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Wei Yang (杨威)
Wei Yang (杨威)
Institute of Phsics (CAS)
Verified email at iphy.ac.cn
Title
Cited by
Cited by
Year
Superconductors, orbital magnets and correlated states in magic-angle bilayer graphene
X Lu, P Stepanov, W Yang, M Xie, MA Aamir, I Das, C Urgell, K Watanabe, ...
Nature 574 (7780), 653-657, 2019
13002019
Epitaxial growth of single-domain graphene on hexagonal boron nitride
W Yang, G Chen, Z Shi, CC Liu, L Zhang, G Xie, M Cheng, D Wang, ...
Nature materials 12 (9), 792-797, 2013
10732013
Ultra-sensitive strain sensors based on piezoresistive nanographene films
J Zhao, C He, R Yang, Z Shi, M Cheng, W Yang, G Xie, D Wang, D Shi, ...
Applied Physics Letters 101 (6), 2012
3892012
Photoinduced doping in heterostructures of graphene and boron nitride
L Ju, J Velasco, E Huang, S Kahn, C Nosiglia, HZ Tsai, W Yang, ...
Nature nanotechnology 9 (5), 348-352, 2014
3552014
Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes
J Zhang, H Yu, W Chen, X Tian, D Liu, M Cheng, G Xie, W Yang, R Yang, ...
ACS nano 8 (6), 6024-6030, 2014
3212014
Restoration of graphene from graphene oxide by defect repair
M Cheng, R Yang, L Zhang, Z Shi, W Yang, D Wang, G Xie, D Shi, ...
Carbon 50 (7), 2581-2587, 2012
3012012
Observation of an intrinsic bandgap and Landau level renormalization in graphene/boron-nitride heterostructures
ZG Chen, Z Shi, W Yang, X Lu, Y Lai, H Yan, F Wang, G Zhang, Z Li
Nature communications 5 (1), 4461, 2014
1772014
Thermally induced graphene rotation on hexagonal boron nitride
D Wang, G Chen, C Li, M Cheng, W Yang, S Wu, G Xie, J Zhang, J Zhao, ...
Physical review letters 116 (12), 126101, 2016
1752016
Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes
Q Wang, N Li, J Tang, J Zhu, Q Zhang, Q Jia, Y Lu, Z Wei, H Yu, Y Zhao, ...
Nano letters 20 (10), 7193-7199, 2020
1662020
Multilevel Resistive Switching in Planar Graphene/SiO2 Nanogap Structures
C He, Z Shi, L Zhang, W Yang, R Yang, D Shi, G Zhang
ACS nano 6 (5), 4214-4221, 2012
1402012
Growth, characterization, and properties of nanographene
W Yang, C He, L Zhang, Y Wang, Z Shi, M Cheng, G Xie, D Wang, R Yang, ...
Small 8 (9), 1429-1435, 2012
1032012
A graphene Zener–Klein transistor cooled by a hyperbolic substrate
W Yang, S Berthou, X Lu, Q Wilmart, A Denis, M Rosticher, K Watanabe, ...
Nature Nanotechnology 13, 47-52, 2018
922018
Gate-dependent pseudospin mixing in graphene/boron nitride moiré superlattices
Z Shi, C Jin, W Yang, L Ju, J Horng, X Lu, HA Bechtel, MC Martin, D Fu, ...
Nature Physics 10 (10), 743-747, 2014
892014
Tunable Electroluminescence in Planar Graphene/SiO2 Memristors
C He, J Li, X Wu, P Chen, J Zhao, K Yin, M Cheng, W Yang, G Xie, ...
Advanced Materials 25 (39), 5593-5598, 2013
842013
A reliable all‐2D materials artificial synapse for high energy‐efficient neuromorphic computing
J Tang, C He, J Tang, K Yue, Q Zhang, Y Liu, Q Wang, S Wang, N Li, ...
Advanced Functional Materials 31 (27), 2011083, 2021
752021
Ultrasensitive displacement noise measurement of carbon nanotube mechanical resonators
SL De Bonis, C Urgell, W Yang, C Samanta, A Noury, J Vergara-Cruz, ...
Nano letters 18 (8), 5324-5328, 2018
752018
In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics
J Tang, Z Wei, Q Wang, Y Wang, B Han, X Li, B Huang, M Liao, J Liu, N Li, ...
Small 16 (42), 2004276, 2020
722020
Cooling and self-oscillation in a nanotube electromechanical resonator
C Urgell, W Yang, SL De Bonis, C Samanta, MJ Esplandiu, Q Dong, Y Jin, ...
Nature Physics 16 (1), 32-37, 2020
662020
Isolated nanographene crystals for nano-floating gate in charge trapping memory
R Yang, C Zhu, J Meng, Z Huo, M Cheng, D Liu, W Yang, D Shi, M Liu, ...
Scientific reports 3 (1), 2126, 2013
622013
A general route towards defect and pore engineering in graphene
G Xie, R Yang, P Chen, J Zhang, X Tian, S Wu, J Zhao, M Cheng, W Yang, ...
Small 10 (11), 2280-2284, 2014
582014
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