Design, fabrication and characterisation of a 24.4% efficient interdigitated back contact solar cell E Franklin, K Fong, K McIntosh, A Fell, A Blakers, T Kho, D Walter, ... Progress in Photovoltaics: research and applications 24 (4), 411-427, 2016 | 176 | 2016 |
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald physica status solidi (RRL)–Rapid Research Letters 10 (6), 443-447, 2016 | 70 | 2016 |
Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon T Niewelt, M Selinger, NE Grant, W Kwapil, JD Murphy, MC Schubert Journal of Applied Physics 121 (18), 185702, 2017 | 66 | 2017 |
2010 35th IEEE Photovoltaic Specialists Conference IEEE Staff IEEE, 2010 | 65 | 2010 |
Effect of a post-deposition anneal on Al2O3/Si interface properties J Benick, A Richter, TTA Li, NE Grant, KR McIntosh, Y Ren, KJ Weber, ... 2010 35th IEEE Photovoltaic Specialists Conference, 000891-000896, 2010 | 62 | 2010 |
Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers NE Grant, FE Rougieux, D Macdonald, J Bullock, Y Wan Journal of Applied Physics 117 (5), 055711, 2015 | 54 | 2015 |
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ... physica status solidi (a) 213 (11), 2844-2849, 2016 | 50 | 2016 |
Passivation of a (100) silicon surface by silicon dioxide grown in nitric acid NE Grant, KR McIntosh IEEE electron device letters 30 (9), 922-924, 2009 | 45 | 2009 |
Evaluation of the bulk lifetime of silicon wafers by immersion in hydrofluoric acid and illumination NE Grant, KR McIntosh, JT Tan ECS Journal of Solid State Science and Technology 1 (2), P55, 2012 | 34 | 2012 |
Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon FE Rougieux, NE Grant, C Barugkin, D Macdonald, JD Murphy IEEE Journal of Photovoltaics 5 (2), 495-498, 2014 | 33 | 2014 |
Quantifying the optical losses in back-contact solar cells KR McIntosh, TC Kho, KC Fong, SC Baker-Finch, Y Wan, N Zin, ... 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 0115-0123, 2014 | 33 | 2014 |
Low surface recombination velocity on (100) silicon by electrochemically grown silicon dioxide annealed at low temperature NE Grant, KR McIntosh IEEE electron device letters 31 (9), 1002-1004, 2010 | 32 | 2010 |
Temporary surface passivation for characterisation of bulk defects in silicon: a review NE Grant, JD Murphy physica status solidi (RRL)–Rapid Research Letters 11 (11), 1700243, 2017 | 30 | 2017 |
Superacid passivation of crystalline silicon surfaces J Bullock, D Kiriya, N Grant, A Azcatl, M Hettick, T Kho, P Phang, HC Sio, ... ACS applied materials & interfaces 8 (36), 24205-24211, 2016 | 30 | 2016 |
Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cells T Rahman, A To, ME Pollard, NE Grant, J Colwell, DNR Payne, ... Progress in Photovoltaics: Research and Applications 26 (1), 38-47, 2018 | 28 | 2018 |
Superacid-treated silicon surfaces: Extending the limit of carrier lifetime for photovoltaic applications NE Grant, T Niewelt, NR Wilson, EC Wheeler-Jones, J Bullock, M Al-Amin, ... IEEE J. Photovolt. 7 (6), 1574, 2017 | 26 | 2017 |
Charge density in atmospheric pressure chemical vapor deposition TiO2 on SiO2-passivated silicon KR McIntosh, SC Baker-Finch, NE Grant, AF Thomson, S Singh, ID Baikie Journal of The Electrochemical Society 156 (11), G190, 2009 | 26 | 2009 |
Taking monocrystalline silicon to the ultimate lifetime limit T Niewelt, A Richter, TC Kho, NE Grant, RS Bonilla, B Steinhauser, ... Solar Energy Materials and Solar Cells 185, 252-259, 2018 | 24 | 2018 |
Superacid-derived surface passivation for measurement of ultra-long lifetimes in silicon photovoltaic materials AI Pointon, NE Grant, EC Wheeler-Jones, PP Altermatt, JD Murphy Solar Energy Materials and Solar Cells 183, 164-172, 2018 | 17 | 2018 |
Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states J Mullins, VP Markevich, M Vaqueiro-Contreras, NE Grant, L Jensen, ... Journal of Applied Physics 124 (3), 035701, 2018 | 17 | 2018 |