| A comparative study of different physics-based NBTI models S Mahapatra, N Goel, S Desai, S Gupta, B Jose, S Mukhopadhyay, ... IEEE transactions on electron devices 60 (3), 901-916, 2013 | 330 | 2013 |
| BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation N Parihar, N Goel, S Mukhopadhyay, S Mahapatra IEEE Transactions on Electron Devices 65 (2), 392-403, 2017 | 113 | 2017 |
| A consistent physical framework for N and P BTI in HKMG MOSFETs K Joshi, S Mukhopadhyay, N Goel, S Mahapatra 2012 IEEE international reliability physics symposium (IRPS), 5A. 3.1-5A. 3.10, 2012 | 106 | 2012 |
| HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation K Joshi, S Hung, S Mukhopadhyay, V Chaudhary, N Nanaware, ... 2013 IEEE international reliability physics symposium (IRPS), 4C. 2.1-4C. 2.10, 2013 | 64 | 2013 |
| A comprehensive AC/DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence S Desai, S Mukhopadhyay, N Goel, N Nanaware, B Jose, K Joshi, ... 2013 IEEE international reliability physics symposium (IRPS), XT. 2.1-XT. 2.11, 2013 | 58 | 2013 |
| A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs N Goel, K Joshi, S Mukhopadhyay, N Nanaware, S Mahapatra Microelectronics Reliability 54 (3), 491-519, 2014 | 49 | 2014 |
| Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs S Mukhopadhyay, K Joshi, V Chaudhary, N Goel, S De, RK Pandey, ... 2014 IEEE International Reliability Physics Symposium, GD. 3.1-GD. 3.11, 2014 | 41 | 2014 |
| Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics J Yang, M Masuduzzaman, K Joshi, S Mukhopadhyay, J Kang, ... 2012 IEEE international reliability physics symposium (IRPS), 5D. 4.1-5D. 4.7, 2012 | 41 | 2012 |
| Cold CMOS as a power-performance-reliability booster for advanced FinFETs HL Chiang, TC Chen, JF Wang, S Mukhopadhyay, WK Lee, CL Chen, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 37 | 2020 |
| Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs N Parihar, U Sharma, S Mukhopadhyay, N Goel, A Chaudhary, R Rao, ... 2017 IEEE International Reliability Physics Symposium (IRPS), XT-1.1-XT-1.11, 2017 | 35 | 2017 |
| A comparative study of NBTI and PBTI using different experimental techniques S Mukhopadhyay, N Goel, S Mahapatra IEEE Transactions on Electron Devices 63 (10), 4038-4045, 2016 | 33 | 2016 |
| A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs N Goel, S Mukhopadhyay, N Nanaware, S De, RK Pandey, K Murali, ... 2014 IEEE International Reliability Physics Symposium, 6A. 4.1-6A. 4.12, 2014 | 31 | 2014 |
| A Reliability Enhanced 5nm CMOS Technology Featuring 5th Generation FinFET with Fully-Developed EUV and High Mobility Channel for Mobile SoC and High … JC Liu, S Mukhopadhyay, A Kundu, SH Chen, HC Wang, DS Huang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 9.2. 1-9.2. 4, 2020 | 29 | 2020 |
| Characterization methods for BTI degradation and associated gate insulator defects S Mahapatra, N Goel, A Chaudhary, K Joshi, S Mukhopadhyay Fundamentals of Bias Temperature Instability in MOS Transistors …, 2016 | 29 | 2016 |
| Understanding process impact of hole traps and NBTI in HKMG p-MOSFETs using measurements and atomistic simulations S Mahapatra, S De, K Joshi, S Mukhopadhyay, RK Pandey, K Murali IEEE electron device letters 34 (8), 963-965, 2013 | 26 | 2013 |
| An experimental perspective of trap generation under BTI stress S Mukhopadhyay, S Mahapatra IEEE Transactions on Electron Devices 62 (7), 2092-2097, 2015 | 23 | 2015 |
| A detailed study of gate insulator process dependence of NBTI using a compact model K Joshi, S Mukhopadhyay, N Goel, N Nanware, S Mahapatra IEEE Transactions on Electron Devices 61 (2), 408-415, 2014 | 21 | 2014 |
| Time-zero-variability and BTI impact on advanced FinFET device and circuit reliability S Mukhopadhyay, YH Lee, JH Lee Microelectronics Reliability 81, 226-231, 2018 | 19 | 2018 |
| NBTI in replacement metal gate SiGe core FinFETs: Impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneals J Franco, B Kaczer, A Chasin, H Mertens, LÅ Ragnarsson, R Ritzenthaler, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 4B-2-1-4B-2-7, 2016 | 19 | 2016 |
| Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs J Franco, B Kaczer, S Mukhopadhyay, P Duhan, P Weckx, PJ Roussel, ... 2016 IEEE International Electron Devices Meeting (IEDM), 15.3. 1-15.3. 4, 2016 | 14 | 2016 |
Souvik MahapatraProfessor, EE Dept, IIT Bombay (Fellow of IEEE, INSA, IASc, INAE)Verified email at ee.iitb.ac.in
