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Archana Tankasala
Archana Tankasala
Verified email at purdue.edu
Title
Cited by
Cited by
Year
Spatial metrology of dopants in silicon with exact lattice site precision
M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ...
Nature nanotechnology 11 (9), 763-768, 2016
632016
Highly tunable exchange in donor qubits in silicon
Y Wang, A Tankasala, LCL Hollenberg, G Klimeck, MY Simmons, ...
npj Quantum Information 2 (1), 1-5, 2016
522016
Valley interference and spin exchange at the atomic scale in silicon
B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, ...
Nature communications 11 (1), 6124, 2020
302020
Valley filtering in spatial maps of coupling between silicon donors and quantum dots
J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, MY Simmons, ...
Physical Review X 8 (3), 031049, 2018
242018
Two-electron states of a group-V donor in silicon from atomistic full configuration interactions
A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman, G Klimeck, ...
Physical Review B 97 (19), 195301, 2018
242018
Quantum-kit: simulating shor's factorization of 24-bit number on desktop
A Tankasala, H Ilatikhameneh
arXiv preprint arXiv:1908.07187, 2019
92019
Highly tunable exchange in donor qubits in silicon. npj Quantum Inf. 2
Y Wang, A Tankasala, LCL Hollenberg, G Klimeck, MY Simmons, ...
72016
Atomistic configuration interaction simulations of two-electron states of donors in silicon
A Tankasala, Y Wang, G Klimeck, R Rahman
APS March Meeting Abstracts 2015, A37. 011, 2015
72015
Shallow dopant pairs in silicon: An atomistic full configuration interaction study
A Tankasala, B Voisin, Z Kembrey, J Salfi, YL Hsueh, EN Osika, S Rogge, ...
Physical Review B 105 (15), 155158, 2022
52022
Phonon induced two-electron relaxation in two donor qubits in silicon
Y Hsueh, A Tankasala, Y Wang, G Klimeck, M Simmons, R Rahman
APS March Meeting Abstracts 2016, Y5. 008, 2016
42016
Valley population of donor states in highly strained silicon
B Voisin, KSH Ng, J Salfi, M Usman, JC Wong, A Tankasala, BC Johnson, ...
Materials for Quantum Technology 2 (2), 025002, 2022
32022
Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot
TA Ameen, H Ilatikhameneh, A Tankasala, Y Hsueh, J Charles, J Fonseca, ...
Beilstein Journal of Nanotechnology 9 (1), 1075-1084, 2018
32018
Engineering multi-electron interactions for quantum logic in silicon
A Tankasala
Purdue University, 2017
22017
Large exchange tunability with lateral electric fields in multi-donor silicon qubits
Y Wang, A Tankasala, LCL Hollenberg, G Klimeck, MY Simmons, ...
unpublished, 0
2
Multiscale-multiphysics modeling of nonpolar InGaN LEDs
MRK Nishat, A Tankasala, N Kharche, R Rahman, SS Ahmed
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 85-88, 2017
12017
Atomically precise control of a coupled donor-quantum dot system in silicon
J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, M Simmons, ...
APS March Meeting Abstracts 2017, R52. 004, 2017
12017
Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots
T Ameen, H Ilatikhameneh, Y Hsueh, J Charles, J Fonseca, M Povolotskyi, ...
arXiv preprint arXiv:1502.07726, 2015
12015
Nemo5, a parallel, multiscale, multiphysics nanoelectronics modeling tool
G Klimeck
2016
Atomistic Configuration Interaction Simulation Tool for Semiconductor Based Quantum Computing Devices
J Wu, A Tankasala, J Fonseca, R Rahman, G Klimeck
2016
Atomistic simulations of negatively charged donor states probed in STM experiments
A Tankasala, J Salfi, S Rogge, G Klimeck, R Rahman
APS March Meeting Abstracts 2016, P45. 007, 2016
2016
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Articles 1–20