Kaan Oguz
Kaan Oguz
Research Engineer, Components Research, Intel
Verified email at tcd.ie
Title
Cited by
Cited by
Year
Magnetoresistance in magnetic tunnel junctions with an organic barrier and an MgO spin filter
G Szulczewski, H Tokuc, K Oguz, JMD Coey
Applied Physics Letters 95 (20), 202506, 2009
642009
Balancing energy barrier between states in perpendicular magnetic tunnel junctions
CC Kuo, BS Doyle, A Raychowdhury, RG Mojarad, K Oguz
US Patent 9,472,748, 2016
602016
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
592018
Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
K Oguz, ML Doczy, B Doyle, U Shah, DL Kencke, RG MOJARAD, ...
US Patent 8,836,056, 2014
552014
Magnetic dead layers in sputtered films
K Oguz, P Jivrajka, M Venkatesan, G Feng, JMD Coey
Journal of Applied Physics 103 (7), 07B526, 2008
522008
Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes
H Kurt, K Rode, K Oguz, M Boese, CC Faulkner, JMD Coey
Applied Physics Letters 96 (26), 262501, 2010
462010
Perpendicular magnetic anisotropy in CoFeB/Pd bilayers
C Fowley, N Decorde, K Oguz, K Rode, H Kurt, JMD Coey
IEEE transactions on magnetics 46 (6), 2116-2118, 2010
352010
Giant tunneling magnetoresistance with electron beam evaporated MgO barrier and CoFeB electrodes
H Kurt, K Oguz, T Niizeki, JMD Coey
Journal of Applied Physics 107 (8), 083920, 2010
282010
Electric field induced changes in the coercivity of a thin-film ferromagnet
C Fowley, K Rode, K Oguz, H Kurt, JMD Coey
Journal of Physics D: Applied Physics 44 (30), 305001, 2011
252011
Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same
BS Doyle, DL Kencke, CC Kuo, U Shah, K Oguz, ML Doczy, S Suri, ...
US Patent 8,786,040, 2014
172014
Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers
CC Kuo, K Oguz, ML Doczy, BS Doyle, S Suri, RS Chau, DL Kencke, ...
US Patent App. 14/039,668, 2015
142015
Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
BS Doyle, CC Kuo, K Oguz, U Shah, EV Karpov, RG Mojarad, ML Doczy, ...
US Patent 8,796,797, 2014
142014
Room-temperature magnetoresistance in CoFeB/STO/CoFeB magnetic tunnel junctions
K Oguz, JMD Coey
Journal of Magnetism and Magnetic Materials 321 (8), 1009-1011, 2009
142009
High stability spintronic memory
CC Kuo, K Oguz, BS Doyle, EV Karpov, RG Mojarad, DL Kencke, ...
US Patent 9,231,194, 2016
122016
Morphology, order, light transmittance, and water vapor permeability of aluminum‐coated polypropylene zeolite composite films
D Balköse, K Oguz, L Ozyuzer, S Tari, E Arkis, FO Omurlu
Journal of applied polymer science 120 (3), 1671-1678, 2011
122011
Method for reducing size and center positioning of magnetic memory element contacts
BS Doyle, YJ Lee, CC Kuo, DL Kencke, K Oguz, RG Mojard, U Shah
US Patent 9,793,467, 2017
112017
Investigation of extrinsic damping caused by magnetic dead layer in Ta-CoFeB-MgO multilayers with perpendicular anisotropy
N Sato, KP O'Brien, K Millard, B Doyle, K Oguz
Journal of Applied Physics 119 (9), 093902, 2016
112016
Magnetoresistance in CuPc based organic magnetic tunnel junctions
H Tokuc, K Oguz, F Burke, JMD Coey
Journal of Physics: Conference Series 303 (1), 012097, 2011
112011
Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer
CC Kuo, K Oguz, BS Doyle, ML Doczy, DL Kencke, S Suri, RS Chau
US Patent 9,882,121, 2018
82018
Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
K Oguz, ML Doczy, B Doyle, U Shah, DL Kencke, RG MOJARAD, ...
US Patent 8,980,650, 2015
72015
The system can't perform the operation now. Try again later.
Articles 1–20