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Firas Hatem
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Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network
Z Chai, P Freitas, W Zhang, F Hatem, JF Zhang, J Marsland, B Govoreanu, ...
IEEE Electron Device Letters, 2018
492018
Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors
Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ...
2019 Symposia on VLSI Technology and Circuits (VLSI), Kyoto, Japan., 2019
312019
Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme
F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ...
IEEE International Electron Device Meeting (IEDM), San Francisco, USA, Dec. 2019, 2019
302019
Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors
Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ...
IEEE Electron Device Letters, 2019
292019
Modeling of bipolar resistive switching of a nonlinear MISM memristor
FO Hatem, PWC Ho, TN Kumar, HAF Almurib
Semiconductor Science and Technology 30 (11), 115009, 2015
252015
A SPICE Model of the Ta2O5/TaOx Bi-Layered RRAM
FO Hatem, TN Kumar, HAF Almurib
IEEE International Symposium on Circuits & Systems, Baltimore, Maryland, USA, 2017
22*2017
A SPICE Model of the Ta2O5/TaOx Bi-Layered RRAM
FO Hatem, TN Kumar, HAF Almurib
IEEE Transactions on Circuits and Systems I: Regular Papers 63 (9), 1487-1498, 2016
22*2016
Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices
PWC Ho, FO Hatem, HAF Almurib, TN Kumar
Journal of Semiconductors 37 (6), 064001-1 - 064001-13, 2016
212016
Enhanced SPICE memristor model with dynamic ground
PWC Ho, FO Hatem, HAF Almurib, TN Kumar
2015 IEEE International Circuits and Systems Symposium (ICSyS), 130-132, 2015
212015
GeSe-based ovonic threshold switching volatile true random number generator
Z Chai, W Shao, W Zhang, J Brown, R Degraeve, FD Salim, S Clima, ...
IEEE Electron Device Letters 41 (2), 228-231, 2019
202019
The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique
Z Chai, W Zhang, P Freitas, F Hatem, JF Zhang, J Marsland, B Govoreanu, ...
IEEE Electron Device Letters, 2018
182018
Cycling induced metastable degradation in GeSe Ovonic threshold switching selector
Z Chai, W Zhang, S Clima, F Hatem, R Degraeve, Q Diao, JF Zhang, ...
IEEE Electron Device Letters 42 (10), 1448-1451, 2021
132021
Endurance improvement of more than five orders in Ge
F Hatem, JF Zhang, J Marsland, P Freitas, L Goux, GS Kar
IEDM Tech. Dig 35, 1-35.2, 2019
102019
Comparison on TiO2 and TaO2 based bipolar resistive switching devices
PWC Ho, FO Hatem, HAF Almurib, TN Kumar
2014 2nd International Conference on Electronic Design (ICED), 249-254, 2014
82014
Evidence of filamentary switching and relaxation mechanisms in Ge
Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang
Proc. Symp. VLSI Technol, T238-T239, 0
8
Compact SPICE modeling of STT-MTJ device
CJ Yee, FO Hatem, TN Kumar, HAF Almurib
2015 IEEE Student Conference on Research and Development (SCOReD), 625 - 628, 2015
42015
Stochastic computing based on volatile GeSe ovonic threshold switching selectors
Z Chai, P Freitas, WD Zhang, F Hatem, R Degraeve, S Clima, JF Zhang, ...
IEEE Electron Device Letters 41 (10), 1496-1499, 2020
32020
A low-area asynchronous router for clock-less network-on-chip on a FPGA
FO Hatem, TN Kumar
2013 IEEE Symposium on Computers & Informatics (ISCI), 152-158, 2013
32013
@ articleInfo {064001, title=" Comparison between Pt/TiO< sub> 2</sub>/Pt and Pt/TaO< sub>< i> X</i></sub>/TaO< sub>< i> Y</i></sub>/Pt based bipolar resistive switching …
PWC Ho, FO Hatem, HAF Almurib, TN Kumar
Journal of Semiconductors 37 (064001), 13, 2016
22016
Bipolar resistive switching of bi-layered Pt/Ta2O5/TaOx/Pt RRAM: physics-based modelling, circuit design and testing
FO Hatem
University of Nottingham, 2017
12017
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Articles 1–20