| Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon D Macdonald, F Rougieux, A Cuevas, B Lim, J Schmidt, M Di Sabatino, ... Journal of Applied Physics 105 (9), 093704-093704-7, 2009 | 157 | 2009 |
| Generation and annihilation of boron-oxygen-related recombination centers in compensated p-and n-type silicon B Lim, F Rougieux, D Macdonald, K Bothe, J Schmidt Journal of Applied Physics 108 (10), 103722, 2010 | 89 | 2010 |
| Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence HT Nguyen, FE Rougieux, B Mitchell, D Macdonald Journal of Applied Physics 115 (4), 043710, 2014 | 77 | 2014 |
| Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald physica status solidi (RRL)-Rapid Research Letters 10 (6), 443-447, 2016 | 68 | 2016 |
| A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon C Sun, FE Rougieux, D Macdonald Journal of Applied Physics 117 (4), 045702, 2015 | 66 | 2015 |
| Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon FE Rougieux, D Macdonald, A Cuevas, S Ruffell, J Schmidt, B Lim, ... Journal of Applied Physics 108 (1), 013706, 2010 | 59 | 2010 |
| Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron M Forster, E Fourmond, FE Rougieux, A Cuevas, R Gotoh, K Fujiwara, ... Applied Physics Letters 100 (4), 042110, 2012 | 58 | 2012 |
| Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers NE Grant, FE Rougieux, D Macdonald, J Bullock, Y Wan Journal of Applied Physics 117 (5), 055711, 2015 | 54 | 2015 |
| Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ... physica status solidi (a) 213 (11), 2844-2849, 2016 | 50 | 2016 |
| Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon FE Rougieux, B Lim, J Schmidt, M Forster, D Macdonald, A Cuevas Journal of Applied Physics 110 (6), 063708, 2011 | 46 | 2011 |
| Accurate measurement of the formation rate of iron–boron pairs in silicon J Tan, D Macdonald, F Rougieux, A Cuevas Semiconductor Science and Technology 26 (5), 055019, 2011 | 37 | 2011 |
| Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon FE Rougieux, NE Grant, C Barugkin, D Macdonald, JD Murphy IEEE Journal of Photovoltaics 5 (2), 495-498, 2014 | 33 | 2014 |
| Micrometer-scale deep-level spectral photoluminescence from dislocations in multicrystalline silicon HT Nguyen, FE Rougieux, F Wang, H Tan, D Macdonald IEEE Journal of Photovoltaics 5 (3), 799-804, 2015 | 30 | 2015 |
| Reassessment of the recombination parameters of chromium in n-and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon C Sun, FE Rougieux, D Macdonald Journal of Applied Physics 115 (21), 214907, 2014 | 30 | 2014 |
| High efficiency UMG silicon solar cells: impact of compensation on cell parameters F Rougieux, C Samundsett, KC Fong, A Fell, P Zheng, D Macdonald, ... Progress in Photovoltaics: Research and Applications 24 (5), 725-734, 2016 | 28 | 2016 |
| Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells M Forster, P Wagner, J Degoulange, R Einhaus, G Galbiati, FE Rougieux, ... Solar Energy Materials and Solar Cells 120, 390-395, 2014 | 28 | 2014 |
| Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon M Forster, A Cuevas, E Fourmond, FE Rougieux, M Lemiti Journal of Applied Physics 111 (4), 043701, 2012 | 26 | 2012 |
| Upgraded metallurgical-grade silicon solar cells with efficiency above 20% P Zheng, FE Rougieux, C Samundsett, X Yang, Y Wan, J Degoulange, ... Applied Physics Letters 108 (12), 122103, 2016 | 24 | 2016 |
| Transport properties of p‐type compensated silicon at room temperature FE Rougieux, D Macdonald, A Cuevas Progress in Photovoltaics: Research and Applications 19 (7), 787-793, 2011 | 24 | 2011 |
| Recombination activity and impact of the boron–oxygen-related defect in compensated n-type silicon FE Rougieux, M Forster, D MacDonald, A Cuevas, B Lim, J Schmidt IEEE Journal of Photovoltaics 1 (1), 54-58, 2011 | 23 | 2011 |
Daniel MacdonaldProfessor, Engineering, The Australian National UniversityVerified email at anu.edu.au
