Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties D Hiller, R Zierold, J Bachmann, M Alexe, Y Yang, JW Gerlach, ...
Journal of Applied Physics 107 (6), 2010
162 2010 Pb () centers at the Si-nanocrystal/SiO2 interface as the dominant photoluminescence quenching defect D Hiller, M Jivanescu, A Stesmans, M Zacharias
Journal of Applied Physics 107 (8), 2010
68 2010 Nitrogen at the D Hiller, S Goetze, F Munnik, M Jivanescu, JW Gerlach, J Vogt, E Pippel, ...
Physical Review B 82 (19), 195401, 2010
60 2010 Degradation of 248 nm deep UV photoresist by ion implantation D Tsvetanova, R Vos, G Vereecke, TN Parac-Vogt, F Clemente, ...
Journal of The Electrochemical Society 158 (8), H785, 2011
46 2011 Effect of heat-treatment on luminescence and structure of Ag nanoclusters doped oxyfluoride glasses and implication for fiber drawing AS Kuznetsov, NT Cuong, VK Tikhomirov, M Jivanescu, A Stesmans, ...
Optical Materials 34 (4), 616-621, 2012
38 2012 Inherent paramagnetic defects in layered Si/SiO2 superstructures with Si nanocrystals M Jivanescu, A Stesmans, M Zacharias
Journal of Applied Physics 104 (10), 2008
37 2008 Size dependence of Pb-type photoluminescence quenching defects at the Si nanocrystal interface M Jivanescu, D Hiller, M Zacharias, A Stesmans
Europhysics Letters 96 (2), 27003, 2011
26 2011 Electron spin resonance study of defects in low-κ oxide insulators (κ= 2.5–2.0) VV Afanas’ev, K Keunen, A Stesmans, M Jivanescu, Z Tőkei, ...
Microelectronic engineering 88 (7), 1503-1506, 2011
23 2011 Influence of the supramolecular organization on the magnetic properties of poly (3-alkylthiophene) s in their neutral state S Vandeleene, M Jivanescu, A Stesmans, J Cuppens, MJ Van Bael, ...
Macromolecules 44 (12), 4911-4919, 2011
19 2011 Correlation between interface traps and paramagnetic defects in c-Si/a-Si: H heterojunctions NH Thoan, M Jivanescu, BJ O’Sullivan, L Pantisano, I Gordon, ...
Applied Physics Letters 100 (14), 2012
17 2012 Magnetic properties of substituted poly (thiophene) s in their neutral state S Vandeleene, M Jivanescu, A Stesmans, J Cuppens, MJ Van Bael, ...
Macromolecules 43 (6), 2910-2915, 2010
17 2010 Multifrequency ESR analysis of the M Jivanescu, A Stesmans, VV Afanas’Ev
Physical Review B 83 (9), 094118, 2011
14 2011 Influence of in situ applied ultrasound during Si+ implantation in SiO2 on paramagnetic defect generation M Jivanescu, A Romanyuk, A Stesmans
Journal of Applied Physics 107 (11), 2010
11 2010 Comparing n-and p-type polycrystalline silicon absorbers in thin-film solar cells J Deckers, E Bourgeois, M Jivanescu, A Abass, D Van Gestel, ...
Thin Solid Films 579, 144-152, 2015
9 2015 Influence of the bulkiness of the substituent on the aggregation and magnetic properties of poly (3‐alkylthiophene) s H Peeters, M Jivanescu, A Stesmans, LMC Pereira, L Dillemans, ...
Journal of Polymer Science Part A: Polymer Chemistry 52 (1), 76-86, 2014
8 2014 Interface nature of oxidized single-crystal arrays of etched Si nanowires on (100) Si M Jivanescu, A Stesmans, R Kurstjens, F Dross
Applied Physics Letters 100 (8), 2012
8 2012 Ferromagnetic resonance measurements on Co nanowires A Popa, M Jivanescu, D Toloman, O Raita, LM Giurgiu
Journal of Physics: Conference Series 182 (1), 012073, 2009
8 2009 Multi-frequency ESR analysis of the E′ δ defect hyperfine structure in SiO2 glasses A Stesmans, M Jivanescu, VV Afanas' ev
Europhysics Letters 93 (1), 16002, 2011
5 2011 Atomic and electrical characterisation of amorphous silicon passivation layers BJ O'Sullivan, NH Thoan, M Jivanescu, L Pantisano, T Bearda, F Dross, ...
Energy Procedia 27, 185-190, 2012
4 2012 Functionality of thermally hydrogen-passivated interfaces of oxidized crystalline arrays of Si nanowires on (100) Si M Jivanescu, A Stesmans, R Kurstjens
Europhysics Letters 106 (6), 66003, 2014
3 2014 