Shahab Mollah, PhD
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Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2Gate-Insulator and Zr-Based Ohmic Contacts
X Hu, S Hwang, K Hussain, R Floyd, S Mollah, F Asif, G Simin, A Khan
IEEE Electron Device Letters 39 (10), 1568-1571, 2018
Modeling and performance analysis of a hybrid power system
NC Saha, S Acharjee, MAS Mollah, KT Rahman, FHM Rafi, MJA Rabin, ...
2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013
Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm
H Xue, K Hussain, T Razzak, M Gaevski, SH Sohel, S Mollah, V Talesara, ...
IEEE Electron Device Letters 41 (5), 677-680, 2020
Sensitivity learning oriented nonmonotonic multi reservoir echo state network for short-term load forecasting
MJA Rabin, MS Hossain, MS Ahsan, MAS Mollah, MT Rahman
2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013
An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays
R Floyd, M Gaevski, MD Alam, S Islam, K Hussain, A Mamun, S Mollah, ...
Applied Physics Express 14 (1), 014002, 2020
Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm− 1
M Gaevski, S Mollah, K Hussain, J Letton, A Mamun, MU Jewel, ...
Applied Physics Express 13 (9), 094002, 2020
High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1− x N channel MOSHFET with drain current 0.48 A mm− 1 and threshold voltage+ 3.6 V
S Mollah, K Hussain, A Mamun, M Gaevski, G Simin, ...
Applied Physics Express 14 (1), 014003, 2021
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric
S Mollah, M Gaevski, MVS Chandrashekhar, X Hu, V Wheeler, K Hussain, ...
Semiconductor Science and Technology 34 (12), 125001, 2019
Current collapse in high-Al channel AlGaN HFETs
S Mollah, M Gaevski, K Hussain, A Mamun, R Floyd, X Hu, ...
Applied Physics Express 12 (7), 074001, 2019
High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer …
S Mollah, K Hussain, R Floyd, A Mamun, M Gaevski, ...
physica status solidi (a) 217 (7), 1900802, 2020
Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders
MD Alam, M Gaevski, MU Jewel, S Mollah, A Mamun, K Hussain, R Floyd, ...
Applied Physics Letters 119 (13), 2021
High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V
H Xue, K Hussain, V Talesara, T Razzak, M Gaevski, S Mollah, S Rajan, ...
physica status solidi (RRL)–Rapid Research Letters 15 (6), 2000576, 2021
Thermoreflectance Imaging of (Ultra)wide Band-Gap Devices with MoS2 Enhancement Coatings
R Hanus, SV Rangnekar, S Mollah, K Hussain, N Hines, E Heller, ...
ACS Applied Materials & Interfaces 13 (35), 42195-42204, 2021
Trap characterization in ultra-wide bandgap Al0. 65Ga0. 4N/Al0. 4Ga0. 6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence
MU Jewel, MD Alam, S Mollah, K Hussain, V Wheeler, C Eddy, M Gaevski, ...
Applied Physics Letters 115 (21), 2019
Load frequency control analysis using AGC, TCPS and SMES
FHM Rafi, MZ Ansary, MH Rahman, MAS Mollah, MA Rahman, AF Mitul
2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013
Classification of real time moving object using echo state network
AF Mitul, MJA Rabin, M Rakeeb, AAM Khan, GMSM Rana, AS Mollah, ...
2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013
Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs
S Mollah, M Gaevski, K Hussain, A Mamun, MVS Chandrashekhar, ...
Applied Physics Letters 117 (23), 2020
An Introduction and Prospect of Geothermal(Qergy in power Sector of Bangladesh
MF Nayan, S Mahmud, MA shahab Mollah, S Ahmed, MM Hasan
International Journal of Scientific & Engineering Research 5 (1), 2014
Threshold voltage control with high-temperature gate-oxide annealing in ultrawide bandgap AlGaN-channel MOSHFETs
S Mollah, K Hussain, A Mamun, MD Alam, MVS Chandrashekhar, G Simin, ...
Applied Physics Express 15 (10), 104001, 2022
Transition metal dichalcogenide semiconductor growth and large area devices for optoelectronics and sensing
S Garg, AS Mollah, JL Waters, SM Kim, P Kung
ECS Transactions 80 (6), 1, 2017
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