| Achieving direct band gap in germanium through integration of Sn alloying and external strain S Gupta, B Magyari-Köpe, Y Nishi, KC Saraswat Journal of Applied Physics 113 (7), 073707, 2013 | 349 | 2013 |
| Lattice instabilities in metallic elements G Grimvall, B Magyari-Köpe, V Ozoliņš, KA Persson Reviews of Modern Physics 84 (2), 945, 2012 | 327 | 2012 |
| Electronic correlation effects in reduced rutile TiO 2 within the LDA+ U method SG Park, B Magyari-Köpe, Y Nishi Physical Review B 82 (11), 115109, 2010 | 186 | 2010 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 184 | 2019 |
| IEEE International Electron Devices Meeting (IEDM) L Wei, K Jiahao, C Wei, D Sarkar, Y Khatami, D Jena, K Banerjee Washington DC, 2013 | 155 | 2013 |
| Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in for Resistive Switching Memory SG Park, B Magyari-Köpe, Y Nishi IEEE Electron Device Letters 32 (2), 197-199, 2010 | 142 | 2010 |
| Model of metallic filament formation and rupture in NiO for unipolar switching HD Lee, B Magyari-Köpe, Y Nishi Physical Review B 81 (19), 193202, 2010 | 124 | 2010 |
| GeSn technology: Extending the Ge electronics roadmap S Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ... 2011 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2011 | 117 | 2011 |
| ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels K Kamiya, M Young Yang, SG Park, B Magyari-Köpe, Y Nishi, M Niwa, ... Applied Physics Letters 100 (7), 073502, 2012 | 101 | 2012 |
| HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides MJ Mleczko, C Zhang, HR Lee, HH Kuo, B Magyari-Köpe, RG Moore, ... Science advances 3 (8), e1700481, 2017 | 96 | 2017 |
| First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides B Magyari-Köpe, SG Park, HD Lee, Y Nishi Journal of Materials Science 47 (21), 7498-7514, 2012 | 90 | 2012 |
| Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0. 7Ca0. 3MnO3 B Magyari-Köpe, M Tendulkar, SG Park, HD Lee, Y Nishi Nanotechnology 22 (25), 254029, 2011 | 90 | 2011 |
| Low-temperature crystal structure of perovskite: An ab initio total energy study B Magyari-Köpe, L Vitos, G Grimvall, B Johansson, J Kollar Physical Review B 65 (19), 193107, 2002 | 79 | 2002 |
| Theoretical prediction of low-energy crystal structures and hydrogen storage energetics in Li 2 N H B Magyari-Köpe, V Ozoliņš, C Wolverton Physical Review B 73 (22), 220101, 2006 | 75 | 2006 |
| Nanoscale (∼10nm) 3D vertical ReRAM and NbO2threshold selector with TiN electrode E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ... 2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013 | 73 | 2013 |
| Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability X Zhang, J Li, M Grubbs, M Deal, B Magyari-Köpe, BM Clemens, Y Nishi 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 73* | 2009 |
| Self-diffusion rates in Al from combined first-principles and model-potential calculations N Sandberg, B Magyari-Köpe, TR Mattsson Physical review letters 89 (6), 065901, 2002 | 66 | 2002 |
| Advances in non-volatile memory and storage technology Y Nishi, B Magyari-Kope Woodhead Publishing, 2019 | 62 | 2019 |
| Elastic anomalies in Ag-Zn alloys B Magyari-Köpe, G Grimvall, L Vitos Physical Review B 66 (6), 064210, 2002 | 61 | 2002 |
| Double-copy constructions and unitarity cuts Z Bern, S Davies, J Nohle Physical Review D 93 (10), 105015, 2016 | 58* | 2016 |
