Colin Humphreys
Cited by
Cited by
Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+ U study
SL Dudarev, GA Botton, SY Savrasov, CJ Humphreys, AP Sutton
Physical Review B 57 (3), 1505, 1998
Solid-state lighting
CJ Humphreys
MRS bulletin 33 (4), 459-470, 2008
Machine learning predicts laboratory earthquakes
B Rouet‐Leduc, C Hulbert, N Lubbers, K Barros, CJ Humphreys, ...
Geophysical Research Letters 44 (18), 9276-9282, 2017
Prospects of III-nitride optoelectronics grown on Si
D Zhu, DJ Wallis, CJ Humphreys
Reports on Progress in Physics 76 (10), 106501, 2013
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
Applied physics letters 83 (26), 5419-5421, 2003
The scattering of fast electrons by crystals
CJ Humphreys
Reports on Progress in Physics 42 (11), 1825, 1979
Absorption parameters in electron diffraction theory
PBH CJ Humphreys
Philosophical Magazine 18, 115-122, 1968
Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures
DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ...
Journal of applied physics 97 (10), 2005
Critical thickness calculations for InGaN/GaN
D Holec, P Costa, MJ Kappers, CJ Humphreys
Journal of Crystal Growth 303 (1), 314-317, 2007
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms
AJ Kenyon, CE Chryssou, CW Pitt, T Shimizu-Iwayama, DE Hole, ...
Journal of Applied Physics 91 (1), 367-374, 2002
Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
AN Bright, PJ Thomas, M Weyland, DM Tricker, CJ Humphreys, R Davies
Journal of Applied Physics 89 (6), 3143-3150, 2001
Carrier localization mechanisms in InGaN/GaN quantum wells
D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ...
Physical Review B—Condensed Matter and Materials Physics 83 (11), 115321, 2011
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides
S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram
Journal of applied physics 114 (13), 2013
Three-dimensional atom probe studies of an InxGa1− xN∕ GaN multiple quantum well structure: Assessment of possible indium clustering
MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, DJ Stokes, PH Clifton, ...
Applied physics letters 90 (6), 2007
Dislocation nucleation near the critical thickness in GeSi/Si strained layers
DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean
Philosophical Magazine A 59 (5), 1059-1073, 1989
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, ...
Applied Physics Letters 83 (4), 755-757, 2003
Chemical mapping and formation of V-defects in InGaN multiple quantum wells
N Sharma, P Thomas, D Tricker, C Humphreys
Applied Physics Letters 77 (9), 1274-1276, 2000
Understanding x-ray diffraction of nonpolar gallium nitride films
MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys
Journal of Applied Physics 105 (11), 2009
Dopant profiling with the scanning electron microscope—A study of Si
SL Elliott, RF Broom, CJ Humphreys
Journal of applied physics 91 (11), 9116-9122, 2002
A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons
Philosophical Magazine 26, 193-213, 1972
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