Fiacre Rougieux
Fiacre Rougieux
Senior lecturer, The University of New South Wales
Verified email at unsw.edu.au - Homepage
TitleCited byYear
Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon
D Macdonald, F Rougieux, A Cuevas, B Lim, J Schmidt, M Di Sabatino, ...
Journal of Applied Physics 105 (9), 093704-093704-7, 2009
1512009
Generation and annihilation of boron-oxygen-related recombination centers in compensated p-and n-type silicon
B Lim, F Rougieux, D Macdonald, K Bothe, J Schmidt
Journal of Applied Physics 108 (10), 103722, 2010
812010
Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence
HT Nguyen, FE Rougieux, B Mitchell, D Macdonald
Journal of Applied Physics 115 (4), 043710, 2014
632014
Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon
FE Rougieux, D Macdonald, A Cuevas, S Ruffell, J Schmidt, B Lim, ...
Journal of Applied Physics 108 (1), 013706, 2010
582010
A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon
C Sun, FE Rougieux, D Macdonald
Journal of Applied Physics 117 (4), 045702, 2015
572015
Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron
M Forster, E Fourmond, FE Rougieux, A Cuevas, R Gotoh, K Fujiwara, ...
Applied Physics Letters 100 (4), 042110, 2012
532012
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald
physica status solidi (RRL)-Rapid Research Letters 10 (6), 443-447, 2016
442016
Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers
NE Grant, FE Rougieux, D Macdonald, J Bullock, Y Wan
Journal of Applied Physics 117 (5), 055711, 2015
422015
Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon
FE Rougieux, B Lim, J Schmidt, M Forster, D Macdonald, A Cuevas
Journal of Applied Physics 110 (6), 063708, 2011
422011
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ...
physica status solidi (a) 213 (11), 2844-2849, 2016
322016
Accurate measurement of the formation rate of iron–boron pairs in silicon
J Tan, D Macdonald, F Rougieux, A Cuevas
Semiconductor Science and Technology 26 (5), 055019, 2011
322011
Micrometer-scale deep-level spectral photoluminescence from dislocations in multicrystalline silicon
HT Nguyen, FE Rougieux, F Wang, H Tan, D Macdonald
IEEE Journal of Photovoltaics 5 (3), 799-804, 2015
272015
Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon
FE Rougieux, NE Grant, C Barugkin, D Macdonald, JD Murphy
IEEE Journal of Photovoltaics 5 (2), 495-498, 2014
272014
Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells
M Forster, P Wagner, J Degoulange, R Einhaus, G Galbiati, FE Rougieux, ...
Solar Energy Materials and Solar Cells 120, 390-395, 2014
272014
High efficiency UMG silicon solar cells: impact of compensation on cell parameters
F Rougieux, C Samundsett, KC Fong, A Fell, P Zheng, D Macdonald, ...
Progress in Photovoltaics: Research and Applications 24 (5), 725-734, 2016
242016
Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon
M Forster, A Cuevas, E Fourmond, FE Rougieux, M Lemiti
Journal of Applied Physics 111 (4), 043701, 2012
242012
Reassessment of the recombination parameters of chromium in n-and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon
C Sun, FE Rougieux, D Macdonald
Journal of Applied Physics 115 (21), 214907, 2014
222014
Transport properties of p‐type compensated silicon at room temperature
FE Rougieux, D Macdonald, A Cuevas
Progress in Photovoltaics: Research and Applications 19 (7), 787-793, 2011
222011
Recombination activity and impact of the boron–oxygen-related defect in compensated n-type silicon
FE Rougieux, M Forster, D MacDonald, A Cuevas, B Lim, J Schmidt
IEEE Journal of Photovoltaics 1 (1), 54-58, 2011
222011
Upgraded metallurgical-grade silicon solar cells with efficiency above 20%
P Zheng, FE Rougieux, C Samundsett, X Yang, Y Wan, J Degoulange, ...
Applied Physics Letters 108 (12), 122103, 2016
182016
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