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Mousiki Kar
Mousiki Kar
Verified email at heritageit.edu
Title
Cited by
Cited by
Year
CDBA-based electronically tunable filters and sinusoid quadrature oscillator
R Nandi, P Venkateswaran, S Das, M Kar
Journal of telecommunication 4 (1), 35-41, 2010
132010
MMCC based electronically tunable allpass filters using grounded synthetic inductor
R Nandi, P Venkateswaran, M Kar
Circuits and Systems 2014, 2014
122014
Electronically tunable dual-input integrator employing a single CDBA and a multiplier: voltage controlled quadrature oscillator design
R Nandi, M Kar, S Das
Active and Passive Electronic Components 2009, 2009
112009
A Comparative Analysis of Analog Performances of Underlapped Dual Gate AlGaN/GaN Based MOS-HEMT and Schottky-HEMT
H Mukherjee, R Dasgupta, M Kar, A Kundu
2020 IEEE Calcutta Conference (CALCON), 412-416, 2020
72020
Active-R tunable integrators using a current differencing buffered amplifier
R Nandi, S Das, M Kar, S Das
International journal of electronics 97 (2), 129-137, 2010
62010
Third order lowpass Butterworth filters using unity gain current amplifiers
R Nandi, M Kar
IEICE Electronics Express 6 (20), 1450-1455, 2009
62009
Enhancement in analog/RF and power performance of underlapped dual-gate GaN-based MOSHEMTs with quaternary InAlGaN barrier of varying widths
H Mukherjee, M Kar, A Kundu
Journal of Electronic Materials 51 (2), 692-703, 2022
52022
Synthetic inductor based resonators using DVCCTA
R Nandi, M Kar, S Das
2011 IEEE EUROCON-International Conference on Computer as a Tool, 1-3, 2011
52011
Impact of AlGaN Doping Concentration on the Analog/RF Performance of a Double Gate Underlap n-AlGaN/GaN MOSHEMT
R Mitra, A Roy, A Kundu, M Kar
2020 International Symposium on Devices, Circuits and Systems (ISDCS), 1-4, 2020
32020
Study of effective graded oxide capacitance and length variation on analog, rf and power performances of dual gate underlap MOS-HEMT
S Ghosh, A Mondal, M Kar, A Kundu
Silicon 14 (7), 3383-3393, 2022
22022
Impact of Source and Drain Underlap on Analog Performance of Double-Gate AlGaN/GaN MOS-HEMT
S Kumar, M Ali, R Kumar, R Mitra, A Kundu, M Kar
2020 IEEE Calcutta Conference (CALCON), 378-381, 2020
22020
Influence of GaN layer to AlGaN layer width Ratio on Analog Performance of an Underlapped DG AlGaN/GaN based MOS-HEMT
U Chatterjee, A Pal, A Kundu, M Kar
2020 IEEE Calcutta Conference (CALCON), 426-430, 2020
22020
Third order low pass Butterworth characteristic realization using the DBTA
R Nandi, S Das, M Kar
2011 IEEE EUROCON-International Conference on Computer as a Tool, 1-3, 2011
22011
Effect of Doped AlGaN Width Variation on Analog Performance of Dual Gate Underlap MOS-HEMT
A Mondal, S Ghosh, A Roy, M Kar, A Kundu
2020 IEEE Calcutta Conference (CALCON), 244-247, 2020
12020
Device and circuit analysis of a sub 20 nm double gate MOSFET with gate stack using a look-up-table-based approach
S Chakraborty, A Dasgupta, R Das, M Kar, A Kundu, CK Sarkar
Journal of Semiconductors 38 (12), 124001, 2017
12017
Symmetric/asymmetric underlap DG-MOSFET: A study of analog/RF performance using non-quasi static approach
A Mandal, D Saha, D Ghosal, S Bhattacharya, A Kundu, M Kar
2017 Devices for Integrated Circuit (DevIC), 837-840, 2017
12017
Analytical Comparison of Analog/RF Performance of DG InAlGaN/GaN based MOS-HEMTsfor GaN width variation
K Sorkhel, A Ghosh, H Mukherjee, S Chatterjee, M Kar, A Kundu
2023 IEEE 2nd International Conference on Industrial Electronics …, 2023
2023
Comparative study on Analog & RF Performance of an Underlapped DG InAlGaN/GaN based MOS-HEMT between GaN layer width and InAlGaN layer width variation
P Roy, H Mukherjee, M Kar, S Chatterjee, A Kundu
2023 IEEE 2nd International Conference on Industrial Electronics …, 2023
2023
Influence of Introducing Symmetric Underlap on Analog Performance of Dual Gate AlGaN/GaN MOS-HEMT
A Banerjee, R Mitra, A Roy, A Kundu, M Kar, S Chatterjee
2023 IEEE 2nd International Conference on Industrial Electronics …, 2023
2023
Multigate MOS-HEMT
A Kundu, M Kar
HEMT Technology and Applications, 115-127, 2023
2023
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