Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2Gate-Insulator and Zr-Based Ohmic Contacts X Hu, S Hwang, K Hussain, R Floyd, S Mollah, F Asif, G Simin, A Khan IEEE Electron Device Letters 39 (10), 1568-1571, 2018 | 41 | 2018 |
Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm H Xue, K Hussain, T Razzak, M Gaevski, SH Sohel, S Mollah, V Talesara, ... IEEE Electron Device Letters 41 (5), 677-680, 2020 | 32 | 2020 |
Modeling and performance analysis of a hybrid power system NC Saha, S Acharjee, MAS Mollah, KT Rahman, FHM Rafi, MJA Rabin, ... 2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013 | 31 | 2013 |
Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm− 1 M Gaevski, S Mollah, K Hussain, J Letton, A Mamun, MU Jewel, ... Applied Physics Express 13 (9), 094002, 2020 | 25 | 2020 |
Sensitivity learning oriented nonmonotonic multi reservoir echo state network for short-term load forecasting MJA Rabin, MS Hossain, MS Ahsan, MAS Mollah, MT Rahman 2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013 | 22 | 2013 |
An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays R Floyd, M Gaevski, MD Alam, S Islam, K Hussain, A Mamun, S Mollah, ... Applied Physics Express 14 (1), 014002, 2020 | 17 | 2020 |
High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1− x N channel MOSHFET with drain current 0.48 A mm− 1 and threshold voltage+ 3.6 V S Mollah, K Hussain, A Mamun, M Gaevski, G Simin, ... Applied Physics Express 14 (1), 014003, 2021 | 15 | 2021 |
Current collapse in high-Al channel AlGaN HFETs S Mollah, M Gaevski, K Hussain, A Mamun, R Floyd, X Hu, ... Applied Physics Express 12 (7), 074001, 2019 | 15 | 2019 |
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric S Mollah, M Gaevski, MVS Chandrashekhar, X Hu, V Wheeler, K Hussain, ... Semiconductor Science and Technology 34 (12), 125001, 2019 | 14 | 2019 |
High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V H Xue, K Hussain, V Talesara, T Razzak, M Gaevski, S Mollah, S Rajan, ... physica status solidi (RRL)–Rapid Research Letters 15 (6), 2000576, 2021 | 11 | 2021 |
High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer … S Mollah, K Hussain, R Floyd, A Mamun, M Gaevski, ... physica status solidi (a) 217 (7), 1900802, 2020 | 11 | 2020 |
Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders MD Alam, M Gaevski, MU Jewel, S Mollah, A Mamun, K Hussain, R Floyd, ... Applied Physics Letters 119 (13), 2021 | 9 | 2021 |
Thermoreflectance Imaging of (Ultra)wide Band-Gap Devices with MoS2 Enhancement Coatings R Hanus, SV Rangnekar, S Mollah, K Hussain, N Hines, E Heller, ... ACS Applied Materials & Interfaces 13 (35), 42195-42204, 2021 | 8 | 2021 |
Load frequency control analysis using AGC, TCPS and SMES FHM Rafi, MZ Ansary, MH Rahman, MAS Mollah, MA Rahman, AF Mitul 2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013 | 8 | 2013 |
Trap characterization in ultra-wide bandgap Al0. 65Ga0. 4N/Al0. 4Ga0. 6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence MU Jewel, MD Alam, S Mollah, K Hussain, V Wheeler, C Eddy, M Gaevski, ... Applied Physics Letters 115 (21), 2019 | 7 | 2019 |
Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs S Mollah, M Gaevski, K Hussain, A Mamun, MVS Chandrashekhar, ... Applied Physics Letters 117 (23), 2020 | 6 | 2020 |
Classification of real time moving object using echo state network AF Mitul, MJA Rabin, M Rakeeb, AAM Khan, GMSM Rana, AS Mollah, ... 2013 International Conference on Informatics, Electronics and Vision (ICIEV …, 2013 | 6 | 2013 |
An Introduction and Prospect of Geothermal(Qergy in power Sector of Bangladesh MF Nayan, S Mahmud, MA shahab Mollah, S Ahmed, MM Hasan International Journal of Scientific & Engineering Research 5 (1), 2014 | 5 | 2014 |
Threshold voltage control with high-temperature gate-oxide annealing in ultrawide bandgap AlGaN-channel MOSHFETs S Mollah, K Hussain, A Mamun, MD Alam, MVS Chandrashekhar, G Simin, ... Applied Physics Express 15 (10), 104001, 2022 | 4 | 2022 |
Transition metal dichalcogenide semiconductor growth and large area devices for optoelectronics and sensing S Garg, AS Mollah, JL Waters, SM Kim, P Kung ECS Transactions 80 (6), 1, 2017 | 4 | 2017 |