Hai Lin
Hai Lin
Verified email at stanford.edu
Title
Cited by
Cited by
Year
Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy
R Chen, H Lin, Y Huo, C Hitzman, TI Kamins, JS Harris
Applied physics letters 99 (18), 181125, 2011
2792011
Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy
Y Huo, H Lin, R Chen, M Makarova, Y Rong, M Li, TI Kamins, J Vuckovic, ...
Applied Physics Letters 98 (1), 011111, 2011
1652011
Investigation of the direct band gaps in Ge1-xSnx alloys with strain control by photoreflectance spectroscopy
H Lin, R Chen, W Lu, Y Huo, TI Kamins, JS Harris
Applied Physics Letters 100 (10), 102109-102109-4, 2012
1292012
GeSn technology: Extending the Ge electronics roadmap
S Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ...
2011 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2011
1112011
Raman study of strained Ge1−xSnx alloys
H Lin, R Chen, Y Huo, TI Kamins, JS Harris
Applied Physics Letters 98 (26), 261917, 2011
972011
Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser
B Dutt, H Lin, D Sukhdeo, B Vulovic, S Gupta, D Nam, K Saraswat, ...
IEEE, 0
74
Structural and optical characterization of SixGe1−xySny alloys grown by molecular beam epitaxy
H Lin, R Chen, W Lu, Y Huo, TI Kamins, JS Harris
Applied Physics Letters 100 (14), 141908, 2012
432012
Electron Devices Meeting (IEDM), 2011 IEEE International
S Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ...
IEEE, 2011
322011
Low-temperature growth of Ge1− xSnx thin films with strain control by molecular beam epitaxy
H Lin, R Chen, Y Huo, TI Kamins, JS Harris
Thin Solid Films 520 (11), 3927-3930, 2012
302012
Electromodulation spectroscopy of direct optical transitions in Ge1−xSnx layers under hydrostatic pressure and built-in strain
F Dybała, K Żelazna, H Maczko, M Gladysiewicz, J Misiewicz, ...
Journal of Applied Physics 119 (21), 215703, 2016
222016
X-ray diffraction analysis of step-graded InxGa1− xAs buffer layers grown by molecular beam epitaxy
H Lin, Y Huo, Y Rong, R Chen, TI Kamins, JS Harris
Journal of crystal growth 323 (1), 17-20, 2011
192011
MBE growth of tensile-strained Ge quantum wells and quantum dots
Y Huo, H Lin, R Chen, Y Rong, TI Kamins, JS Harris
Frontiers of Optoelectronics 5 (1), 112-116, 2012
152012
Fabrication and Analysis of Epitaxially Grown GeSn Microdisk Resonator With 20-nm Free-Spectral Range
S Cho, R Chen, S Koo, G Shambat, H Lin, N Park, J Vuckovic, TI Kamins, ...
IEEE Photonics Technology Letters 23 (20), 1535-1537, 2011
142011
GROWTH AND CHARACTERIZATION OF GeSn AND SiGeSn ALLOYS FOR OPTICAL INTERCONNECTS
H Lin
STANFORD UNIVERSITY, 2012
72012
MBE growth of GeSn and SiGeSn heterojunctions for photonic devices
JS Harris, H Lin, R Chen, Y Huo, E Fei, S Paik, S Cho, T Kamins
ECS Transactions 50 (9), 601, 2013
42013
Efficient luminescence in highly tensile-strained germanium
Y Huo, H Lin, Y Rong, M Makarova, M Li, R Chen, TI Kamins, J Vuckovic, ...
2009 6th IEEE International Conference on Group IV Photonics, 265-267, 2009
42009
MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift
Y Huo, R Chen, H Lin, TI Kamins, JS Harris
7th IEEE International Conference on Group IV Photonics, 344-346, 2010
32010
Direct band gap tensile-strained germanium
Y Huo, H Lin, Y Rong, M Makarova, TI Kamins, J Vuckovic, JS Harris
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum …, 2009
32009
GeSn technology
S Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ...
Electron Devices Meeting (IEDM), 11-16.16, 2011
12011
Optical properties of Ge1−zSnz/ SixGe1−x−ySnyheterostructures
H Lin, R Chen, W Lu, Y Huo, TI Kamins, JS Harris
IEEE Photonics Conference 2012, 919-920, 2012
2012
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Articles 1–20