contreras, B Hallam, C Chan IEEE Journal of Photovoltaics 13 (3), 373-384, 2023 | 5 | 2023 |
| Hydrogenation of dislocations in p-type cast-mono silicon A Samadi, C Sen, S Liu, U Varshney, D Chen, M Kim, AM Soufiani, ... AIP Conference Proceedings 2147 (1), 2019 | 5 | 2019 |
| On the conversion between recombination rates and electronic defect parameters in semiconductors MK Juhl, FD Heinz, G Coletti, FE Rougieux, C Sun, MV Contreras, ... IEEE Journal of Photovoltaics, 2023 | 3 | 2023 |
| Electronic Properties of Light-and Elevated Temperature-Induced Degradation in Float-Zone Silicon Z Zhou, MK Juhl, M Vaqueiro-Contreras, F Rougieux, G Coletti IEEE Journal of Photovoltaics 12 (6), 1369-1376, 2022 | 2 | 2022 |
| Electronic Properties of the Boron–Oxygen Defect Precursor of the Light-Induced Degradation in Silicon Z Zhou, M Vaqueiro-Contreras, MK Juhl, F Rougieux IEEE Journal of Photovoltaics 12 (5), 1135-1141, 2022 | 1 | 2022 |
| The surface passivation mechanism of graphene oxide for crystalline silicon M Vaqueiro-Contreras, AS Walton, C Bartlam, C Byrne, RS Bonilla, ... 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 1931-1934, 2019 | 1 | 2019 |
| Recombination centers resulting from reactions of hydrogen and oxygen in n-type Czochralski silicon VP Markevich, MV Contreras, J Mullins, M Halsall, B Hamilton, LI Murin, ... 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 0688-0693, 2016 | 1 | 2016 |
| System identification for nano-scale control M Vaqueiro Contreras The University of Manchester, Manchester, UK, 2015 | 1 | 2015 |
| Solar photovoltaic technologies for mitigating global climate change MV Contreras, J Li, M Kim, MA Green Handbook on Climate Change and Technology, 58-81, 2023 | | 2023 |
| Deep level transient spectroscopy study of float-zone silicon degradation under light and elevated temperature Z Zhou, MK Juhl, M Vaqueiro-Contreras, F Rougieux, G Coletti AIP Conference Proceedings 2487 (1), 2022 | | 2022 |
| Electronic Properties of the Boron-oxygen Defect Precursor in Silicon Z Zhou, M Vaqueiro-Contreras, MK Juhl, F Rougieux 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 0269-0271, 2021 | | 2021 |
