Blanka Magyari-Kope
Blanka Magyari-Kope
Electrical Engineering, Stanford University
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Cited by
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Achieving direct band gap in germanium through integration of Sn alloying and external strain
S Gupta, B Magyari-Köpe, Y Nishi, KC Saraswat
Journal of Applied Physics 113 (7), 073707, 2013
Lattice instabilities in metallic elements
G Grimvall, B Magyari-Köpe, V Ozoliņš, KA Persson
Reviews of Modern Physics 84 (2), 945, 2012
Electronic correlation effects in reduced rutile TiO 2 within the LDA+ U method
SG Park, B Magyari-Köpe, Y Nishi
Physical Review B 82 (11), 115109, 2010
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
IEEE International Electron Devices Meeting (IEDM)
L Wei, K Jiahao, C Wei, D Sarkar, Y Khatami, D Jena, K Banerjee
Washington DC, 2013
Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in for Resistive Switching Memory
SG Park, B Magyari-Köpe, Y Nishi
IEEE Electron Device Letters 32 (2), 197-199, 2010
Model of metallic filament formation and rupture in NiO for unipolar switching
HD Lee, B Magyari-Köpe, Y Nishi
Physical Review B 81 (19), 193202, 2010
GeSn technology: Extending the Ge electronics roadmap
S Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ...
2011 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2011
ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels
K Kamiya, M Young Yang, SG Park, B Magyari-Köpe, Y Nishi, M Niwa, ...
Applied Physics Letters 100 (7), 073502, 2012
HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides
MJ Mleczko, C Zhang, HR Lee, HH Kuo, B Magyari-Köpe, RG Moore, ...
Science advances 3 (8), e1700481, 2017
First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides
B Magyari-Köpe, SG Park, HD Lee, Y Nishi
Journal of Materials Science 47 (21), 7498-7514, 2012
Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0. 7Ca0. 3MnO3
B Magyari-Köpe, M Tendulkar, SG Park, HD Lee, Y Nishi
Nanotechnology 22 (25), 254029, 2011
Low-temperature crystal structure of perovskite: An ab initio total energy study
B Magyari-Köpe, L Vitos, G Grimvall, B Johansson, J Kollar
Physical Review B 65 (19), 193107, 2002
Theoretical prediction of low-energy crystal structures and hydrogen storage energetics in Li 2 N H
B Magyari-Köpe, V Ozoliņš, C Wolverton
Physical Review B 73 (22), 220101, 2006
Nanoscale (∼10nm) 3D vertical ReRAM and NbO2threshold selector with TiN electrode
E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ...
2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013
Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability
X Zhang, J Li, M Grubbs, M Deal, B Magyari-Köpe, BM Clemens, Y Nishi
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Self-diffusion rates in Al from combined first-principles and model-potential calculations
N Sandberg, B Magyari-Köpe, TR Mattsson
Physical review letters 89 (6), 065901, 2002
Advances in non-volatile memory and storage technology
Y Nishi, B Magyari-Kope
Woodhead Publishing, 2019
Elastic anomalies in Ag-Zn alloys
B Magyari-Köpe, G Grimvall, L Vitos
Physical Review B 66 (6), 064210, 2002
Double-copy constructions and unitarity cuts
Z Bern, S Davies, J Nohle
Physical Review D 93 (10), 105015, 2016
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