| Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon D Macdonald, F Rougieux, A Cuevas, B Lim, J Schmidt, M Di Sabatino, ... Journal of Applied Physics 105 (9), 093704-093704-7, 2009 | 181 | 2009 |
| Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence HT Nguyen, FE Rougieux, B Mitchell, D Macdonald Journal of Applied Physics 115 (4), 2014 | 118 | 2014 |
| Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald physica status solidi (RRL)-Rapid Research Letters 10 (6), 443-447, 2016 | 113 | 2016 |
| A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon C Sun, FE Rougieux, D Macdonald Journal of Applied Physics 117 (4), 2015 | 99 | 2015 |
| Generation and annihilation of boron-oxygen-related recombination centers in compensated p-and n-type silicon B Lim, F Rougieux, D Macdonald, K Bothe, J Schmidt Journal of Applied Physics 108 (10), 103722, 2010 | 98 | 2010 |
| Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ... physica status solidi (a) 213 (11), 2844-2849, 2016 | 92 | 2016 |
| Hydrogen-induced degradation: Explaining the mechanism behind light-and elevated temperature-induced degradation in n-and p-type silicon D Chen, P Hamer, M Kim, C Chan, AC nee Wenham, F Rougieux, ... Solar Energy Materials and Solar Cells 207, 110353, 2020 | 83 | 2020 |
| Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron M Forster, E Fourmond, FE Rougieux, A Cuevas, R Gotoh, K Fujiwara, ... Applied Physics Letters 100 (4), 2012 | 76 | 2012 |
| Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers NE Grant, FE Rougieux, D Macdonald, J Bullock, Y Wan Journal of Applied Physics 117 (5), 2015 | 73 | 2015 |
| Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon FE Rougieux, D Macdonald, A Cuevas, S Ruffell, J Schmidt, B Lim, ... Journal of Applied Physics 108 (1), 2010 | 70 | 2010 |
| Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review FE Rougieux, C Sun, D Macdonald Solar Energy Materials and Solar Cells 187, 263-272, 2018 | 51 | 2018 |
| Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon FE Rougieux, B Lim, J Schmidt, M Forster, D Macdonald, A Cuevas Journal of Applied Physics 110 (6), 2011 | 50 | 2011 |
| Reassessment of the recombination parameters of chromium in n-and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon C Sun, FE Rougieux, D Macdonald Journal of applied physics 115 (21), 2014 | 48 | 2014 |
| Accurate measurement of the formation rate of iron–boron pairs in silicon J Tan, D Macdonald, F Rougieux, A Cuevas Semiconductor Science and Technology 26 (5), 055019, 2011 | 46 | 2011 |
| Micrometer-scale deep-level spectral photoluminescence from dislocations in multicrystalline silicon HT Nguyen, FE Rougieux, F Wang, H Tan, D Macdonald IEEE Journal of Photovoltaics 5 (3), 799-804, 2015 | 42 | 2015 |
| Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon FE Rougieux, NE Grant, C Barugkin, D Macdonald, JD Murphy IEEE Journal of Photovoltaics 5 (2), 495-498, 2014 | 42 | 2014 |
| Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer V Raj, TS dos Santos, F Rougieux, K Vora, M Lysevych, L Fu, S Mokkapati, ... Journal of Physics D: Applied Physics 51 (39), 395301, 2018 | 41 | 2018 |
| Compensation Engineering for Silicon Solar Cells A Cuevas, M Forster, F Rougieux, D Macdonald Energy Procedia 15, 67-77, 2012 | 38 | 2012 |
| Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers R Basnet, FE Rougieux, C Sun, SP Phang, C Samundsett, R Einhaus, ... IEEE Journal of Photovoltaics 8 (4), 990-996, 2018 | 35 | 2018 |
| Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon M Forster, A Cuevas, E Fourmond, FE Rougieux, M Lemiti Journal of Applied Physics 111 (4), 2012 | 35 | 2012 |
Daniel MacdonaldProfessor, Engineering, The Australian National UniversityVerified email at anu.edu.au
