| The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN-and AlN-layers grown by molecular beam epitaxy on Si (1 1 1) MA Sanchez-Garcia, E Calleja, E Monroy, FJ Sanchez, F Calle, E Munoz, ... Journal of crystal growth 183 (1-2), 23-30, 1998 | 403 | 1998 |
| A study of low temperature crystallization of amorphous thin film indium–tin–oxide DC Paine, T Whitson, D Janiac, R Beresford, CO Yang, B Lewis Journal of Applied Physics 85 (12), 8445-8450, 1999 | 364 | 1999 |
| High-mobility amorphous In2O3–10wt% ZnO thin film transistors B Yaglioglu, HY Yeom, R Beresford, DC Paine Applied Physics Letters 89 (6), 2006 | 291 | 2006 |
| Interband tunneling in polytype GaSb/AlSb/InAs heterostructures LF Luo, R Beresford, WI Wang Applied physics letters 55 (19), 2023-2025, 1989 | 199 | 1989 |
| Photoconductive ultraviolet sensor using Mg‐doped GaN on Si (111) KS Stevens, M Kinniburgh, R Beresford Applied physics letters 66 (25), 3518-3520, 1995 | 192 | 1995 |
| Microstructure and photoluminescence of GaN grown on Si (111) by plasma‐assisted molecular beam epitaxy A Ohtani, KS Stevens, R Beresford Applied physics letters 65 (1), 61-63, 1994 | 174 | 1994 |
| Microstructure of AlN on Si (111) grown by plasma‐assisted molecular beam epitaxy KS Stevens, A Ohtani, M Kinniburgh, R Beresford Applied physics letters 65 (3), 321-323, 1994 | 121 | 1994 |
| Competition between tensile and compressive stress mechanisms during Volmer-Weber growth of aluminum nitride films BW Sheldon, A Rajamani, A Bhandari, E Chason, SK Hong, R Beresford Journal of Applied Physics 98 (4), 2005 | 101 | 2005 |
| Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures LF Luo, R Beresford, WI Wang Applied physics letters 53 (23), 2320-2322, 1988 | 99 | 1988 |
| Exciton and donor-acceptor recombination in undoped GaN on Si (111) F Calle, FJ Sanchez, JMG Tijero, MA Sanchez-Garcia, E Calleja, ... Semiconductor science and technology 12 (11), 1396, 1997 | 83 | 1997 |
| Demonstration of a silicon field‐effect transistor using AlN as the gate dielectric KS Stevens, M Kinniburgh, AF Schwartzman, A Ohtani, R Beresford Applied physics letters 66 (23), 3179-3181, 1995 | 82 | 1995 |
| Nanoheteroepitaxy of GaN on a nanopore array Si surface J Liang, SK Hong, N Kouklin, R Beresford, JM Xu Applied physics letters 83 (9), 1752-1754, 2003 | 76 | 2003 |
| Microfluidic chip-based nanoelectrode array as miniaturized biochemical sensing platform for prostate-specific antigen detection N Triroj, P Jaroenapibal, H Shi, JI Yeh, R Beresford Biosensors and Bioelectronics 26 (6), 2927-2933, 2011 | 75 | 2011 |
| Heterojunction field‐effect transistors based on AlGaSb/InAs LF Luo, R Beresford, WI Wang, H Munekata Applied physics letters 55 (8), 789-791, 1989 | 73 | 1989 |
| Characterization of metamorphic InxAl1− xAs∕ GaAs buffer layers using reciprocal space mapping D Lee, MS Park, Z Tang, H Luo, R Beresford, CR Wie Journal of applied physics 101 (6), 2007 | 67 | 2007 |
| A growth pathway for highly ordered quantum dot arrays J Liang, H Luo, R Beresford, J Xu Applied physics letters 85 (24), 5974-5976, 2004 | 64 | 2004 |
| Molecular‐beam epitaxial growth of metastable Ge1−xSnx alloys J Piao, R Beresford, T Licata, WI Wang, H Homma Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990 | 56 | 1990 |
| Resonant tunneling through X‐valley states in GaAs/AlAs/GaAs single‐barrier heterostructures R Beresford, LF Luo, WI Wang, EE Mendez Applied physics letters 55 (15), 1555-1557, 1989 | 55 | 1989 |
| Intrinsic compressive stress in polycrystalline films with negligible grain boundary diffusion BW Sheldon, A Ditkowski, R Beresford, E Chason, J Rankin Journal of applied physics 94 (2), 948-957, 2003 | 53 | 2003 |
| Negative differential resistance in AlGaSb/InAs single‐barrier heterostructures at room temperature R Beresford, LF Luo, WI Wang Applied physics letters 54 (19), 1899-1901, 1989 | 51 | 1989 |
Eric ChasonBrown UniversityVerified email at brown.edu
