| Increased photoluminescence of strain-reduced, high-Sn composition Ge1− xSnx alloys grown by molecular beam epitaxy R Chen, H Lin, Y Huo, C Hitzman, TI Kamins, JS Harris Applied physics letters 99 (18), 2011 | 327 | 2011 |
| Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy Y Huo, H Lin, R Chen, M Makarova, Y Rong, M Li, TI Kamins, J Vuckovic, ... Applied Physics Letters 98 (1), 2011 | 183 | 2011 |
| Investigation of the direct band gaps in Ge1-xSnx alloys with strain control by photoreflectance spectroscopy H Lin, R Chen, W Lu, Y Huo, TI Kamins, JS Harris Applied Physics Letters 100 (10), 102109-102109-4, 2012 | 144 | 2012 |
| GeSn technology: Extending the Ge electronics roadmap S Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ... 2011 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2011 | 138 | 2011 |
| Raman study of strained Ge1− xSnx alloys H Lin, R Chen, Y Huo, TI Kamins, JS Harris Applied Physics Letters 98 (26), 2011 | 127 | 2011 |
| Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser B Dutt, H Lin, D Sukhdeo, B Vulovic, S Gupta, D Nam, K Saraswat, ... IEEE, 0 | 102 | |
| Structural and optical characterization of SixGe1− x− ySny alloys grown by molecular beam epitaxy H Lin, R Chen, W Lu, Y Huo, TI Kamins, JS Harris Applied Physics Letters 100 (14), 2012 | 52 | 2012 |
| Low-temperature growth of Ge1− xSnx thin films with strain control by molecular beam epitaxy H Lin, R Chen, Y Huo, TI Kamins, JS Harris Thin Solid Films 520 (11), 3927-3930, 2012 | 33 | 2012 |
| Electromodulation spectroscopy of direct optical transitions in Ge1− xSnx layers under hydrostatic pressure and built-in strain F Dybała, K Żelazna, H Maczko, M Gladysiewicz, J Misiewicz, ... Journal of Applied Physics 119 (21), 2016 | 26 | 2016 |
| X-ray diffraction analysis of step-graded InxGa1− xAs buffer layers grown by molecular beam epitaxy H Lin, Y Huo, Y Rong, R Chen, TI Kamins, JS Harris Journal of crystal growth 323 (1), 17-20, 2011 | 23 | 2011 |
| MBE growth of tensile-strained Ge quantum wells and quantum dots Y Huo, H Lin, R Chen, Y Rong, TI Kamins, JS Harris Frontiers of Optoelectronics 5, 112-116, 2012 | 18 | 2012 |
| Fabrication and Analysis of Epitaxially Grown GeSn Microdisk Resonator With 20-nm Free-Spectral Range S Cho, R Chen, S Koo, G Shambat, H Lin, N Park, J Vuckovic, TI Kamins, ... IEEE Photonics Technology Letters 23 (20), 1535-1537, 2011 | 18 | 2011 |
| GROWTH AND CHARACTERIZATION OF GeSn AND SiGeSn ALLOYS FOR OPTICAL INTERCONNECTS H Lin STANFORD UNIVERSITY, 2012 | 9 | 2012 |
| MBE growth of GeSn and SiGeSn heterojunctions for photonic devices JS Harris, H Lin, R Chen, Y Huo, E Fei, S Paik, S Cho, T Kamins ECS Transactions 50 (9), 601, 2013 | 7 | 2013 |
| Efficient luminescence in highly tensile-strained germanium Y Huo, H Lin, Y Rong, M Makarova, M Li, R Chen, TI Kamins, J Vuckovic, ... 2009 6th IEEE International Conference on Group IV Photonics, 265-267, 2009 | 4 | 2009 |
| MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift Y Huo, R Chen, H Lin, TI Kamins, JS Harris 7th IEEE International Conference on Group IV Photonics, 344-346, 2010 | 3 | 2010 |
| Direct band gap tensile-strained germanium Y Huo, H Lin, Y Rong, M Makarova, TI Kamins, J Vuckovic, JS Harris Conference on Lasers and Electro-Optics, CPDB7, 2009 | 3 | 2009 |
| Gene Technology S Gupta | 1 | 2011 |
| Optical properties of Ge1−zSnz/ SixGe1−x−ySnyheterostructures H Lin, R Chen, W Lu, Y Huo, TI Kamins, JS Harris IEEE Photonics Conference 2012, 919-920, 2012 | | 2012 |
| Photoluminescence from the Direct Bandgap of Ge (1-x) Sn (x) Alloys Grown by Molecular Beam Epitaxy R Chen, H Lin, Y Huo, S Gupta, K Saraswat, T Kamins, J Harris Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011 | | 2011 |
Robert ChenStanford UniversityVerified email at stanford.edu
