| Phase perfection in zinc blende and wurtzite III− V nanowires using basic growth parameters HJ Joyce, J Wong-Leung, Q Gao, HH Tan, C Jagadish Nano letters 10 (3), 908-915, 2010 | 546 | 2010 |
| Optically pumped room-temperature GaAs nanowire lasers D Saxena, S Mokkapati, P Parkinson, N Jiang, Q Gao, HH Tan, ... Nature photonics 7 (12), 963-968, 2013 | 533 | 2013 |
| Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, X Zhang, Y Guo, J Zou Nano letters 7 (4), 921-926, 2007 | 361 | 2007 |
| III–V semiconductor nanowires for optoelectronic device applications HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, J Zou, LM Smith, ... Progress in Quantum Electronics 35 (2-3), 23-75, 2011 | 327 | 2011 |
| Carrier lifetime and mobility enhancement in nearly defect-free core− shell nanowires measured using time-resolved terahertz spectroscopy P Parkinson, HJ Joyce, Q Gao, HH Tan, X Zhang, J Zou, C Jagadish, ... Nano letters 9 (9), 3349-3353, 2009 | 324 | 2009 |
| Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy HJ Joyce, CJ Docherty, Q Gao, HH Tan, C Jagadish, J Lloyd-Hughes, ... Nanotechnology 24 (21), 214006, 2013 | 299 | 2013 |
| Broadband metamaterial absorbers P Yu, LV Besteiro, Y Huang, J Wu, L Fu, HH Tan, C Jagadish, ... Advanced Optical Materials 7 (3), 1800995, 2019 | 296 | 2019 |
| Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires Y Kim, HJ Joyce, Q Gao, HH Tan, C Jagadish, M Paladugu, J Zou, ... Nano letters 6 (4), 599-604, 2006 | 268 | 2006 |
| Transient terahertz conductivity of GaAs nanowires P Parkinson, J Lloyd-Hughes, Q Gao, HH Tan, C Jagadish, MB Johnston, ... Nano Letters 7 (7), 2162-2165, 2007 | 258 | 2007 |
| Nonlinear generation of vector beams from AlGaAs nanoantennas R Camacho-Morales, M Rahmani, S Kruk, L Wang, L Xu, DA Smirnova, ... Nano letters 16 (11), 7191-7197, 2016 | 244 | 2016 |
| Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires A Mishra, LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, ... Applied Physics Letters 91 (26), 263104, 2007 | 239 | 2007 |
| Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, Y Kim, ... Applied Physics Letters 89 (17), 173126, 2006 | 225 | 2006 |
| Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures K Pemasiri, M Montazeri, R Gass, LM Smith, HE Jackson, J Yarrison-Rice, ... Nano letters 9 (2), 648-654, 2009 | 220 | 2009 |
| Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing Q Gao, D Saxena, F Wang, L Fu, S Mokkapati, Y Guo, L Li, J Wong-Leung, ... Nano letters 14 (9), 5206-5211, 2014 | 204 | 2014 |
| Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy HJ Joyce, J Wong-Leung, CK Yong, CJ Docherty, S Paiman, Q Gao, ... Nano letters 12 (10), 5325-5330, 2012 | 183 | 2012 |
| Unexpected benefits of rapid growth rate for III− V nanowires HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, MA Fickenscher, S Perera, ... Nano letters 9 (2), 695-701, 2009 | 168 | 2009 |
| Liquid crystal based nonlinear fishnet metamaterials A Minovich, J Farnell, DN Neshev, I McKerracher, F Karouta, J Tian, ... Applied Physics Letters 100 (12), 121113, 2012 | 155 | 2012 |
| Growth mechanism of truncated triangular III–V nanowires J Zou, M Paladugu, H Wang, GJ Auchterlonie, YN Guo, Y Kim, Q Gao, ... Small 3 (3), 389-393, 2007 | 148 | 2007 |
| Multipulse operation of a Ti: sapphire laser mode locked by an ion-implanted semiconductor saturable-absorber mirror MJ Lederer, B Luther-Davies, HH Tan, C Jagadish, NN Akhmediev, ... JOSA B 16 (6), 895-904, 1999 | 148 | 1999 |
| Damage to epitaxial GaN layers by silicon implantation HH Tan, JS Williams, J Zou, DJH Cockayne, SJ Pearton, RA Stall Applied physics letters 69 (16), 2364-2366, 1996 | 146 | 1996 |
