CDBA-based electronically tunable filters and sinusoid quadrature oscillator R Nandi, P Venkateswaran, S Das, M Kar Journal of telecommunication 4 (1), 35-41, 2010 | 13 | 2010 |
MMCC based electronically tunable allpass filters using grounded synthetic inductor R Nandi, P Venkateswaran, M Kar Circuits and Systems 2014, 2014 | 12 | 2014 |
Electronically tunable dual-input integrator employing a single CDBA and a multiplier: voltage controlled quadrature oscillator design R Nandi, M Kar, S Das Active and Passive Electronic Components 2009, 2009 | 11 | 2009 |
A Comparative Analysis of Analog Performances of Underlapped Dual Gate AlGaN/GaN Based MOS-HEMT and Schottky-HEMT H Mukherjee, R Dasgupta, M Kar, A Kundu 2020 IEEE Calcutta Conference (CALCON), 412-416, 2020 | 7 | 2020 |
Active-R tunable integrators using a current differencing buffered amplifier R Nandi, S Das, M Kar, S Das International journal of electronics 97 (2), 129-137, 2010 | 6 | 2010 |
Third order lowpass Butterworth filters using unity gain current amplifiers R Nandi, M Kar IEICE Electronics Express 6 (20), 1450-1455, 2009 | 6 | 2009 |
Enhancement in analog/RF and power performance of underlapped dual-gate GaN-based MOSHEMTs with quaternary InAlGaN barrier of varying widths H Mukherjee, M Kar, A Kundu Journal of Electronic Materials 51 (2), 692-703, 2022 | 5 | 2022 |
Synthetic inductor based resonators using DVCCTA R Nandi, M Kar, S Das 2011 IEEE EUROCON-International Conference on Computer as a Tool, 1-3, 2011 | 5 | 2011 |
Impact of AlGaN Doping Concentration on the Analog/RF Performance of a Double Gate Underlap n-AlGaN/GaN MOSHEMT R Mitra, A Roy, A Kundu, M Kar 2020 International Symposium on Devices, Circuits and Systems (ISDCS), 1-4, 2020 | 3 | 2020 |
Study of effective graded oxide capacitance and length variation on analog, rf and power performances of dual gate underlap MOS-HEMT S Ghosh, A Mondal, M Kar, A Kundu Silicon 14 (7), 3383-3393, 2022 | 2 | 2022 |
Impact of Source and Drain Underlap on Analog Performance of Double-Gate AlGaN/GaN MOS-HEMT S Kumar, M Ali, R Kumar, R Mitra, A Kundu, M Kar 2020 IEEE Calcutta Conference (CALCON), 378-381, 2020 | 2 | 2020 |
Influence of GaN layer to AlGaN layer width Ratio on Analog Performance of an Underlapped DG AlGaN/GaN based MOS-HEMT U Chatterjee, A Pal, A Kundu, M Kar 2020 IEEE Calcutta Conference (CALCON), 426-430, 2020 | 2 | 2020 |
Third order low pass Butterworth characteristic realization using the DBTA R Nandi, S Das, M Kar 2011 IEEE EUROCON-International Conference on Computer as a Tool, 1-3, 2011 | 2 | 2011 |
Effect of Doped AlGaN Width Variation on Analog Performance of Dual Gate Underlap MOS-HEMT A Mondal, S Ghosh, A Roy, M Kar, A Kundu 2020 IEEE Calcutta Conference (CALCON), 244-247, 2020 | 1 | 2020 |
Device and circuit analysis of a sub 20 nm double gate MOSFET with gate stack using a look-up-table-based approach S Chakraborty, A Dasgupta, R Das, M Kar, A Kundu, CK Sarkar Journal of Semiconductors 38 (12), 124001, 2017 | 1 | 2017 |
Symmetric/asymmetric underlap DG-MOSFET: A study of analog/RF performance using non-quasi static approach A Mandal, D Saha, D Ghosal, S Bhattacharya, A Kundu, M Kar 2017 Devices for Integrated Circuit (DevIC), 837-840, 2017 | 1 | 2017 |
Analytical Comparison of Analog/RF Performance of DG InAlGaN/GaN based MOS-HEMTsfor GaN width variation K Sorkhel, A Ghosh, H Mukherjee, S Chatterjee, M Kar, A Kundu 2023 IEEE 2nd International Conference on Industrial Electronics …, 2023 | | 2023 |
Comparative study on Analog & RF Performance of an Underlapped DG InAlGaN/GaN based MOS-HEMT between GaN layer width and InAlGaN layer width variation P Roy, H Mukherjee, M Kar, S Chatterjee, A Kundu 2023 IEEE 2nd International Conference on Industrial Electronics …, 2023 | | 2023 |
Influence of Introducing Symmetric Underlap on Analog Performance of Dual Gate AlGaN/GaN MOS-HEMT A Banerjee, R Mitra, A Roy, A Kundu, M Kar, S Chatterjee 2023 IEEE 2nd International Conference on Industrial Electronics …, 2023 | | 2023 |
Multigate MOS-HEMT A Kundu, M Kar HEMT Technology and Applications, 115-127, 2023 | | 2023 |